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Enhancing the mechanical strength of β-Ga2O3 with Al alloying

Yuchao Yan, Cheng Li, Ning Xia, Tianqi Deng, Hui Zhang, and Deren Yang
Phys. Rev. Applied 21, 064036 – Published 14 June 2024

Abstract

β-Ga2O3 is a promising ultrawide-bandgap semiconductor material for power electronics and optical applications. However, its low hardness and cleavage nature pose major challenges to crystal growth and processing. In this study, Al alloying is proposed as an effective method to improve the mechanical properties of β-Ga2O3 as seed crystals and substrates. First-principle calculations are employed to assess the alloying-induced evolution of crystal structure and mechanical behavior. Elastic constants, ideal shear strengths, and ideal cleavage strengths are all shown to enhance with increasing Al concentration. Our analysis reveals the possibility of obtaining the mechanically favorable β-Ga2O3 seed crystals and substrates with proper Al alloying, providing theoretical guidance to the development of β-Ga2O3 materials and devices.

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  • Received 30 October 2023
  • Revised 10 April 2024
  • Accepted 22 May 2024

DOI:https://doi.org/10.1103/PhysRevApplied.21.064036

© 2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yuchao Yan1,2, Cheng Li2,3, Ning Xia3, Tianqi Deng1,2,*, Hui Zhang1,2,†, and Deren Yang1,2

  • 1State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
  • 2Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China
  • 3Hangzhou Garen Semiconductor Company Limited, Hangzhou, Zhejiang 311200, China

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Issue

Vol. 21, Iss. 6 — June 2024

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