Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with its varied application in solar cells as a transparent front contact, intermediate reflector, back reflector layer and even tunnel layer for passivating contacts, owing to easy tailoring of its optical properties. In this work, we systematically investigate the influence of gas mixture (SiH4, CO2, PH3 and H2), RF power and process pressure on the optical, structural and passivation properties of thin n-type nc-SiOx:H films prepared in an industrial, high throughput, plasma-enhanced chemical vapor deposition (PECVD) reactor. We provide a detailed description of the n-type nc-SiOx:H material develop-ment using various characterization techniques (SEM, EDX, Raman spectroscopy, and spectro-scopic ellipsometry) with a focus on the relationship between the material properties and the pas-sivation they provide to n-type c-Si wafers characterized by their effective carrier lifetime (τeff). Further, we also outline the parameters to be kept in mind while developing different n-type nc-SiOx:H layers for different solar cell applications. We report a tunable optical gap (1.8 – 2.3 eV) for our n-type nc-SiOx:H films as well as excellent passivation properties with τeff up to 3.5 ms (iVoc ~ 715 mV) before annealing. Oxygen content plays an important role in determining the crystallinity and hence passivation quality of the deposited nanocrystalline silicon oxide films.

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

ZnO thin films with a thickness of 300 nm were deposited on Si and Al2O3 substrates using electron beam evaporation technique with the aim to be tested as low cost and low power consumption gas sensors for ozone (O3). To characterize the surface roughness and the grain size, which are the main parameters recognized to enhance gas sensitivity since they directly influence the effective sensing area, surface morphology and roughness analyses of the films were performed using scanning electron microscopy and atomic force microscopy, respectively. The crystalline structure and elemental composition were studied through Raman spectroscopy and X-ray photoelectron spectroscopy. Gas tests were conducted at room temperature and zero-bias voltage to assess the sensitivity and response as a function of time of the films to O3 pollutant. The results indicate that the films deposited on Al2O3 exhibit promising characteristics, such as high sensitivity and a very short response time (< 2 s) to the gas concentration. Additionally, it was observed that the films display pronounced degradation effects after a significant exposure to O3.

Here we report the effect of substrate, sonication process, and post-annealing on the structural, morphological, and optical properties of ZnO thin films grown in the presence of isopropyl alcohol (IPA) at temperature 30 – 65 ℃ by successive ionic layer adsorption and reaction (SILAR) method on both soda lime glass (SLG) and Cu foil. The X-ray diffraction (XRD) patterns confirmed the preferential growth thin films along (002) and (101) plane of wurtzite ZnO structure while grown on SLG and Cu foil substrate respectively. Both XRD and Raman spectra confirmed the ZnO and Cu-oxide phases of the deposited films. Scanning electron microscope (SEM) image of the deposited films shows compact and uniformly distributed grains for samples grown without sonication while using IPA at temperature 50 and 65 ℃. The post-annealing treatment improves the crystallinity of the films, further evident by XRD and transmission and reflection results. The estimated optical bandgaps are in the range of 3.37-3.48 eV for as-grown samples. Results revealed that high-quality ZnO thin films could be grown without sonication using IPA dispersant at 50 ℃, which is much lower than the reported results using the SILAR method. This study suggests that in the presence of IPA, the SLG substrate results in better c-axis oriented ZnO thin films than that of DI water, ethylene glycol, propylene glycol at the optimum temperature of 50 ℃. Air-annealing of the samples grown on Cu foils induced the formation of Cu_xO/ZnO junctions which is evident from the characteristic I-V curve including the structural and optical data.

ZnO films with Ti atoms incorporated (TZO) in a wide range (0-18 at. %) have been grown by reactive co-sputtering on silicon and glass substrates. The influence of the titanium incorporation in the ZnO matrix on the structural and optical characteristics of the samples has been determined by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The results indicate that the samples with low Ti content (< 4 at. %) exhibit the wurtzite-like structure, with the Ti+4 ions substitutionally incorporated into the ZnO structure, forming Ti-doped ZnO films. In particular, very low concentration of Ti (<0.9 at. %) leads to a significant increase of the crystallinity of the TZO samples. Higher Ti contents give rise to a progressive amorphization of the wurtzite-like structure so samples with high Ti content (≥18at. %), displays an amorphous structure indicating the XPS analysis a predominance of Ti-O-Zn mixed oxides. The energy gap, obtained from absorption spectrophotometry, increases from 3.2 eV for pure ZnO films to 3.6 eV for those with the highest Ti content. Ti incorporation in the ZnO samples below 0.9 at. % rises both, the blue (380 nm) and green (550 nm) bands of the photoluminescence (PL) emission, thereby indicating a significant improvement of PL efficiency of the samples.

The surface behavior of the ZnO-based films could be modulated via a postannealing and ultraviolet (UV) irradiation with different powers and time, respectively. These present results could provide modulate the microstructure related in grain-size distribution and photocatalytic behavior for potential guide in the field of wide bandgap semiconducting oxides. The ZnO films were prepared onto Corning-1737 glass substrates by using radio-frequency magnetron sputtering without supplying oxygen source at room temperature. For the purpose of obtaining modulable grain microstructures, the as-prepared ZnO films (Z0) were treated via a postannealing modification in vacuum furnace at 300°C for 30 minutes after deposition (Z300) accompanied with the adjustable internal stress. The contact angle (CA) value of ZnO film reduced from 95° to 68° was owning to the different grain microstructure accompanied by a change in size variation. In addition, the UV light with different irradiation powers could also be used to improve the hydrophilicity varied from hydrophobic status to superhydrophilic status due to the desirable surface characteristics of the photocatalytic action. In addition, the photocatalytic activity of ZnO film exhibited efficient photodegradation of methylene blue (MB) under UV irradiation, with a chemical reaction constant of 2.93×10-3 min−1. In this present work, we demonstrated that the CA value of the ZnO films not only caused from hydrophobic to hydrophilic status accompanied by a change in grain size combined with internal stress but also induced by the UV light irradiation combined with photocatalytic activity simultaneously. On the other hand, the enhanced surface plasmonic resonance could be observed that is due to couple electron and photon oscillations and can be generated at the interface between a flat, continuous Pt capping nanolayer. This designed structure could also be considered as a Pt electrode pattern onto ZnO (metal Pt/ ceramic ZnO) for multifunctional heterostructured sensors and devices in near future.

In this contribution we present work on rapid thermal annealing of as-electrodeposited thin films of Cu2ZnSnS4. The treatment was carried out in cold wall tubular reactor in dynamic conditions with variations of temperature, speed and time of the specific elements of the process. The effect of annealing was investigated by X-ray diffractometry, Raman scattering and Scanning Electron Microscopy (SEM). The phase composition of the films in dependence on conditions of treatment was analysed and have been shown that in slow and prolonged high-temperature process the low temperature binaries react completely and only Kesterite and ZnS is left. In addition, structural investigations by XRD have shown gradual decrease of crystallite sizes when the temperature level and duration of the high-temperature segment increases and respectively increase in the strain, due to formation of the phases in non-equilibrium conditions. In opposite, when the speed of dynamic segments in the process decreases the both crystallite size and strain of the Kesterite decreases non-monotonically. The grain sizes of Kesterite, presented by SEM investigations, have shown increase when the temperature and the duration increase, respectively the speed decreases with exemption at higher temperature near 750 C. The set of experiments gave idea by scrupulous analysis of Raman data to elucidate the track for fine manipulating of the defects in the structure of CZTS thin films having in mind the dependences of the ratios of Q = I287/I303 and Q’= I338/(I366+I374) on the process variables.

As a derivative of graphene, graphene oxide (GO) was initially developed by chemists to emulate some of the key properties of graphene, but it was soon recognized as a unique material in its own right, addressing an application space that is not accessible to chemical vapor deposition based materials. Over the past decade, GO has emerged as a new frontier material with tremendous advances in its material fabrication and quality control over its properties. These in turn have led to rapid progress in GO based photonics, electronics, and optoelectronics concepts and devices, evoking new science and paving the way for many technological breakthroughs with exceptional performance. Here, we review the unique fundamental characteristics of GO, its thin film fabrication methods, patterning techniques, and mechanisms for tuning its material properties. This latter capability in particular has enabled novel advanced functional photonic, electronic, and optoelectronic devices. Understanding these insights is essential for designing and tailoring GO properties for state-of-the-art applications including solar energy harvesting, energy storage, medical diagnosis, image displays, and optical communications. We conclude by discussing the open challenges and exciting opportunities of this field, together with future prospects for major technological advancements and breakthroughs.

Infrared sensors incorporating suspended zinc oxide (ZnO) pyroelectric films and thermally-insulated silicon substrates are fabricated using conventional MEMS-based thin-film deposition, photolithography, and etching techniques. The responsivity of the pyroelectric film is improved through annealing at 500℃ for 4 h. The voltage response of the fabricated sensors is evaluated experimentally for a substrate thickness of 1 µm over a sensing range of 30 cm. The results show that the voltage signal varies as an inverse exponential function of the distance. A positioning system based on three infrared sensors is implemented in LabVIEW. It is shown that the position estimates obtained using the proposed system are in excellent agreement with the actual locations. In general, the results presented in this study provide a useful source of reference for the further development of MEMS-based pyroelectric infrared sensors.

New advances in creating effective and affordable copper-based catalysts for water splitting represent a promising strategy for driving sustainable energy technologies. However, ma- terials containing copper are susceptible to corrosion and agglomeration. In this study, we describe a synthesis route to produce olamine-functionalized CuO nanoparticles using the Hot Injection method. Nanoparticles were obtained and subsequently deposited on FTO substrates, undergoing thermal treatment at 500°C and 600°C in atmospheres containing O2 and N2, aiming to enhance the adhesion of the active material to the substrate and modify its oxidation state. Microstructural properties were analyzed using XRD, SEM, and TEM, while electrochemical properties were studied using CV, LSV, and EIS. Electrodes treated thermally in an N2 atmosphere at 600°C exhibited higher ESCA, indicating a greater area of active sites exposed to surface reactions and, therefore, superior catalytic activity in Hy- drogen Evolution Reaction (HER). These findings show an interesting strategy for avoiding rapid electron-hole recombination and, consequently, CuO corrosion. For Oxygen Evolution Reaction (OER), samples treated thermally in O2 atmosphere at 500°C and 600°C appear to be more effective.

Integrated photonic devices operating via optical nonlinearities offer a powerful solution for all-optical information processing, yielding processing speeds that are well beyond that of electronic processing as well as providing the added benefits of compact footprint, high stability, high scalability, and small power consumption. The increasing demand for high-performance nonlinear integrated photonic devices has facilitated the hybrid integration of novel materials to address the limitations of existing integrated photonic platforms, such as strong nonlinear optical absorption or an inadequate optical nonlinearity. Recently, graphene oxide (GO), with its large optical nonlinearity, high flexibility in altering its properties, and facile fabrication processes, has attracted significant attention, enabling many hybrid nonlinear integrated photonic devices with improved performance and novel capabilities. This paper reviews the applications of GO to nonlinear integrated photonics. First, an overview of GO’s optical properties and the fabrication technologies needed for its on-chip integration is provided. Next, the state-of-the-art GO nonlinear integrated photonic devices are reviewed, together with comparisons of the nonlinear optical performance of different integrated platforms incorporating GO. Finally, the challenges and perspectives of this field are discussed.

In this study, a flexible strain sensor is devised using corrugated poly(3-hexylthiophene) (P3HT) thin film. In the previous studies, the P3HT-based photoactive thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to relatively more brittle thin film constituent—poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS) conductive thin film as a bottom electrode. To address this issue, it is aimed to design mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to optimize design of the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS thin film affect the optical and electrical properties. Also, pre-strain effect on light absorptivity of the corrugated P3HT-based thin films was studied. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and DC voltage strain sensing capability was validated. As a result, flexible strain sensor exhibited tensile strain sensing range up to 5% at frequency up to 15 Hz with maximum gage factor ~7.

Highly macroporous thin films of WO₃ were fabricated on transparent conductive substrates by application of a polymeric organic paste loaded with an amine/tungstate complex. After spin-coating and annealing at 550^oC, the resulting yellow films are found to be comprised of channeled array of clustered nanoparticles. These channels are confirmed by scanning electron microscopy to extend through the entire length of the coating. The high porosity of the material enables the insertion of a co-catalyst into the internal structure of the film. These internally functionalized composites demonstrate good photosensitivity and stability in neutral electrolyte.

