1993 Volume 101 Issue 1177 Pages 1078-1080
A systematic method of growing rod-like β-Si3N4 single crystals from a melt flux has been developed. β-Si3N4 particles with a diameter of 1-2μm, a length of 10-20μm and a low density of defects were obtained by heating a mixture of α-Si3N4, Y2O3 and SiO2. The residual glassy phase was removed by subsequent acid treatments.