High-density polyethylene (HDPE) waste poses a significant environmental challenge due to its non-biodegradable nature and the vast quantities generated annually. However, conventional recycling methods are energy-intensive and often yield low-quality products. Herein, HDPE waste is upcycled into anti-aging superhydrophobic thin films suitable for outdoor applications. A two-layer spin-casting method combined with heating-induced crosslinking is utilized to produce an exceptionally rough superhydrophobic surface, featuring a root mean square (RMS) roughness of 50 nm, an average crest height of 222 nm, an average trough depth of –264 nm, and a contact angle (CA) of 148°. To assess durability, weathering tests were conducted, revealing the films' susceptibility to degradation under harsh conditions. The films' resistance to environmental factors is improved by incorporating a UV absorber, maintaining their hydrophobic properties and mechanical strength. Our research demonstrates a sustainable method for upcycling waste into high-performance, weather-resistant superhydrophobic films.

We present organic, diamagnetic materials based on structurally simple (hetero-) tolane derivatives. They form crystalline thin-film aggregates that are suitable for Faraday rotation (FR) spectroscopy. The resulting new materials are characterized appropriately by common spectroscopic (NMR, UV-Vis), microscopy (POM), and XRD techniques. The spectroscopic studies give extremely high FR activities thus makes these materials promising candidates for future practical applications. Other than a proper explanation, we insist in the complexity of designing efficient FR materials starting off from single molecules.

Density functional theory (DFT) calculations of hydrogen adsorption on titanium nitride had previously shown that hydrogen may adsorb on both titanium and nitrogen sites with a moderate adsorption energy. Further, the diffusion barrier was also found to be low. These findings may qualify TiN, a versatile multifunctional material with electronic conductivity, as electrode material for the hydrogen evolution reaction (HER). This was the main impetus of this work which aims to experimentally and theoretically investigate the electrocatalytic properties of TiN-layers that were processed on Ti substrate using reactive ion sputtering. The properties are discussed focusing on the role of oxygen defects introduced during the sputtering process on the HER. Based on DFT calculations, it is shown that these oxygen defects alter the electronic environment of the Ti atoms which entails a low hydrogen adsorption energy in the range of -0.1 eV; this leads to HER performances that match those of Pt-NPs in acidic media. When a few nanometr thick layer of Pd-NPs is sputtered on-top of the TiN-layer, the performance is drastically reduced. This is interpreted in terms of oxygen defects being scavenged by the Pd-NPs near the surface which is thought to reduce the hydrogen adsorption sites.

Hafnium is a metal with rare properties, such as a low superconducting transition temperature slightly above 100 mK, which makes it attractive for a lot of applications, especially for design and fabrication of microcalorimeters with high energy resolution. In this paper we describe the results of fabrication and experimental investigation of superconducting properties of hafnium thin films in a dilution refrigerator. The considered Hf films, whose thickness is in the range from 60 to 115 nm, are deposited on substrates by electron beam evaporation. The combinations with thin layers of normal metals to decrease the critical temperature of superconducting hafnium films by proximity effect, are also considered. The critical temperature of the studied films varies from 56 to 302 mK. Also, significant increase of the critical temperature of some films over time was observed and investigated.

Tantalum oxide thin films are deposited by DC reactive magnetron sputtering from a tantalum metallic target and oxygen as reactive gas. The reactive gas pulsing process (RGPP) is implemented to produce TaOx compounds with tunable chemical compositions. The argon mass flow rate is maintained constant whereas that of the oxygen gas is pulsed during the deposition. A constant pulsing period T = 10 s is used and the introduction time of the oxygen gas, namely the tON injection time, is systematically changed from 0 to 100 % of the pulsing period T. As the tON injection time increases, the chemical composition of as-deposited TaOx films is continuously changed from pure metallic tantalum to the over-stoichiometric Ta2O5 material. Analysis of the crystallographic structure by X-ray diffraction shows that the films adopt the body-centered cubic structure (metallic Ta) for the lowest tON injection time values (oxygen stoichiometry x &lt; 1.0) and become amorphous for the longest tON injection times. It is shown that the tON injection time is a key parameter to produce either homogeneous tantalum oxides, or periodic Ta/TaOx multilayers with alternations close to 3 nm. Similarly, optical transmittance spectra of the film/glass substrate system are recorded in the visible region and the electrical conductivity of the films is measured vs. temperature. Both exhibit a gradual evolution from metallic (300K = 8.17105 S m-1 with a null optical transmittance in the visible range) to semi-conducting (300K = 1.97103 S m-1 with a semi-transparent behavior) and finally to dielectric properties (300K &lt; 10-5 S m-1 for interferential films) as a function of the oxygen concentration in the films.

Bi0.5Na0.5TiO3-0.06BaTiO3 (BNT-BT) thin films were prepared by both chemical solution (CSD) and pulsed laser deposition (PLD). The microstructure, dielectric, and ferroelectric properties were investigated. High stability of the dielectric permittivity (∆ɛ/ɛ(150 °C) ≤ ± 15%) over a wide temperature range from room temperature to 300 °C was obtained. Distinctly, the CSD film showed high TCC stability with variation of ± 5% up to 250°C. Furthermore, the CSD film showed an unsaturated ferroelectric hysteresis loop characteristic of the ergodic relaxor phase, however the PLD one exhibited almost saturated loop signature of the coexistence of both ergodic and non-ergodic states. The energy storage properties of the prepared films were determined using the P–E loops obtained at different temperatures. The results showed that these films exhibit stable and improved energy storage density comparable to the ceramic capacitors. Moreover, the CSD film exhibited more rigidity and better energy storage density that exceeds 1.3 J/cm3 under low applied field of 317 KV/cm as well as interesting efficiency in a large temperature range. The obtained results are very promising for energy storage capacitors operating at high temperatures.

Polyanilines are a class of conductive polymers that have attracted significant interest in the field of organic electronics due to their unique properties. In this article, the fluorescence spectroscopy and photovoltaic properties of polyaniline-based thin films and copolymers are investigated. The study focuses on understanding the relationship between the composition and structure of polyanilines and their optical and electrical properties. The article discusses the results of experiments on the photoluminescent properties of S1-S9 copolymers in a DMSO solution and of thin-film photoresistors based on polyanilines. The findings reveal that the photovoltaic properties of the thin films depend on the conditions of their fabrication and their surface morphology. The solubility of polyanilines is excellent, making the production of electronic components compatible with modern printing technologies in organic electronics. The work also points out that the photoconductivity of polyanilines can be improved by incorporation of additional molecular groups into the polymer matrix. Overall, this study sheds light on the potential of polyanilines as promising materials for organic electronics and provides insights into how their properties can be optimized for specific applications.

Tantalum doped ZnO structures (ZnO:Ta) were synthesized and some of their characteristics were studied. ZnO material was deposited on silicon substrates by using a hot filament chemical vapor deposition (HFCVD) reactor. The raw materials were a pill made of a mixture of ZnO and Ta₂O₅ powders, and molecular hydrogen was used as a reactant gas. Percentage of tantalum was varied from 0 to 500 mg by varying the percentage of tantalum oxide in the mixture of the pill source, by holding a fixed amount of 500 mg of ZnO in all experiments. X-ray diffractograms confirmed the presence of zinc oxide in the wurtzite phase and metallic zinc with a hexagonal structure, and no other phase was detected. Displacements to lower angles of reflection peaks, compared with those from samples without contamination, were interpreted as the inclusion of the Ta atoms in the matrix of the ZnO. This fact was confirmed by EDS and XRD measurements. From SEM images from undoped samples exhibited mostly micro sized semi-spherical structures while doped samples displayed a trend to grown as nanocrystalline rods. The presence of tantalum during the synthesis affects the way of the growth. Green photoluminescence at naked eye was observed when Ta doped samples were illuminated by ultraviolet radiation and confirmed by PL spectra. PL intensity on Ta doped ZnO varied from those undoped samples up to 8 times.

In this paper, a novel synthesis for a chemical precursor for nanocrystalline VO2 coatings is elaborated. The compatibility of the precursor towards the substrate is optimized for spin coating. This is done by subjecting multiple solvents to contact angle measurements. A suitable thermal treatment is developed to densify the coating and to induce crystallization. Afterwards the microstructure of the coating is investigated using X-Ray diffraction, electron microscopy and ellipsometry techniques. To assess the thermochromic properties of the fabricated device, optical transmission experiments were conducted both at room temperature and at elevated temperature. A correlation between these thermochromic properties and coating thickness was investigated in order to obtain an optimized thermochromic device, where both high visual transparency and prominent thermochromic switching abilities are aimed for. In this work, an optimal coating thickness is proposed for a thermochromic coating with high switching ability and solar modulation.

Plasma polymerized (PP) thin films deposited in a soft or intermediate plasma discharge from hexamethyldisiloxane (HMDSO) were developed as sensors for the detection of volatile organic compounds (VOCs) vapors. Energy dispersive X-ray spectroscopy (EDX) and X-ray reflectometry (XRR) were performed to determine the organosilicon films elemental composition and density. Spectroscopic ellipsometry measurements were carried out to determine the refractive index of the films. Quartz crystal microbalance (QCM) and ellipsometry coupled to vapor sorption were used to investigate the sorption mechanism of several VOCs vapors into the films as a function of the plasma deposition conditions. The density and the refractive index of the PP-HMDSO films increased with the plasma energy due to a different chemical composition and different proportion of free volumes in the material network. The PP-HMDSO films showed different affinities towards the VOCs vapors depending on the plasma discharge energy. The films elaborated in the lowest plasma energy revealed a good sensitivity towards the VOCs especially toluene (one of the BTEX vapors) compared to the other films deposited under higher plasma energy. In addition, the selectivity between toluene and other non-BTEX VOCs such as heptane and ethanol decreased to become zero while increasing the plasma energy.

Magnetic and morphological properties of equiatomic B2-ordered FeRh thin films irradiated with single high-intensity ultrashort laser pulses are investigated. The goal is to elucidate the effect of femtosecond laser ablation on the magnetic properties of FeRh. We employed Scanning Magneto-Optical Kerr Effect (S-MOKE) microscopy to examine the magnetic phase after laser processing, providing high spatial resolution and sensitivity. Our results revealed the appearance of a magneto-optical signal from the bottom of ablation craters, suggesting a transition from antiferromagnetic to ferromagnetic behavior. Fluence-resolved measurements clearly demonstrate that the ablation threshold coincides with the threshold of the antiferromagnet-to-ferromagnet phase transition. The existence of such magnetic phase transition was independently confirmed by temperature-dependent S-MOKE measurements using a CW laser as a localized heat source. Whereas the initial FeRh film displayed a reversible antiferromagnet-ferromagnet phase transition, the laser-ablated structures exhibited irreversible changes in their magnetic properties. This comprehensive analysis revealed the strong correlation between the femtosecond laser ablation process and the magnetic phase transformation in FeRh thin films.

The main aspects of mercury sulfide and mercury selenide thin film synthesis using the chemical deposition method are considered. An analysis of various factors affecting film properties was conducted, including the study of how the nature of the substrate and its pre-treatment influence film properties. The effects of the working solution's temperature, deposition time, and annealing conditions on film characteristics were investigated. The impact of these parameters on the phase composition, as well as optical, electrical, and morphological properties of the films, is discussed and summarized. The paragraph also explains how the choice and concentration of initial reagents affect the parameters, characteristics, and properties of the obtained films.

In the present work, doped ZnO (ZnO:Al) thin film has been grown on Silicon (Si) substrate by DC sputtering. The obtained thickness of the film is 230 ± 5 nm. The films were subjected to swift heavy ion (SHI) irradiation 120 MeV, Ag⁹⁺ with different fluences ranging from 3 × 10¹¹ to 3 × 10¹³ ions/cm². To study the impact of SHI, both pristine and irradiated samples were characterized to obtain the structural, surface morphological and electrical properties using X-ray diffractometry (XRD), atomic force microscopy (AFM) and hall effect measurement system respectively. From XRD results it is observed that there is change in crystallinity of the film with increase in irradiation fluence. The surface morphological studies through AFM shows the increase in surface roughness with increase in fluence. A significant change is also observed in electrical parameters viz conductivity, mobility and carrier concentration. Conductivity, mobility and carrier concentration decreases with increasing fluence.

The effect of ferromagnetic CaMnO3 (CMO) addition on structural, magnetic, dielectric, and ferroelec-tric properties of BiFeO3 are presented. X ray diffraction and Raman investigation allowed the identifi-cation of single pseudo cubic perovskite structure. The magnetic measurement showed that the pre-pared films exhibit a ferromagnetic behavior at low temperature with both coercive field and remnant magnetization increased with increasing CMO content. However, a deterioration of magnetization was observed at room temperature. Ferroelectric study revealed an antiferroelectric like behavior with a pinched P-E hysteresis loop for 5%CMO doping BFO resulting in low remnant polarization and double hysteresis loops. Whereas, high remnant polarization and coercive field with a likely square hysteresis loop are obtained for 10 % CMO addition. Furthermore, a bipolar resistive switching behavior with a threshold voltage of about 1.8V is observed for high doped film that can be linked to the ferroelectric polarization switching.

The purpose of this research work was to synthesis bio-derived nanocomposite films by incorporating Na0.5Bi0.5TiO3 (NBT) nanoparticles into Chitosan matrix. The NBT nanoparticles were synthesized using a traditional solid-state technique. Then, through a solution casting approach, flexible composite films were fabricated using Chitosan polymer. The morphology and structural assessments were carried out utilizing scanning electron microscopy (SEM), X-ray diffraction and fourier transform infrared technique. The SEM micrographs showed that NBT nanoparticles were randomly distributed and interconnected with other particles, forming interconnected grains with substantial interspaces within the matrix. The spectral response between 300 and 800 nm of the composites is mainly governed by light scattering of NBT particles with diameter sizes in the 100 - 400 nm range and the bandgap of the NBT phase. The dielectric studies demonstrated that the composite films exhibited higher dielectric values compared to the pure Chitosan film. Besides, the increase of NBT amount was found to increase the dielectric values. Additionally, local piezoelectric measurements reveal the expected piezoelectric and ferroelectric behavior for the NBT particles dispersed into the polymer matrix, as locally probed by Piezoresponse Force Microscopy. The studied system bears interest for advanced biocompatible opto- and piezo-electric materials.

Silicon-based thin-films and nanostructures are of paramount importance in a wide range of applications, including microelectronics, photovoltaics, large area sensors, as well as biomedicine. The wide accessibility of silicon and its relatively low cost have driven a continuous improvement of the technology based on this element. Plasma technology has been widely used for the synthesis of coatings and nanostructures based on silicon. Moreover, it has given a fundamental contribution for continuously improving the control of the physicochemical properties of silicon-based materials, and for allowing the synthesis of nanometric structures with well-defined shape and morphology. In this work, we have reviewed the most interesting developments of plasma-assisted processed for the synthesis of Si-based materials, both inorganic and organic, in the last five years. A special attention has been given to the new techniques, or modifications of already existing ones, that open new possibilities for the synthesis of materials with new properties, as well as nanostructures with novel characteristics.

p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide and achieving that the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to10^{−3} Ω.cm, Hall mobility of tens cm2/V.s and a hole concentration from 10^{17} to 10^{19} cm^{−3}. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

A new process is reported for the incorporation of a fluoropolymer into a solid perovskite film. Poly(trifluoroethyl methacrylate) [CH2C(CH3)(CO2CH2CF3)]n was delivered to methylammonium lead iodide (CH3NH3PbI3) perovskite films by crystallizing the film in supercritical carbon dioxide/ethanol containing the dissolved fluoropolymer. The surface was characterized before and after fluoropolymer exposure using scanning electron microscopy, Raman spectroscopy and contact angle measurements. The results indicate that the fluoropolymer was incorporated into the perovskite film during the supercritical fluid crystallization process.

We report the synthesis and characterization of Poly Methyl-Meth-Acrylate (PMMA)/Poly vinylalcohol (PVA) polymeric blend doped with different concentrations of Copper oxide (CuO) nanoparticles (NPs). The (PMMA-PVA)/CuO nanocomposite hybrid thin films (wt. % = 0%, 2%, 4%, 8%, and 16%) of CuO NPs are deposited on glass substrates via dip-coating technique. The transmittance (T%), reflectance (R%), the absorption coefficient (α), the optical constants [refractive index (n), extinction coefficient (k)], optical dielectric functions [ɛ',ɛ''] are investigated and interpreted. Tauc, Urbach, Spitzer-Fan, and Drude models are employed to calculate the optical bandgap energy (Eg) and the optoelectronic parameters of the nanocomposite thin films. The refractive index and optical bandgap energy of of (PMMA-PVA) polymeric thin film are found to be (1.5 to 1.85) and 4.101 eV, respectively. Incorporation of specific concentrations of CuO-NPs in (PMMA-PVA) polymeric thin films leads to a noticeable decrease in the optical bandgap energy and to an increase of the refractive index. Moreover, Fourier Transform Infrared Spectroscopy (FTIR) transmittance spectra are measured and analyzed for undoped and doped polymeric thin films to pinpoint the major vibrational modes in the spectral range (500 and 4000 cm-1), as well as, the nature of network bonding in both systems. Thermal stability of thin films is investigated by performing thermogravimetric analysis (TGA). The TGA thermograms confirm that both doped polymeric thin films are thermally stable at temperatures below 110°C which enables them to be attractive for a wide range of optical and optoelectronic applications. Our results indicate that optical, vibrational and thermal properties of both polymeric thin films can be tuned for specific applications by the appropriate corporation of particular concentrations of CuO-NPs.

We report on the effects of the film morphology on the fluorescence spectra for a thin film including a quinoxaline-based co-polymer (TQ1) and a fullerene derivative (PC₇₀BM). The ratio between the polymer and the fullerene derivative, as well as the processing solvent were varied. Beside the main emission peak at 700 nm in the fluorescence spectra of thin films of this phase-separated blend, a broad emission band is observed with a maximum at 520 - 550 nm. The intensity of this emission band decreases with an increasing degree of mixing in the film and becomes most prominent in thicker films, films with high PC₇₀BM content, and films that were spin-coated from solvents with lower PC₇₀BM solubility. We assign this emission band to aggregated PC₇₀BM.

Three-dimensional nanocomposite networks consisting of percolated Si nanowires in a SiO₂ matrix, Si:SiO₂, were studied. The structures were obtained by reactive ion beam sputter deposition of SiO_x (x ≈ 0.6) thin films at 450 °C and subsequent crystallization using conventional oven as well as millisecond line focus laser annealing. Rutherford backscattering spectrometry, Raman spectroscopy, X-ray diffraction, cross-sectional and energy-filtered transmission electron microscopy were applied for sample characterization. While oven annealing resulted in a mean Si wire diameter of 10 nm and a crystallinity of 72 % within the Si volume, almost single-domain Si structures with 30 nm in diameter and almost free of amorphous Si were obtained by millisecond laser application. The structural differences are attributed to the different crystallization processes: Conventional oven tempering proceeds via solid state, millisecond laser application via liquid phase crystallization of Si. The 5 orders of magnitude larger diffusion constant in the liquid phase is responsible for the three times larger Si nanostructure diameter. In conclusion, laser annealing offers not only significantly shorter process times but moreover a superior structural order of nano-Si compared to conventional heating.

Luminescent properties of epitaxial Cu2O thin films were studied in 10-300 K temperature range and compared with luminescent properties of Cu2O single crystals. Cu2O thin films were deposited epitaxially by the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships and encapsulated surface. Cu2O (100) and (111) single crystal samples were cut from a crystal rod grown by the floating zone method. Luminescence spectra of thin films contain the same emission bands as single crystals around 720, 810 and 910 nm, characterizing VO2+, VO+ and VCu defects, correspondingly. Additional emission bands, whose origin is under discussion, are observed around 650-680 nm, while the exciton features are negligibly small. The relative mutual contribution of the emission bands varies depending on the particular thin film sample. Existence of the domains of crystallites with different orientation determines the polarization of luminescence. PL of both Cu2O thin films and single crystals is characterized with negative thermal quenching in the low temperature region, the reason of this phenomenon is discussed.

Titanium dioxide (TiO2) and aluminum oxide (Al2O3) coatings have been investigated in a wide range of bio-applications due to their biodegradation and biocompatibility properties, that are key parameters for their use in the food packaging and biomedical devices fields. The present study evaluates and compares the electrochemical behavior of the non-coated, commercial resin-coated, TiO2-coated and Al2O3-coated aluminum in commercial beer electrolyte. For this, TiO2 and Al2O3 thin films were deposited on aluminum (Al) substrates using atomic layer deposition (ALD). The evaluation of the corrosion barrier layer properties was performed by linear sweep voltammetry (LSV) and electrochemical impedance spectroscopy (EIS). In addition, profilometry, grazing incidence X-ray diffractometry (GIXRD), scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FT-IR) analyses were performed to investigate the physical and chemical properties of the pristine and / or corroded samples. TiO2 and Al2O3 films presented an amorphous structure, a morphology that follows Al substrate surface, and a thickness of around 100 nm. Analysis of LSV data showed that ALD coatings promoted a considerable increase in corrosion barrier efficiency being 86.3% for TiO2-coated Al and 80% for Al2O3-coated Al in comparison with 7.1% of commercial resin-coated Al. This is mainly due to the lower electrochemical porosity, 11.4% for TiO2-coated Al and 20.4% for Al2O3-coated Al in comparison with 96% of the resin-coated Al, i.e. an increase of up to twofold in the protection of Al when coated with TiO2 compared to Al2O3 coated. The EIS results allow us to complement the discussions about the reduced corrosion barrier efficiency of the Al2O3 film for beer electrolyte once SEM and FT-IR analyzes did not show drastic changes in both investigated ALD films after the corrosion assays. The above results indicate that ALD TiO2 and Al2O3 films may be a viable alternative to replace the synthetic resin coatings frequently used in aluminum cans of use in the food industry.

Enhancement of mechanical properties by using TiN/TiCN/TiC multilayer thin films deposited on commercially pure cast Titanium (CP-Ti), Ti6Al4V and silicon (Si) substrates via magnetron sputtering technique was investigated in this study. The structural, chemical and mechanical properties of the coatings were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanoindentation and scratch test. Results of the XRD analysis showed reflections corresponded to FCC (1 1 1) cubic and polycrystalline structure for TiN/TiCN/TiC films. XPS analysis revealed formation of titanium nitride, titanium carbonitride and titanium carbide in the coatings. According to SEM images, the coatings demonstrated dense cross-sectional morphology and columnar structure as well as good adhesion to the substrate with a thickness of 1.77 μm deposited on silicon (1 0 0). Scratch and nanoindentation test results showed the best mechanical behavior for the coated Ti6Al4V substrate material with the 19.96 GPa hardness and 25 N critical load values, because of its higher hardness and toughness of substrate in compared to Cp-Ti substrate.

Enhancement of mechanical properties by using TiN/TiCN/TiC multilayer thin films deposited on commercially pure cast Titanium (CP-Ti), Ti6Al4V and silicon (Si) substrates via magnetron sputtering technique was investigated in this study. The structural, chemical and mechanical properties of the coatings were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanoindentation and scratch test. Results of the XRD analysis showed reflections corresponded to FCC (1 1 1) cubic and polycrystalline structure for TiN/TiCN/TiC films. XPS analysis revealed formation of titanium nitride, titanium carbonitride and titanium carbide in the coatings. According to SEM images, the coatings demonstrated dense cross-sectional morphology and columnar structure as well as good adhesion to the substrate with a thickness of 1.77 μm deposited on silicon (1 0 0). Scratch and nanoindentation test results showed the best mechanical behavior for the coated Ti6Al4V substrate material with the 19.96 GPa hardness and 25 N critical load values, because of its higher hardness and toughness of substrate in compared to Cp-Ti substrate.

In biology molecules and macromolecules like sugars, proteins, DNA, and RNA are of utter importance. Detecting their presence as well as their conformation is still a challenge in many cases. It is well known that the vibrational states of such molecules lie from the infrared to the TeraHertz range. Spectroscopy can be used to detect such compounds and probe their conformation. Still, terahertz spectroscopy on biosample is a challenge for two main reasons: water absorption; and the small size of the samples. The sample volume is smaller than the cube of the TeraHertz wavelength; the light matter interactions are thus extremely reduced. In this paper, we present the design, fabrication, characterization and the first typical uses of a biophotonic device aiming at increasing light matter interaction to enable terahertz spectroscopy of minute samples on a broad band (0.2–2 THz). We demonstrate time domain spectroscopy experiments on few µl samples showing the validity of our approach.

The undoped and tungsten (W)-doped vanadium dioxide (VO₂) thin films were prepared by electron beam evaporation associated with ion-beam assisted deposition (IAD). The influence of different W-doped contents (3%-5%) on the optical, electrical, structural, and thermos-mechanical properties of VO₂ thin films was investigated experimentally. Spectral transmittance results showed that with the increase of W-doped contents, the transmittance in the visible light range (400-750 nm) decreases from 60.2% to 53.9%, and the transmittance in the infrared wavelength range (2.5 μm to 5.5 μm) drops from 55.8% to 15.4%. As the W-doped content increases, the residual stress in the VO₂ thin film decreases from -0.276 GPa to -0.238 GPa, but the surface roughness increases. For temperature-dependent spectroscopic measurements, heating the VO2 thin films from 30°C to 100°C showed the most significant change in transmittance for the 5% W-doped VO₂ thin film. When the heating temperature exceeds 55°C, the optical transmittance drops significantly, and the visible light transmittance drops by about 11%. Finally, X-ray Diffraction (XRD) and scanning electron microscope (SEM) were used to evaluate the microstructure characteristics of VO₂ thin films.

In this work, zinc oxide (ZnO) thin film has been fabricated on glass substrate using pulse laser ablation (PLA) technique. The effect of laser pulses of 1000, 1500, 2000 pulses at laser energy 700 mJ as well as, laser energy of 600, 700, and 800 mJ at fixed laser pulses of 1500 pulse, with methanol as a solvent on the structural properties of prepared films using XRD, SEM and EDX. XRD results revealed that the ZnO thin films have hexagonal structure with polycrystalline in nature with preferred orientation of (002). Crystalline size was increased with the increasing of the pulses and at energy of 700 mJ and pulse of 1500 pulse seemed nanostructure like tree leaf. In addition, narrow FWHM and no phase change have been observed in all cases. SEM images showed that for all cases the films were homogenous with some island and cluster then cracking started to obtain with the increasing of increase the pulse number. EDX analysis showed that the prepared films were free of defects and contaminations.

An ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was applied to anneal amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFT) at various laser beam powers ranging from 0 to 280 mW. Laser irradiation was selectively carried out on the a-IGZO channel area using the beam scanning method after the a-IGZO TFT was formed through indium-tin oxide (ITO) electrode patterning and a subsequent lift-off process. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser-beam powers ranging from 54 to 120 mW. No meaningful parameters were investigated for laser beams higher than 200 mW. By extracting the energy band gap and work function of a-IGZO from the transmittance and ultraviolet photoelectron spectroscopy (UPS) results, the ITO electrode/a-IGZO channel energy band structures were established under different laser annealing conditions, and the electron injection mechanism from the ITO to the a-IGZO channel was analyzed and optimized at a laser beam power of 120 mW. The results show that the electrical characteristics of the a-IGZO TFTs can be improved without any heat damage to the substrate because of the selective annealing process.

This article describes in detail the numerical modeling of a CZTS (copper zinc tin sulfide) based kesterite solar cell. The Solar Cell Capacitance Simulator -one-dimension (SCAPS-1D) software was used to simulate MO/CZTS/CdS/ZnO/FTO structured solar cells. The parameters of different photovoltaic thin-film solar cells are estimated and analyzed using numerical modeling. The effects of various parameters on the performance of the photovoltaic cell and the conversion efficiency are discussed. Since the response of the solar cell is also contingent on its internal physical mechanism, J-V characteristic measures are insufficient to characterize the behavior of a device. Different features, as well as different potential conditions, must be considered for simulation, disregarding the belief in the modeling of a solar cell. With a conversion efficiency of 25.72%, a fill factor of 83.75%, a short-circuit current of 32.96436 mA/cm2 and an open-circuit voltage of 0.64V, promising optimized results have been achieved. The findings will be useful in determining the feasibility of fabricating high-efficiency CZTS-based photovoltaic cells. The efficiency of a CZTS-based experimental solar cell is also discussed. First, the effects of experimentally developed CZTS solar cells are simulated in the SCAPS-1D environment. The experimental results are then compared to the SCAPS-1D simulated results. The conversion efficiency of an optimized system increases after cell parameters are optimized. Using one-dimensional SCAPS-1D software, the effect of system parameters such as the thickness, acceptor and donor carrier concentration densities of absorber and electron transport layers, and the effect of temperature on the efficiency of CZTS-based photovoltaic cells is investigated. The proposed results will greatly assist engineers and researchers in determining the best method for optimizing solar cell efficiency, as well as in the development of efficient CZTS-based solar cells.

This paper constituted an extension of two previous studies concerning the mathematical development of the grain boundary grooving in polycrystalline thins films in the cases of the evaporation/condensation and diffusion taken separately. The thermal grooving processes are deeply controlled by the various mass transfer mechanisms of evaporation–condensation, surface diffusion, lattice diffusion, and grain boundary diffusion. This study proposed a new original analytical solution to the mathematical problem governing the grain groove profile in the case of simultaneous effects of evaporation-condensation and diffusion in polycrystalline thin films submitted to thermal and mechanical stress, and fatigue effects; by resolving the corresponding fourth-order partial differential equation ∂y∂t=C∂2y∂x2-B∂4y∂x4 obtained from the approximation y'2≪1. The comparison of the new solution to that of diffusion alone proved an important effect of the coupling of evaporation and diffusion on the geometric characteristics of the groove profile. A second analytical solution based on the series development was also proposed. It was proved that change of the boundary conditions of the grain grooving profile largely affected the different geometric characteristics of the groove profile.

Titanium oxynitride thin films are deposited by DC reactive magnetron sputtering. A pure titanium target is sputtered in a reactive atmosphere composed of argon, oxygen and nitrogen gases. The oxygen mass flow rate as well as that of the nitrogen gas are both pulsed during the deposition time using an independent and rectangular signal for each reactive gas. A constant pulsing period T = 45 s is applied for both reactive gases and a delay time  of 34 s between N2 and O2 injection times is set for all depositions. Oxygen and nitrogen duty cycles are systematically and independently changed from 0 to 100% of their pulsing period. From real time measurements of the Ti target potential and total sputtering pressure, it is shown that the reactive process alternates between oxidized, nitrided and elemental sputtering modes as a function of the oxygen and nitrogen injection times. The full poisoning of the Ti target surface by oxygen and/or nitrogen can be avoided for some given ranges of O2 and N2 duty cycles. Deposition rates of titanium oxynitride films are substantially enhanced and can be adjusted between that of pure Ti and TiN films with a gradual transition of their optical transmittance in the visible range. These results support that titanium oxynitride compounds exhibiting absorbent to transparent behaviors can be precisely sputter-deposited by means of a two reactive gases pulsing process.

Hydrotalcites (HTlc) represents a class of nanostructured layered materials that may be employed in a variety of applications, from green to bio technologies. In this paper, we report an investigation on HTlc made of Mg and Fe, recently employed to improve the growth in vitro of osteoblasts within a keratin sponge. We have carried out an analysis of powder materials and of HTlc dispersed in keratin and spin-coated on a Si/SiO2 substrate at different temperatures. A DC magnetic study of the powders has been carried out with a Quantum Design Physical Property Measurement System, equipped with a Vibrating Sample Magnetometer. The data gathered prove that these HTlc are fully paramagnetic, and keratin shows a very small magnetic response. Optical and Atomic Force Microscopy analyses of the thin films provide a detailed picture of clusters randomly dispersed in the films with various dimensions. The magnetic properties of these films have been characterized using the Nano Magneto Optical Kerr Effect (NanoMOKE) down to 7.5K. The data collected show that the local magnetic properties can be mapped with a micrometric resolution distinguishing HTlc regions from keratin ones. This approach opens new perspectives in the characterization of these composite materials.

Lead-based ternary chalcogenide thin films of the (PbTe)1-x(PbS)x system were obtained by plasma-enhanced chemical vapor deposition technique (PECVD) under conditions of a nonequilibrium low-temperature argon plasma of an RF discharge (40.68 MHz) at a reduced pressure (0.01 Torr). High-purity elements were directly used as starting materials – Pb, S and Te. Plasma-chemical synthesis was carried out on the surface of of c-sapphire and silicon substrate. The physicochemical properties of the films were studied by various analytical methods. The dependence of the Seebeck coefficient, resistivity, and power factor on the structural properties and composition has been studied. The thermoelectric characteristics were found to be dependent on the film composition. Upon the selection of optimal sulfur concentration one can increase the power factor as compared to single phase PbS ot PbTe films.

Mechanical robustness, biocompatibility, and antibacterial performances are key features for materials suitable to be used in tissue engineering applications. In this work, we investigated the link existing between structural and functional properties of TiCu(Ag) thin films deposited by physical vapor deposition magnetron sputtering on Si substrates. The thin films were characterized by X-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TiCu(Ag) thin films showed complete amorphous structure and improved mechanical properties in comparison with pure Ti films. However, for contents in excess of 20% Ag, we observed the appearance of nanometric Ag crystallite. The TiCu(Ag) thin films displayed excellent biocompatibility properties, allowing adhesion and proliferation of the human fibroblasts MRC-5 cell line. Moreover, all the investigated TiCu(Ag) alloy display bactericidal properties, preventing the growth of both Pseudomonas aeruginosa and Staphylococcus aureus. Results obtained from biological tests have been correlated to the surface structure and microstructure of films. The excellent biocompatibility and bactericidal properties of these multifunctional thin films opens to their use in tissue engineering applications.

Transparent conducting oxides (TCO) with high electrical conductivity and at the same time high transparency in the visible spectrum are an important class of materials widely used in many devices requiring a transparent contact such as light-emitting diodes, solar cells and display screens. Since the improvement of electrical conductivity usually leads to degradation of optical transparency, a fine-tuning sample preparation process and a better understanding of the correlation between structural and transport properties is necessary for optimizing the properties of TCO for use in such devices. Here we report a structural and magnetotransport study of tin oxide (SnO₂), a well-known and commonly used TCO, prepared by a simple and relatively cheap Atmospheric Pressure Chemical Vapour Deposition (APCVD) method in the form of thin films deposited on soda-lime glass substrates. The thin films were deposited at two different temperatures (which were previously found to be close to optimum for our setup), 590 °C and 610 °C, and with (doped) or without (undoped) the addition of fluorine dopants. Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GIXRD) revealed the presence of inhomogeneity in the samples, on a bigger scale in form of grains (80–200 nm), and on a smaller scale in form of crystallites (10–25 nm). Charge carrier density and mobility extracted from DC resistivity and Hall effect measurements were in the ranges 1–3 × 10²⁰ cm⁻³ and 10–20 cm²/Vs, which are typical values for SnO₂ films, and show a negligible temperature dependence from room temperature down to -269 °C. Such behaviour is ascribed to grain boundary scattering, with the interior of the grains degenerately doped (i.e., the Fermi level is situated well above the conduction band minimum) and with negligible electrostatic barriers at the grain boundaries (due to high dopant concentration). The observed difference for factor 2 in mobility among the thin-film SnO₂ samples most likely arises due to the difference in the preferred orientation of crystallites (texture coefficient).

Walls-like structured monoclinic WO3 thin films were obtained by spray deposition method for further integration in gas sensors. For sensing applications, it is very important to achieve a high surface-to-volume ratio surface together with a proper thin films structure. The present communication reports on the effect of the sprayed solution volume variation (as a thickness variation element) on the detailed Raman spectroscopy for WO3 thin films with different thicknesses grown from precursor solutions with two different concentrations. Detailed analysis of the two series of samples shows that the growing thickness strongly affects the films morphology while their crystalline structure is only slightly affected. The Raman analysis contribute to refining the structural features clarifications. It was observed that, for both concentrations, the increase in thickness seems to slightly affect the stoichiometry of material and, in association with surface morphology variations, provide new possibilities for fine tuning of films properties towards enhanced as sensing applications. Further studies are ongoing.

In this study, we explored terahertz (THz) optical properties of the as-deposited and rapid thermal annealing (RTA) at 400°C, 600°C and 800°C of indium-tin-oxide (ITO) thin-films sputtered on high-resistivity silicon (HR-Si) substrate. We further investigated THz frequency dependence complex refractive indices and conductivity of those as-prepared and annealed ITO thin films. We note the transmittance enhanced from 27 % to 39 % for ITO thin film treated with RTA at 800°C while the real part of conductivity improved from 1019 Ω-1∙cm-1 to 4881 Ω-1∙cm-1 for ITO thin film treated with RTA at 600°C in the frequency range of 0.2 to 1 THz. The mobility, carrier concentration, plasma frequency and relaxation time of those sample were also deduced by fitting the experimental results with the Drude-Smith model. For example, the mobility of 29 cm2/V∙s, 110 cm2/V∙s, 226 cm2/V∙s and 70 cm2/V∙s, respectively is deduced for as-deposited, RTA at 400°C, RTA at 600°C and 800°C of ITO thin-films. In addition, the optical bandgap of those ITO thin films were evaluated with a typical Tauc plot showing extrapolation of photon energy spectrum. The transmittance, absorption coefficient and complex refractive indices of those ITO thin films were extracted by Swanepoel method using experimental transmittance and reflectance spectrum throughout the wavelength range from 400 to 1000 nm. Moreover, as expected, the transmittance of the ITO thin film treated with RTA at 800°C is improved at the wavelength of the visible light spectrum. We also displayed the surface morphology, microscopic structural properties and typical chemical composition of as-deposited and RTA at 400°C, RTA at 600°C and 800°C of ITO thin-films. We strongly believed the present study will lead to further enhancement for THz optoelectronics applications.

In this work, the ternary titanium, copper and silver (Ti-Cu-Ag) system is investigated as a potential candidate for the production of mechanically robust biomedical thin films. The coatings are produced by physical vapor deposition-magnetron sputtering (MS-PVD). The composite thin films are deposited on a silicon (100) substrate. The ratio between Ti and Cu was approximately kept one, with the variation of the Ag content between 10 and 35 at.%, while the power on the targets is changed during each deposition to get the desired Ag content. Thin film characterization is performed by x-ray diffraction (XRD), nanoindentation (modulus and hardness) and Atomic force microscopy to determine the surface topography. The residual stresses are measured by focused ion beam and digital image correlation method (FIB-DIC). The produced Ti-Cu-Ag thin films appear to be smooth, uniformly thick and exhibit amorphous structure for the Ag contents lower than 25 at.%, with a transition to partially crystalline structure for higher Ag concentrations. The Ti-Cu control film shows higher values of 124.5 GPa and 7.85 GPa for modulus and hardness respectively. There is a clear trend of continuous decrease in the modulus and hardness with the increase of Ag content, as lowest value of 105.5 GPa and 6 GPa for 35 at.% Ag containing thin films. In particular, a transition from the compressive (-36.5 MPa) to tensile residual stresses between 229 MPa and 288 MPa are observed with an increasing Ag content. The obtained results suggest that the Ag concentration should not exceed 25 at.%, in order to avoid an excessive reduction of the modulus and hardness with maintaining (at the same time) the potential for an increase of the antibacterial properties. In summary, Ti-Cu-Ag thin films shows characteristic mechanical properties that can be used to improve the properties of biomedical implants such as Ti-alloys and stainless steel.

Grazing incidence X-Ray Diffraction spectroscopy was employed to characterize crystallinity of Iron, Nickel, Copper and Tungsten, prepared by sparking discharge process in presence of 0.4 T magnetic field at ambient temperature 25 °C. Iron thin film preserved crystallinity even after one year of ageing. Nickel exhibit higher crystallinity when sparked in nitrogen gas flow from the one sparked in oxygen. Tungsten was successfully crystalized after just 40 minutes of sparking inside of magnetic field.

The enormous potential of renewable bioresources is expected to play a key role in the development of the EU’s sustainable circular economy. In this context, inexhaustible, biodegradable, non-toxic and carbon-neutral forest-origin resources are very attractive for the development of novel sustainable products. The main structural component of wood is cellulose, which, in turn, is the feedstock of nanocellulose, one of the most explored nanomaterials. Different applications of nanocellulose have been proposed, including packaging, functional coatings, insulating materials, nanocomposite fields among others. However, the intrinsic flammability of nanocellulose restricts its use in some industries where fire risk is a concern. This paper overviews the most recent studies of the fire resistance of nanocellulose-based materials, focusing on thin films, coatings and aerogels. Along with effectiveness, increased attention to sustainable approaches is considered in developing novel fire-resistant coatings. The great potential of bio-based fire-resistant materials, combined with conventional non-halogenated fire retardants FRs, has been established. The formulation methods, types of fire retardants and their action modes, and methods used for analysing fire retardancy are discussed in the frame of this overview.

Magnetron sputtering was used for producing Titanium Vanadium Nitride (TiVN) coatings on a variety of substrates. In this research, we investigate how changing the sputtering power and nitrogen: argon (N2:Ar) gas ratio affects the structural and tribological properties of TiVN coatings. Scanning Electron Microscope (SEM) technique was used to examine TiVN coating surface morphology. Both variants showed a gradual increase in the intensity of the TiVN coating's (111) and (222) peaks. TiVN coating's tribological properties were examined using a pin-on-disc tribometer with varying loads, speeds, and sliding distances. The wear rates of TiVN-coated brass pins were in the range of 2.5×10-4 to 9.14×10-4 mm3/Nm depending on load, sliding distance, and gas ratio variation, when compared to the wear rates of TiVN-coated brass pins deposited at various power, which ranged from 1.76×10-3 to 5.87×10-3 mm3/Nm.

Highly transparent thin films with the chemical formula BaSrMgWO6 were deposited by spin coating using a solution of nitrates of Ba, Sr and Mg and ammonium paratungstate in dimethylformamide with a ratio Ba:Sr:Mg;W=1:1:1:1. XRD, SEM, EDX and XPS investigations evidenced that an annealing at 800 ºC for 1h leaves the structure amorphous with a precipitate on the surface and that a supplementary annealing at 850 ºC for 45 min forms a nanocrystalline structure and dissolves a part of precipitates. It was evidenced a textured double perovskite cubic structure (61.9%) decorated with tetragonal and cubic impurity phases (12.7 %) like BaO2, SrO2 and MgO and an under-stoichiometric phase (24.4%) with the chemical formula Ba2-(x+y) SrxMgyWO5. From transmittance measurements the values of optical band gap were estimated for the amorphous (Eg= 5.15) and nanocrystalline (Eg=4.58 eV) phases. The presence of a lattice disorder was indicated by the high values of Urbach and weak absorption tail energies A decrease in their values was observed and attributed to the crystallization process and cation redistribution.

In this study we have investigated the effect of the addition of Nb2O5 (up to 5 mol%) on the structure and luminescent properties of ZnO-B2O3 glass doped with 0.5 mol % Eu2O3 by using of infrared (IR), Raman and photoluminescence (PL) spectroscopy. Physical properties as molar volume, oxygen packing density and glass transition temperature were determined using the results of differential thermal analyisis (DTA) and Archimedes principle for density. IR and Raman spectra revealed that niobium ions incorporate into the base zinc borate glass as NbO4 trtraherda and NbO6 octahedra. A strong red emission from the 5D0 level of Eu3+ ions was registered under near UV (392 nm) excitation using the sharp 7F0 - 5L6 transition of Eu3+. The integrated fluorescence intensity ratio R (5D0 → 7F2/5D0 → 7F1) was calculated to estimate the degree of asymmetry around the active ion, suggesting a location of Eu3+ in non-centrosymmetric sites. The higher Еu3+ luminescence emission observed in zinc borate glasses containing 1÷5 mol% Nb2O5 compared to the Nb2O5-free zinc borate glass evidences that Nb2O5 is suitable component for modification of host glass structure and improving the emission intensity.

This study aimed to discuss the combined theoretical and experimental results of elastic properties of the tungsten trioxide films supported on Quartz (YX)/45°/10° resonator, as surface acoustic wave (SAW) device. The SAW system with different thicknesses of WO3 thin films were imaged and structurally characterized by X-Ray diffraction, atomic force and transmission electron microscopy. The deposited WO3 films (100 nm, 200 nm and 300 nm) were crystallized in a single monoclinic phase. The acoustoelectric properties of the SAW system were obtained by combining theoretical simulations with experimental measurements. The modeling of the SAW devices has been performed by the finite element and boundary element methods (FEM/BEM). The theoretical and experimental electrical admittances responses obtained at room temperature gave access to elastic constants. The gravimetric effect of the deposited layers is observed by a resonance frequencies shift to lower values with thicknesses film. Moreover, the acoustic losses are affected by the dielectric losses of the WO3 films, while the resonant frequency decreases almost linearly. SAW devices revealed strong displacement fields with low acoustic losses as a function of WO3 thicknesses. For all the deposited layers, the Young's modulus and the Poisson coefficient obtained are respectively of 8 GPa and 0.5.

As a novel layered noble metal dichalcogenide material, palladium diselenide (PdSe₂) has attracted wide interest due to its excellent optical and electronic properties. In this work, a strong third-order nonlinear optical response of 2D PdSe₂ films is reported. We conduct both open-aperture (OA) and closed-aperture (CA) Z-scan measurements with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe₂ film of β = 3.26 ×10^-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n₂ = -1.33×10^-15 m²/W – two orders of magnitude larger than bulk silicon. In addition, the variation of n₂ as a function of laser intensity is also characterized, with n₂ decreasing in magnitude when increasing incident laser intensity, becoming saturated at n₂ = -9.96×10^-16 m²/W at high intensities. Our results show that the extraordinary third-order nonlinear optical properties of PdSe₂ have strong potential for high-performance nonlinear photonic devices. Keywords: 2D materials, PdSe₂ films, Z-scan technique, Kerr nonlinearity, nonlinear photonics.

We report enhanced nonlinear optics in complementary metal-oxide-semiconductor (CMOS) compatible photonic platforms through the use of layered two-dimensional (2D) graphene oxide (GO) films. We integrate GO films with silicon-on-insulator nanowires (SOI), high index doped silica glass (Hydex) and silicon nitride (SiN) waveguides and ring resonators, to demonstrate an enhanced optical nonlinearity including Kerr nonlinearity and four-wave mixing (FWM). The GO films are integrated using a large-area, transfer-free, layer-by-layer method while the film placement and size are controlled by photolithography. In SOI nanowires we observe a dramatic enhancement in both the Kerr nonlinearity and nonlinear figure of merit (FOM) due to the highly nonlinear GO films. Self-phase modulation (SPM) measurements show significant spectral broadening enhancement for SOI nanowires coated with patterned films of GO. The dependence of GO’s Kerr nonlinearity on layer number and pulse energy shows trends of the layered GO films from 2D to quasi bulk-like behavior. The nonlinear parameter of GO coated SOI nanowires is increased 16 folds, with the nonlinear FOM increasing over 20 times to FOM > 5. We also observe an improved FWM efficiency in SiN waveguides integrated with 2D layered GO films. FWM measurements for samples with different numbers of GO layers and at different pump powers are performed, achieving up to ≈7.3 dB conversion efficiency (CE) enhancement for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. These results reveal the strong potential of GO films to improve the nonlinear optics of silicon, Hydex and SiN photonic devices.

Herein, we evaluated the electrophoretic deposition of nanohydroxyapatite/superhydrophilic multiwalled carbon nanotube composites (nHAp/MWCNT) onto stainless steel biomedical alloys for applications in bone tissue engineering. First, nHAp/MWCNT composites were dispersed into 0.042 mol L⁻¹ of Ca(NO₃)₂·4H₂O + 0.025 mol L⁻¹ NH₄H₂PO₄ electrolytes (pH = 4.8) at two different concentrations. Next, a voltage of −2 V was applied using 316L stainless steel as a working electrode and (0.27 cm²), a high-purity platinum coil wire as the auxiliary electrode, and an Ag/AgCl(3 M) electrode was used as the reference electrode. The nHAp/MWCNT composites were characterized by transmission electron microscopy. The deposited nHAp and nHAp/MWCNT films were characterized by profilometry, scanning electron microscopy, X-Ray diffractometry and Raman spectroscopy. Human osteoblast cells were cultivated with the different materials, and in vitro cytotoxicity was evaluated using lactate dehydrogenase (LDH) assay. The osteogenesis process was evaluated by mRNA levels of the three genes that are directly related to bone repair: Alkaline Phosphatase, Osteopontin and Osteocalcin. We showed that rough, crystalline apatite thin films containing phases of nHAp were successfully deposited onto 316L stainless steel alloys. Also, we noticed that nHAp/MWCNT thin films deposited onto 316L stainless steel alloys upregulated the expression of important genes related to bone mineralization and maturation. Our results strongly support the possibility of this new alternative to modify the surface of metallic biomedical alloys to promote bone tissue regeneration.

This work examines the impact of the nozzle-substrate distance (NSD) on the structural, optical and electrical properties of fluorine-doped tin oxide (FTO) thin films. The films were grown by spray pyrolysis with the chemical formulation of “Streaming Process for Electroless and Electrochemical Deposition technology” (SPEED) technique. The characterization technique such as XRD, SEM, UV-spectrophotometry and Hall Effect measurement were employed for studying the structural, optical and electrical properties of the FTO films at various NSD. The NSD was varied from 25-32cm amid the experiment. All FTO films are polycrystalline, tetragonal crystal structure with strong orientation along the (211) reflection. SEM properties study demonstrated slight reliance on NSD and have uniform films which are a disciple to substrate at NSD of 27 and 30 cm, however, crumbled at 25cm and 32cm NSD. They likewise displayed a mud-look like morphology and smooth white appearance. The average optical transmittance of all films is over 80% in the noticeable at UV range. The band gap investigation demonstrates the average value of 3.5eV and the resistivity was found to diminish with increasing NSD at 30 cm. Both mobility and carrier concentration of the FTO films follow a similar trend. The average figure of merit of 4.98 was obtained which is an improvement based on our previous results. The FTO samples grown at 27 and 30 cm NSD in this work are best FTO samples and hence could serve as a promising candidate in dye sensitized solar cells. Therfore, graphene has been employed in different concentrations in our ongoing FTO optimization research so as to further improve on the FTO’s figure of merit.

Conjugated polymers (CPs) offer potentials for sustainable semiconductor devices due to their low cost, and inherent molecular self-assembly. Enhanced crystallinity and molecular orientation in thin films of solution-processable CPs have significantly improved organic electronic device per-formance. In this work, three methods namely spin-coating, dip-coating, and unidirectional float-ing-film transfer method (UFTM) were utilized with their parametric optimization for fabricating RR-P3HT films. These films were then utilized for their characterization via optical and micro-structural analysis to elucidate dominant roles of molecular orientation, and crystallinity in con-trolling charge transport in organic field-effect transistors (OFETs). OFETs fabricated by RR-P3HT thin films using spin-coating and dip-coating displayed field-effect mobility (μ) of 8.0 × 10-4 cm2V-1s-1 and 1.3 × 10-3 cm2V-1s-1, respectively. This two-time enhancement in (µ for dip-coated films was attributed to its enhanced crystallinity. Interestingly, UFTM films based OFETs demon-strated μ of 7.0 × 10-2 cm2V-1s-1, >100 times increment as compared to its spin-coated counterpart This superior device performance is attributed to synergistic influence of higher crystallinity and molecular orientation. Since the crystallinity of dip-coated and UFTM-thin films are similar ~50 times improved µ of UFTM thin films suggest a dominant role of molecular orientation as com-pared to crystallinity in controlling the charge transport.

In this study, Cu/Ni and Cu/Al multilayer thin films with individual layer thickness varying from 25 nm to 200 nm were deposited at room temperature and further annealed up to 300 ℃. The mechanical and microstructural properties of the multilayers were characterized by nanoindentation, x-ray diffraction, and scanning electron microscopy. Both systems exhibited an increase in hardness with increasing annealing temperature. However, the Cu/Ni system showed a gradual and moderate (up to 30%) hardness increase from room temperature to 300 ℃, while the Cu/Al system showed a sharp increase (~150%) between 125℃ and 200℃. This distinct strengthening behavior is attributed to solid solution formation in Cu/Ni and diffusion-activated intermetallic formation in Cu/Al.

The dynamic and surface manipulation of the M13 bacteriophage meeting application demands enable a pathway to design efficient applications with high selectivity and responsivity rate. Herein, we report the role of the M13 bacteriophage thin film layer deposited on an optical nanostructure involving gold nanoparticles/SiO2/Si and its influence on optical and geometrical properties. The thickness of the M13 phage layer was either controlled by varying the concentration or humidity exposure levels, and optical studies were conducted. We designed a standard and dynamic model based upon three-dimensional finite-difference time-domain (3D FDTD) simulations distinguishing the necessity of each model under variable conditions. As seen from the experiments, the origin of respective peak wavelength positions is addressed in detail with the help of simulations. The importance of the dynamic model was noted when humidity-based experiments were conducted. Inexpensive, multi-wavelength optical characteristics from a single structure, reproducibility, and reversible properties are significant advantages of involving M13 bacteriophage. We believe this work will provide fundamental insight into understanding and interpreting the geometrical and optical properties of the nanostructures involving M13 bacteriophage.

With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen.This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO₂ tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, X-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions were drawn to ascertain the best possible deposition parameters of n-Si for photocatalytic water splitting.

This work is devoted to consideration and analysis of the application of molecular dynamics simulation (MDS) methods to the study of nanosized polymer polyvinylidene fluoride (PVDF) thin ferroelectric films (two-dimensional ferroelectrics) and their composites with graphene layers: 1) to study and calculations of the polarization switching time depending on the electric field and PVDF film thickness; 2) to study and calculations of the polarization switching time depending changes of the PVDF on PVDF-TrFE film; 3) to study the polarization switching time in PVDF under influence of graphene layers. All calculations at each MDS step were carried out using quantum semi-empirical methods PM3. A comparison and analysis of the results of these calculations and the kinetics of polarization switching within the framework of the Landau-Ginzburg-Devonshire theory for homogeneous switching in ferroelectric polymer films is carried out. The study of the composite heterostructures of the “graphene-PVDF” type and calculations of their polarization switching times were presented too. It is shown that replacing PVDF with PVDF-TrFE significantly changes the polarization switching times in these thin polymer films, and that introducing various graphene layers into the PVDF layered structure leads to both an increase and a decrease in the polarization switching time. Here everything also depends on the position and displacement of the ferroelectric coercive field depending on the system damping parameters.

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature grown amorphous Ga2O3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er3+-doped Ga2O3 (Ga2O3: Er) possesses great potential for developing light-emitting devices, photodetectors and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga2O3: Er thin films. Through controlling the growth temperature of Ga2O3: Er films, the upconversion luminescence of as-grown thin films are strongly enhanced over 100 times. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga2O3: Er thin films. These results will aid further design of favorable optoelectronic devices integrated with lanthanide-doped Ga2O3 thin films.

Hf1-xZrxO2 (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films, can be stabilized by doping them with group III elements at low concentrations. While doping with Y improves the ferroelectric properties, there has been limited research on Y-HZO thin films fabricated using atomic layer deposition (ALD). In this study, we investigated the effects of Y doping cycles on the ferroelectric and electrical properties of as-deposited Y-HZO thin films with vaying compositions fabricated through ALD. The Y-HZO thin films were stably crystallized without the need for post-thermal treatment and exhibited transition behavior depending on the Y-doping cycle and initial composition ratio of the HZO thin films. These Y-HZO thin films offer several advantages, including enhanced dielectric constant, leakage current density, and improved endurance. Moreover, the optimized Y-doping cycle induced a phase transformation that resulted in Y-HZO thin films with improved ferroelectric properties, exhibiting stable behavior without fatigue for up to 1010 cycles. These as-deposited Y-HZO thin films show promise for applications in semiconductor devices that require high ferroelectric properties, excellent electrical properties, and reliable performance with a low thermal budget.

In this experimental work, pure nickel oxide and Al-doped NiO thin films have successfully been elaborated onto glass substrates by solar spray pyrolysis technique. The substrates were heated at around 450°C using a solar heater (furnace). The structural, optical and electrical properties of the elaborated Al-doped films have been studied at different atomic percentage ratios (0, 0.5, 1, 1.5 and 2 at. %). The results of Al-doped NiO films XRD patterns were, the formation of (NiO) phase under a cubic crystalline structure (polycrystalline) with a strong favored orientation along (111) plane were noticed at all sprayed films. When Al doping ratio reaches 1 at.%, an growth in crystallite size over 31.9 nm was obtained denoting the nano-structure of the product, which confirmed by SEM images. In addition, aluminum oxide Al₂O₃ was clearly observed at 1.5 at.% Al ratio. Otherwise, all thin films have a good optical transmission in the visible region of about 65%, the optical band gap energy decreased from 3.69 to 3.64 eV with increasing Al doping ratio. It is shown that the layer deposited with 0.5 at.% has less disorder with few defects. The investigation on electrical properties of elaborated thin films confirmed that the conductivity of NiO films was improved, after doping them with Al which affirms their p-type character of semiconductor. However, an addition of an excessive quantity of Al content causes the formation of Al₂O₃ which leads to a decrease in the conductivity. It is worth mentioning that the Al content of 0.5 at.% is the optimum ratio in terms of electrical conductivity and formation defect. Al-doped NiO can be used in various optoelectronic devices due to its good transparency and high electrical conductivity.

The use of nanoparticles as antimicrobial agents can be one of the strategies to overcome the tendency of microbes to become resistant to antibiotics’ action. In this study, two composites ZnO/Au and ZnO/Ag, having 1% wt. of noble metal content, were synthesized by simple aqueous solution methods. The structure and morphology of the resulting nanocomposites were analyzed by standard structural and optical characterization methods. The formation of Au NPs and Ag NPs in these experiments was also discussed. The antimicrobial properties of ZnO, ZnO/Au and ZnO/Ag nanomaterials were investigated against Gram-negative bacteria (Pseudomonas aeruginosa) and Gram-positive bacteria (Staphylococcus aureus). The electrostatic interaction between ZnO and noble metals nanoparticles have contributed to a better visible light adsorption, which led to an enhanced antimicrobial activity. The photocatalytic tests indicated an improvement in photocatalytic degradation of the methylene blue (MB) under UV irradiation using ZnO/Au and ZnO/Ag nanocomposites compared to bare ZnO. The introduction of noble metallic nanoparticles in ZnO matrix proved to be an effective strategy to increase their antimicrobial activity against P. aeruginosa and S. aureus and their photocatalytic activity evaluated through the degradation of MB dye. Comparing the enhancing effects of Au and Ag, it was found that ZnO/Au was a better antimicrobial agent while ZnO/Ag was more effective photocatalyst under UV irradiation.

Recently, cobalt iron boron (CoFeB) thin films have been widely investigated to apply to magnetic sensors, due to their high magnetic moment, anisotropy, and stability. However, most of these studies are conducted on rigid silicon substrates. For more diverse applications of magnetic sensors and angle sensors, it is important to explore the properties of ferromagnetic thin films grown on non-rigid deformable substrates. Here, using representative deformable substrates such as polyimide (PI), polyethylene naphthalate (PEN) and polydimethylsiloxane (PDMS) that can be bent or stretched, we report experimental comparison of in-plane magnetic field angle-dependent properties of the amorphous Ta/CoFeB/MgO/Ta thin film which is grown on those deformable substrates. We investigate effects of substrate roughness, tensile stress, characteristics of deformable substrates, and sputtering process on the change of magnetic properties like coercive field (Hc), remanence over saturation magnetization (Mr/Ms), and their biaxial characteristics. This work presents unconventional foundations for exploring deformable magnetic sensors capable of detecting magnetic field angle.

The Anderson insulating states in Au nanoparticle assembly are identified and studied under the application of magnetic fields and gate voltages. When the inter-nanoparticle tunneling resistance is smaller than the quantum resistance, the system showing zero Mott gap can be insulating at very low temperature. In contrast to Mott insulators, Anderson insulators exhibit great negative magnetoresistance, inferring charge de-localization in a strong magnetic field. When probed by the electrodes spaced by ~200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to interplay of disorder and quantum interference at low temperatures.

This paper investigates an innovative photovoltaic cell configuration, denoted as “Au/CuSCN/RbGeI3/CdTe/ZnO/TiO2/FTO", using SCAPS-1D simulation. The research focuses on optimizing device performance by analyzing key components, including ZnO as the electron transport layer (ETL), RbGeI3 as the perovskite absorber layer, CuSCN as the hole transport layer (HTL), and CdTe as the active buffer layer. A comparison is made with the standard “Au/CuSCN/CH3NH3SnI3/CdTe/ZnO/TiO2/FTO" configuration under dark and illuminated conditions. Through an in-depth investigation involving temperature effects, generation rate analysis, RbGeI3 absorber layer thickness, Nd level, and interface defect levels, an optimized design for a unit area is achieved. The proposed solar cell demonstrates outstanding performance metrics, including an open circuit voltage (Voc) of 0.94V, a short circuit current density (Jsc) of 34.52mA/cm2, a fill factor (FF) of 77.77%, and an energy conversion efficiency (η) of 25.40%. These values significantly outperform the reference models with energy conversion efficiencies of 10.11% and 21.09%. Real-world applicability is validated by implementing these optimized characteristics in a photovoltaic system for Pakistan’s geographical location using PVSyst software. The suggested solar cell achieves a remarkable performance ratio (PR) of 85.6%, surpassing the PR of the reference basic solar cell model at 83%. The findings of this research offer a promising and superior solar cell design, incorporating innovative materials and optimization techniques to achieve exceptional energy conversion efficiency and overall performance. This study’s outcomes have the potential to advance photovoltaic technology and contribute to sustainable energy solutions worldwide.

Influence of water concentration on the properties of fluorine-doped tin oxide (FTO) thin films was systematically studied in this work. Home made SISOM’s SPEED techniques and its chemical formulation was employed to grow the FTO on quartz substrate. Water concentration in the precursor solution was varied from 0, 0.5, 1.0 and 1.5 mol %. The structural, optical, and electrical properties of the films were studied under these deposition conditions. The results show that the properties of the films varied significantly with water concentration. Scanning electron microscopy (SEM) revealed FTO films whose grain size and uniformity increases significantly with increase in water concentration. The structure of the films was measured by X-ray diffraction (XRD) measurement. It shows polycrystalline films with (110), (101), (200), (211) and (220) orientation; the strength increases as water concentration increases. The optical transmission was determined by UV-Vis spectroscopy at 380–780 nm UV-VIS regions. The optical transmittance varies with water concentration with an average of 84%. The electrical property, measured by Hall Effect revealed n-type semiconductor. The films have the following properties: resistivity, 15 × 10^-4Ω cm; carrier concentration, 18.7 × 10¹⁹ cm^-3 and mobility of 21.86 cm² V^-1 s^-1. The average figure of merit, φ of the FTO film is 1.25. Optimum deposition condition was established after series of experiments and was found to be 1.5% water concentration at 460^oC substrate temperature. The FTO films deposited in this work could be a promising replacement to indium tin oxide (ITO) especially in dye-sensitized solar cells.

A novel manufacturing process is presented for producing Nano powders and thin films of CuCoO₂ (CCO) material. This process utilizes three cost-effective synthesis methods: hydrothermal, sol-gel, and solid-state reactions. The resulting delafossite CuCoO₂ samples were deposited onto transparent substrates through spray pyrolysis, forming innovative thin films with a Nano crystal powder structure. Prior to the transformation into thin films, CuCoO₂ powder was first produced using a low-cost approach. The precursors for both powders and thin films were deposited onto glass surfaces using a spray pyrolysis process, and their characteristics were examined through X-ray diffraction, scanning electron microscopy, HR-TEM, UV-visible, and Electrochemical impedance spectroscopy (EIS) analyses was conducted to determine the conductivity in transversal direction of this groundbreaking material for solar cell applications. On the other hand, the sheet resistance of the samples was investigated using the four probe-method to obtain the sheet resistivity and them calculate the in plane conductivity of the samples. We also investigated the aging characteristics of different precursors with varying durations. The functional properties of CuCoO2 samples were explored by studying chelating agent and precursor solution aging periods. Resuming, this study thoroughly discusses the synthesis of delafossite powders and their conversion into thin films, which hold potential as hole transport layers in transparent optoelectronic devices.

This study explored the effects of cryogenic treatment on the microstructure, hardness, and wear-resistance of diamond-like carbon (DLC) by cryogenically treating NAK 80 mold steel coated with DLC. Raman spectroscopy analyzed the structure of the DLC film. Nanoindenter analyzed the hardness and Young’s modulus of the film, and their relationship determined the wear resistance. Wear test assessed the wear rate and friction coefficient of the DLC film. The results showed that cryogenic treatment increased the rate of carbide precipitation and refined the grain structure. Raman spectroscopy indicated that the Raman intensity rate (I_D/I_G) of treated DLC films was smaller than those without cryogenic treatment. When the sp3 bond increased, the hardness and wear-resistance of the DLC film also increased.

: Sputtering of silicon in a Helium magnetron discharge (MS) has been reported as a bottom-up procedure to obtain He-charged silicon films (i.e. He nanobubbles encapsulated in a silicon matrix). The incorporation of heavier noble gases is demonstrated in this work with a synergistic effect producing increased Ne and Ar incorporations when using He-Ne and He-Ar gas mixtures in the MS process. Microstructural and chemical characterizations are reported by ion beam analysis (IBA) and scanning and transmission electron microscopies (SEM and TEM). In addition to gas incorporation, helium promotes the formation of larger nanobubbles. For the case of Ne high resolution X-ray photoelectron and absorption spectroscopies (XPS and XAS) are reported with remarkable dependence of the Ne 1s photoemission and the Ne K-edge absorption on the nanobubbles size and composition. The gas (He, Ne, Ar) charged thin films are proposed as “solid” targets for the characterization of spectroscopic properties of noble gases in a confined state without the need for cryogenics or high-pressure anvils devices. Also their use as targets for nuclear reaction studies is foreseen.

Thin films (100-400 nm) of Ba_xSr_1-xTiO₃ (0≤x≤1) deposited in RF-magnetron co-sputtering equipment are presented in this research work. The change of deposition rate, gap energy, and resistivity as a function of temperature- applied power change in the growth parameters was studied through the ISO colour-code lines constructed with MATLAB: By analysing the trend information and take into account the influence of the calculated "x" parameter with the Boltzmann profile fitting is proposed a method to allow a controlled set up of the RF-magnetron co-sputtering system and predict the E_g and resistivity values in the Ba_xSr_1-xTiO₃ solid solution with 0≤x≤1 for amorphous and crystalline phases. Also, a versatile tool to optimise the deposition process and material properties.

Regenerated silk (RS) is a protein-based “biopolymer” that enables the design of new materials; here, we called “bionic” the process of regenerated silk production by a fermentation-assisted method. Based on yeast’s fermentation, here we produced a living hybrid composite made of regenerated silk nanofibrils and a single-cell fungi, the Saccharomyces cerevisiae yeast extract, by fermentation of such microorganisms at room temperature in a dissolution bath of silkworm silk fibers. The fermentation-based processing enhances the beta-sheet content of the RS, corresponding to a reduction in water permeability and CO₂ diffusion through RS/yeast thin films enabling the fabrication of a mechanically robust film that enhances food storage durability. Finally, a transfer print method, which consists of transferring RS and RS/yeast film layers onto a self-adherent paraffin substrate, was used for the realization of heat-responsive wrinkles by exploiting the high thermal expansion of the paraffin substrate that regulates the applied strain, resulting in a switchable coating morphology from the wrinkle-free state to a wrinkled state if the food temperature overcomes a designed threshold. We envision that such efficient and smart coatings can be applied for the realization of smart packaging that, through such a temperature-sensing mechanism, can be used to control food storage conditions.

Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of a thin aluminum nitride (AlN) buffer layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, the SiC films were also grown on Si substrates. Comparisons of the structural and chemical properties of SiC thin films grown on the two types of substrates allowed us to evaluate the influence of AlN buffer layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of HiPIMS technique to produce polycrystalline SiC thin films at near room temperature only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with a good structural quality using AlN buffer layer.

The aim of this study was to investigate the physicochemical characterization and biological activities of chitosan (CH) based composite films with the incorporation of chestnut flower essential oil (CFEO). The composite films were prepared by casting method and characterized in terms of structural, morphological and mechanical properties via FT-IR, XRD, UV, SEM and TGA. The results proved the significantly increased water vapor permeability (WVP), heat resistance, antibacterial and antioxidant capabilities of CH-CFEO films. The incorporation of CH and CFEO enhanced the UV blocking, which made the film shield almost all UV light. Films with the tensile strength of 6.37 ± 0.41 MPa and elongation at break of 22.57 ± 0.35% were got with 6 mg mL-1 CFEO. Subsequently, the fruit preservation experiments also confirmed that the composite films could effectively extend the shelf life of bananas through their excellent water vapor and oxygen barrier. These desirable performances enable our newly developed composite films to be a remarkable packaging material to solve the fresh fruit preservation dilemma.

In this work, the solar light-induced redox photoactivity of the ZnO semiconductor material was used to prepare at room temperature CuxO-ZnO composite catalysts with a control of the chemical state of the copper oxide phase. The preparation of Cu2(I)O-ZnO and Cu(II)O-ZnO composite catalysts was achieved by using Cu(acac)2 in THF-water and Cu(NO3)2 in water as metallic precursor, respectively. Prior to the implementation of the photo-assisted synthesis method, the most efficient photoactive ZnO material was selected among different ZnO materials prepared by the low temperature polyol method and through the precipitation method with carbonates and carbamates as precipitation agent, by taking the photocatalytic degradation of the 4-chlorophenol compound in water under simulated solar light as model reaction. The ZnO support materials were characterized by XRD, BET, TGA, SEM and TEM, and the synthesis method was strongly influencing their photoactivity in terms of 4-chlorophenol degradation and of total organic carbon removal. The most photoactive ZnO material was prepared by precipitation with carbonates and calcined at 300°C, and was taking advantage of a high specific surface area and a small mean crystallite size for achieving a complete 4-chlorophenol mineralization within 70 min of reaction, with a minimum Zn2+ released to the solution due to surface photocorrosion. Beside thermal catalysis applications, this work opened a new route for the facile synthesis of Cu2O-ZnO heterojunction photocatalysts, that could take advantage under solar light of the heterojunction built between the p-type semi-conductor Cu2O with direct visible light band gap and the ZnO semiconductor phase.

In a previous paper, we solved the partial differential equation of Mullins problem in the case of the evaporation-condensation in electronic devices and gave an exact solution relative to the geometric profile of the grain boundary grooving when materials are submitted to thermal and mechanical solicitation and fatigue effect. In this new research, new modelling of the grain groove profile was proposed and new analytical expressions of the groove profile, the derivative and the groove depth were obtained in the case of diffusion in thin polycrystalline films by the resolution of the fourth differential equation formulated by Mullins that supposed 〖y'〗^2≪1. The obtained analytical solution gave more accurate information on the geometric characteristics of the groove that were necessary to study the depth and the width of the groove. These new findings will open a new way to study with more accuracy the problem of the evaporation-condensation combined to the diffusion phenomenon on the material surfaces with the help of the analytical solutions.

Copper nitride (Cu3N), a metastable semiconductor material, but with reasonably-high-stability at room temperature, is drawing a great deal of attention as a very promising next-generation, earth-abundant, thin-film solar absorber. Its non-toxicity, on the other hand, makes it a very attractive eco-friendly semiconducting material. In the present work, Cu3N thin films were grown by employing radio-frequency magnetron sputtering, at room temperature, with 50-W RF-power, and partial nitrogen pressures of 8.0 and 1.0, onto glass substrates. Thus, the influence of argon on the optical properties of the Cu3N thin films was studied, with the goal of being able to achieve a low-cost, light absorber material, with appropriate properties in order to substitute the more conventional silicon, in photovoltaic cells. Variable-angle spectroscopic ellipsometry measurements have been conducted at three angles, 50∘, 60∘, and 70∘, respectively, in order to obtain the two ellipsometric parameters psi, ψ, and delta, Δ, respectively. For the constructed optical model, the bulk planar Cu3N layer is described by a one-dimensional graded-index model, combine with the mixture of a Tauc-Lorentz oscillator and up to four Gaussian oscillators, whereas a BEMA model with 50%-air-void is adopted in order to account for the existing surface-roughness layer. In addition, the optical properties such as the energy-band gap, and refractive index and absorption coefficient, were determined in order to assess the actual capability of this material as a light absorber for solar cells. The direct and indirect band gap energies were accurately calculated, and they were found to be in the ranges of 2.14-2.21 eV and very clse to 1.50 eV, respectively.

The development and qualification of CrAlN coatings deposited by DC magnetron sputtering offer new industrial solutions to increase the lifecycle of material forming tools (machining and shaping). This study focuses on the selection and optimization of deposition modes for CrAlN layers to be deposited on a 90CrMoV8 tool steel substrate. The adopted methodology aims to optimize the deposition conditions to meet the customer's requirement of a CrAlN coating thickness of approximately 2-3 µm for use in a hot forming process. Different polarizations using two Al and Cr targets, with both stationary and rotating substrate modes during deposition, were tested and evaluated. Characterizations of the CrAlN coating layers (microhardness, residual stress, structures) and performance in service (wear, friction, adhesion, corrosion) were chosen as selection criteria for a particular coating mode. The aluminum content plays a crucial role in the tribological and mechanical behavior of CrAlN layers. Corrosion resistance is more sensitive to the aluminum content for the stationary deposition mode. As a result, the rotating mode provides higher adhesion (+100%) and less wear (-60%) compared to the stationary mode. Therefore, depending on the likely performance in service, either a stationary or rotating mode could be applied for coating the functional surfaces of hot forming tools.

Low-temperature processed ITO thin films offer the potential of overcoming the doping limit by suppressing the equilibrium of compensating oxygen interstitial defects. To elucidate this potential, electrical properties of Sn-doped In₂O₃ (ITO) thin films are studied in dependence on film thickness. In-operando conductivity and Hall effect measurements during annealing of room temperature deposited films with different film thickness in different environments allow to discriminate between the effects of crystallization, grain growth, donor activation and oxygen diffusion on carrier concentrations and mobilities. At 200 °C, a control of carrier concentration by oxygen incorporation or extraction is only possible for very thin films. The electrical properties of thicker films deposited at room temperature are mostly affected by grain size. The remaining diffusivity of compensating oxygen defects at 200 °C is sufficient to screen the high Fermi level induced by deposition of Al₂O₃ using atomic layer deposition (ALD), which disables the use of defect modulation doping at this temperature. The results indicate that achieving higher carrier concentrations requires a control of the oxygen pressure during deposition in combination with seed layers to enhance crystallinity or the use of near room temperature ALD.

In permafrost regions, ground surface deformations induced by freezing and thawing threaten the integrity of the built environment. Mapping the frost susceptibility of the ground at a high spatial resolution is of practical importance for the construction and planning sectors. We processed Sentinel-1 Interferometric Synthetic Aperture Radar (InSAR) data from thawing seasons 2015 to 2019, acquired over the area of Ilulissat, West Greenland. We used a least-squares inversion scheme to retrieve the average seasonal displacement (S) and long-term deformation rate (R). We secondly investigated two different methods to extrapolate active layer thickness (ALT) measurements, based on their statistical relationship with remotely-sensed surface characteristics. A Generalized Linear Model (GLM) was first implemented, but the model was not able to fit the data and represent the ALT spatial variability over the entire study domain. ALT were alternatively averaged per vegetation class, using a land cover map derived by supervised classification of Sentinel-2 images. We finally estimated the active layer ice content and used it as a proxy to map the frost susceptibility of the ground at the community scale. Fine-grained sedimentary basins in Ilulissat were typically frost susceptible and subject to average seasonal downward displacements of 3 to 8 cm. Areas following a subsiding trend of up to 2.6 cm/yr were likely affected by permafrost degradation and melting of ground ice below the permafrost table. Our approach enabled us to identify frost-susceptible areas subject to severe seasonal deformations, and/or long-term subsidence induced by degrading permafrost. Used in combination with traditional site investigations, InSAR maps provide valuable information for risk management and community planning in the Arctic.

Nanopowders are continuously under investigation as they open new perspectives in numerous fields. There are two main challenges to stimulate their development: sufficient low-cost high throughput synthesis methods leading to a production with well-defined and reproducible properties, and for ceramics, conservation of their nanostructure after sintering. In this context, this paper presents the synthesis of a pure nanosized powder of ZnO (dv₅₀ ~ 60 nm, easily redispersable) by using a continuous Segmented Flow Tubular Reactor (SFTR), which has previously shown its versatility and its robustness, ensuring a high powder quality and reproducibility over time. A higher scale of production can be achieved based on a “scale-out” concept by replicating the tubular reactors. The sinterability of ZnO nanopowders synthesized by the SFTR was studied, by natural sintering at 900 °C and 1100 °C, and Spark Plasma Sintering (SPS) at 900 °C. The performances of the synthesized nanopowder were compared to a commercial ZnO nanopowder of high quality. The samples obtained from the synthesized nanopowder could not be densified at low temperature by traditional sintering, whereas SPS led to a fully dense material after only 5 minutes at 900 °C, while limiting the grain growth and thus leading to a nanostructured material.

: The crystallization conditions from the solution play an important role in determining the mor-phology, phase composition, and photovoltaic properties of perovskite films. Post-processing of the obtained films can have a crucial role in increasing the grain size of perovskite and enhancing its crystallinity. It has been shown that the formation of crystal nuclei can be utilized to accelerate crystallization. In this case, crystallization occurs through the growth of seed crystals created in the solution, enabling the formation of relatively large crystals. For the deposition of CH3NH3PbI3 hybrid halide perovskite films from a solution of the perovskite in dimethylformamide the spin coating technique was employed. Pre-crystallization was achieved by annealing the films at a temperature of 100 or 110 °C. The dissolution process involved adding a drop of dimethylformamide onto the substrate surface and allowing it to partially dissolve the perovskite film. Subsequently, residual solvent was removed through spin coating. The mor-phological analysis of the perovskite film surface after recrystallization at temperatures ranging from 80 to 130 °C was performed. The infrared transmission spectra of the obtained perovskite films were investigated, and their light absorption characteristics were studied through transmission spectra. The perovskite structure in the obtained films was confirmed by the peaks observed in the X-ray diffraction patterns.

Giant unilamellar vesicles (GUVs) are membrane model used to study membrane properties. Electroformation is one of the methods used to produce GUVs. During electroformation protocol dry lipid film is formed. Drying of the lipid film induce Cholesterol (Chol) demixing artifact, in which Chol forms anhydrous crystals, where these crystals does not participate in formation of vesicles. This leads to a lower Chol concentration in the vesicle bilayers compared to the Chol concentration in the initial lipid solution. To address this problem, we propose novel electroformation protocol that includes rapid solvent exchange, plasma cleaning and spin-coating methods to produce GUVs. We tested the protocol focusing on vesicles with high Chol content using different spin-coating durations and vesicle types deposition. Additionally, we compared the novel protocol using completely dry lipid film. The optimal spin-coating duration for vesicles made out of phosphatidylcholine/Chol mixture was 30 s. Mulitlamellar vesicles (MLVs), large unilamellar vesicles (LUVs) obtained by extrusion of MLVs through 100 nm membrane pores and LUVs obtained by extrusion of previously obtained LUVs through 50 nm membrane pores were deposited on electrode for 1.5/1 Chol/phosphatidylcholine lipid mixture and the results were compared. Electroformation using all three deposited vesicle types gave a high GUVs yield, but deposition of LUVs obtained by extrusion of MLVs through 100 nm membrane pores gave the most reproducible results. Using deposition of these LUVs, we produced GUVs with high yield for 6 different Chol concentrations (from 0 % to 71.4%). Using protocol that includes dry lipid film GUVs yield was lower and Chol demixing artifact was induced, proving that the lipid film should never undergo drying when Chol content is high.

Magneto-optic (MO) imaging and sensing are at present the most developed practical applications of thin-film MO garnet materials. However, future component and system-level sensors and imagers technology improvements are still necessary in order to improve sensitivity for a range of established and also the forward-looking applications. These improvements are expected to originate from new material system development. We propose a set of technological modifications for the RF-magnetron sputtering deposition and crystallization annealing of magneto-optic bismuth-substituted iron-garnet films and investigate the improved material properties. Results show that standard crystallization annealing for the as-deposited ultrathin (sputtered 10 nm thick, amorphous phase) films resulted in more than a factor of two loss in the magneto-optical activity of the films in visible spectral region, compared to the liquid-phase grown epitaxial films. Results also show that an additional 10 nm-thick metal-oxide (Bi2O3) protective layer above the amorphous film results in ~2.7 times increase in the magneto-optical quality of crystallized iron-garnet films. On the other hand, the effects of post-deposition oxygen (O2) plasma treatment on the magneto-optical (MO) properties of Bismuth substituted iron garnet thin films material is investigated. Results show that, in the visible part of the electromagnetic spectrum (at 532 nm), the O2 treated (up to 3 minutes) garnet films retain higher specific Faraday rotation and figure of merit than those of non-treated garnet films.

In this study, an alternative method to conventional production methods involving thin section copper permanent mould casting (rapid solidification), hot rolling and heat treatment processes to manufacture AISI DC 53 cold work tool steel, has been investigated. In this new method, solidification of the AISI DC 53 was done in the thin section copper mould instead of traditional ingot casting. After solidification, thin slabs obtained was homogenized to 1150 ^oC and hold at this temperature for one hour and then hot rolling was be applied. During hot rolling process, about % 30 reduction in thickness of slab was obtained. After hot rolling, heat treatment (austenitizing, quenching and tempering) have been applied to thin slab. The samples have been taken as cast, as rolled and as heat treated (austenitized and tempered) and the microstructural analysis, hardness tests, retained austenite quantity measurement by XRD method have been performed. The heat treatment and tests have been performed for a commercially available AISI DC 53 which is manufactured by thick section ingot casting and rolling. Hardness values of the AISI DC 53 steels produced by traditional route is in the range of 52-54 HRC after austenitization at 1025 ^oC for one hour and quenched in compressed air and tempered twice at 525 ^oC for 120 mins. On contrary the permanent mould cast AISI DC 53 after homogenization at 1150 ^oC and immediately hot rolling then air cooling and austenitized at 1025 ^oC for one hour then quenched by compressed air and tempered twice at 525 ^oC for 120 mins have hardness valeus in the range of 55-57 HRC. Experiments have revealed that the properties of new rapid solidified steel in permanent copper mould are better than the commercially available steel and have a more refined microstructure than commercially produces alternative. Therefore, the new proposed method can be used as an alternative manufacturing method for cold-work tool steels.

In this work epitaxial Au islands have been grown on epitaxial α-Fe2O3 thin film by pulsed laser deposition on SrTiO3(111) substrate. Both Au and α-Fe2O3 layer show an island-type growth with an average particle size of 40 and 62 nm, respectively. The crystallographic coupling of lattices is confirmed with a rotation of 30º between the in-plane crystallographic axes of α-Fe2O3(0001) structure and those of SrTiO3(111) substrate and between the in-plane crystallographic axes of Au(111) and those of α-Fe2O3(0001) structure. α-Fe2O3 is the only phase of iron oxide identified before and after its functionalization with Au nanoparticles. In addition, its structural character-istics are also preserved after Au deposition, with minor changes at short-range order. The func-tional character of the complex systems as gas sensor has been proven at room temperature. Con-ductance measurements of Au(111)/α-Fe2O3(0001)/ SrTiO3(111) system show that the incorpora-tion of Au islands on top of the α-Fe2O3(0001) layer induces an enhancement of the gas-sensing ac-tivity for CO and CH4 gas in comparison to a bare α-Fe2O3(0001) layer grown on SrTiO3(111).

Stabilized un-doped Zinc Telluride (ZnTe) thin films were grown on glass substrates under vacuum using closed space sublimation (CSS) technique. A dilute copper nitrate solution (0.1/100 ml) was prepared for copper doping known as ion exchange process in the matrix of ZnTe thin film. The reproducible polycrystalline cubic structure of undoped and Cu doped ZnTe thin films with preferred orientation (111) was confirmed by X-rays diffraction (XRD) technique. Lattice parameter analyses verified the expansion of unit cell volume after incorporation of Cu species into ZnTe thin films samples. The micrographs of scanning electron microscopy (SEM) were used to measure the variation in crystal sizes of samples. The energy dispersive X-rays was used to validate the elemental composition of undoped and Cu-doped ZnTe thin films. The bandgap energy 2.24 eV of ZnTe thin film decreased after doping Cu to 2.20 eV may be due to the introduction of acceptors states near to valance band. Optical studies showed that refractive index was measured from 2.18 to 3.24 whereas thicknesses varied between 220 nm to 320 nm for un-doped and Cu doped ZnTe thin film respectively using Swanepoel model. The oxidation states of Zn⁺², Te⁺² and Cu⁺¹ through high resolution X-ray photoelectron spectroscopy (XPS) analyses was observed. The resistivity of thin films changed from ~10⁷ Ω-cm for undoped ZnTe to ~1 Ω-cm for Cu-doped ZnTe thin film, whereas p-type carrier concentration increased from to respectively. These results predicted that Cu-doped ZnTe thin film can be used as an ideal, efficient and stable intermediate layer between metallic and absorber back contact for the heterojunction thin film solar cell technology.

In this study, a new type of temperature sensor device was developed. The circular electrode of the thermal sensitive sensor was modified with TMT and O₂ plasma to enhance the conductivity by forming a thin SnOxCy layer on the electrode surface. The Nano-Au particles were subjected to O₂ plasma pretreatment to form peroxide groups on the surface. The thermally sensitive sensor was made by mixing the above-treated Nano-Au particles with N-isopropylacrylamide (NIPAAm) to form solution and then UV-induced grafting polymerization of the NIPAAm-containing solution onto the electrode substrate. The composite hydrogels on the electrode introduce thermo-sensitive polymeric surface films for temperature sensing. Using ambient environment resistance test to measure the resistance, the LCST (lower critical solution temperature) of Nano-Au (MUA) mixed with NIPAAm hydrogel was found to be 32 °C. At ambient temperatures higher than LCST, the electrode resistance decreases linearly.

ZnO has many technological applications which largely depend on its properties that can be tuned by controlled synthesis. Ideally, the most convenient ZnO synthesis is carried out at room temperature in aqueous solvent. However, the correct temperature values are often loosely defined. In the current paper we performed synthesis of ZnO in aqueous solvent, by varying reaction and drying temperature by 10°C steps and monitored the synthesis products primarily by XRD. We found out that a simple direct synthesis of ZnO, without additional surfactant, pumping of freezing, required both a reaction (TP) and a drying (TD) temperature of 40°C. Higher temperatures also afford ZnO, but lowering any of the TP or TD below the threshold value results either in the achievement of Zn(OH)2 or in a mixture of Zn(OH)2/ZnO. A more detailed Rietveld analysis of the ZnO samples reveals a density variation with the synthesis temperature and an increase of the nanoparticles average size also verified by SEM images. The optical properties of ZnO obtained by UV-Vis reflectance spectroscopy indicate a red shift of the band gap by ~0.1 eV.

Waterbomb structures are origami-inspired deformable structural components used in new types of robots. They have a unique radially deployable ability that enables robots to better adapt to their environment. In this paper, we propose a series of new waterbomb structures with square, rectangle, and parallelogram base units. Through quasi-static axial and radial compression experiments and numerical simulations, we prove that the parallelogram waterbomb structure has a twist displacement mode along the axial direction. Compared with the square waterbomb structure, the proposed optimal design of the parallelogram waterbomb structure reduces the critical axial buckling load-to-weight ratio by 55.4% and increases the radial stiffness-to-weight ratio by 67.6%. The significant increase in the radial stiffness-to-weight ratio of the waterbomb structure and decrease in the critical axial buckling load-to-weight ratio make the proposed origami pattern attractive for practical robotics applications.

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Buckling defect will appear on the outer surface of the deformed ring during constrained ring rolling (CRR) of aluminum alloy thin wall conical ring with inner high ribs (AATWCRIHR), if the geometrical dimension of the ribs doesn't match the wall thickness. To avoid the buckling defect, a quantitative method for characterizing the degree of the buckling defect is proposed using the area of buckling profile. Then an orthogonal experimental scheme was designed taking the width of the middle rib, thickness of wall, and height of the middle rib as design variables and defining the area of buckling profile as optimization objective. Subsequently, a quadratic polynomial response surface model was established by combining the optimization algorithm with the finite element method (FEM), and the geometrical dimension of the middle ribs of the deformed AATWCRIHR is optimized. Also the optimal parameter combination to minimize the area of buckling profile is obtained and verified using FE simulation. Results show that the AATWCRIHR after optimization doesn’t generate the buckling defect during constrained ring rolling, and it is proved that the quantitative buckling defect representation method and the optimization design method based on the response surface model and the finite element simulation results are feasible for the constrained ring rolling process of the AATWCRIHR.