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Real-time millikelvin thermometry in a semiconductor-qubit architecture
V. Champain, V. Schmitt, B. Bertrand, H. Niebojewski, R. Maurand, X. Jehl, C.B. Winkelmann, S. De Franceschi, and B. Brun
Phys. Rev. Applied 21, 064039 (2024) – Published 17 June 2024
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Boosting fluxons to power ballistic logic using an Aharonov-Casher ring
W. Wustmann and K.D. Osborn
Phys. Rev. Applied 21, 064024 (2024) – Published 11 June 2024
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Zr doping in pulsed-laser-deposited α-Ga2O3 for device applications
S. Vogt, C. Petersen, H. von Wenckstern, M. Grundmann, T. Schultz, and N. Koch
Phys. Rev. Applied 21, 064016 (2024) – Published 7 June 2024
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Designing double isolated bands and subgap states in two-dimensional XPS3 (X = Al,Ga,In,Tl) for achieving bi-anti-ambipolar transport
Jialin Yang, Chuyao Chen, Xuemin Hu, Tingting Guo, Hengze Qu, Zhenhua Wu, Li Tao, and Shengli Zhang
Phys. Rev. Applied 21, 064009 (2024) – Published 5 June 2024
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First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer MoSi2N4 devices
Zhanhai Li, Jianing Han, Shengguo Cao, Zhenhua Zhang, and Xiaoqing Deng
Phys. Rev. Applied 21, 054062 (2024) – Published 30 May 2024
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Field-effect Josephson diode via asymmetric spin-momentum locking states
Pei-Hao Fu, Yong Xu, Shengyuan A. Yang, Ching Hua Lee, Yee Sin Ang, and Jun-Feng Liu
Phys. Rev. Applied 21, 054057 (2024) – Published 29 May 2024
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Ab initio model of carrier transport in diamond
M. G. C. Alasio, M. Zhu, M. Matsubara, M. Goano, and E. Bellotti
Phys. Rev. Applied 21, 054043 (2024) – Published 22 May 2024
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Harnessing the superconducting diode effect through inhomogeneous magnetic fields
Leonardo Rodrigues Cadorim, Edson Sardella, and Clécio C. de Souza Silva
Phys. Rev. Applied 21, 054040 (2024) – Published 21 May 2024
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Editors' Suggestion
Measurement-driven neural-network training for integrated magnetic tunnel junction arrays
William A. Borders, Advait Madhavan, Matthew W. Daniels, Vasileia Georgiou, Martin Lueker-Boden, Tiffany S. Santos, Patrick M. Braganca, Mark D. Stiles, Jabez J. McClelland, and Brian D. Hoskins
Phys. Rev. Applied 21, 054028 (2024) – Published 14 May 2024

Defective devices can severely impact the performance of hardware-based neural networks, in particular resistive crossbar arrays. This study introduces a network training approach that reduces the influence of defective devices, maintaining inference accuracy. The authors demonstrate this approach on a set of dies each containing a crossbar array consisting of 20,000 magnetic tunnel junction devices. They also develop a generalized approach using the statistics of defects and demonstrate similar performance on all dies. These results translate to a manufacturing setting where millions of dies with possible defects are produced, but the performance of even subpar chips can be guaranteed.

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Solid-state electrocaloric cooler controlled by a thermal switch
Pedro M. Resende, Florian Le Goupil, Guillaume Fleury, and Georges Hadziioannou
Phys. Rev. Applied 21, 054021 (2024) – Published 9 May 2024
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Editors' Suggestion
Phonon-limited transport in two-dimensional materials: A unified approach for ab initio mobility and current calculations
Jonathan Backman, Youseung Lee, and Mathieu Luisier
Phys. Rev. Applied 21, 054017 (2024) – Published 8 May 2024

Transition-metal dichalcogenides (TMDCs) are promising building blocks for future electronic circuits, but their performance is often hindered by poorly understood electron-phonon interactions. This study leverages a fresh ab initio approach, combining density-functional theory with the linearized Boltzmann transport equation (LBTE) and nonequilibrium Green’s functions (NEGF), to explore phonon-limited transport in TMDCs. The authors find that LBTE and NEGF return very similar mobility values despite the different approximations upon which they rely, thus paving the way for comprehensive device simulations that include electron-phonon scattering.

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Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs
Shiying Guo, Ying Wang, Hengze Qu, Wenhan Zhou, Yee Sin Ang, Shengli Zhang, and Haibo Zeng
Phys. Rev. Applied 21, 054016 (2024) – Published 7 May 2024
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Extended state reshaping in non-Hermitian topolectrical circuits
Chao Liu, Banxian Ruan, Weipeng Hu, Wei Lin, Xiaoyu Dai, Jien Wu, Leyong Jiang, and Yuanjiang Xiang
Phys. Rev. Applied 21, 054013 (2024) – Published 6 May 2024
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Increase in the signal-to-noise ratio of the beat note between a frequency comb and a continuous-wave laser
Shen Zhang, Qi Shen, Lei Hou, Jian-Yu Guan, Shengkai Liao, Qiang Zhang, and Hai-Feng Jiang
Phys. Rev. Applied 21, 034066 (2024) – Published 29 March 2024
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Probing carrier and phonon transport in semiconductors all at once through frequency-domain photoreflectance
Qichen Song, Sorren Warkander, and Samuel C. Huberman
Phys. Rev. Applied 21, 034044 (2024) – Published 21 March 2024
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Extended states isolated in the band gap in non-Hermitian electrical circuits
Zhenyi Lu, Xiangru Chen, Yejian Hu, Jien Wu, Jiuyang Lu, Xueqin Huang, Weiyin Deng, and Zhengyou Liu
Phys. Rev. Applied 21, 034043 (2024) – Published 21 March 2024
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Electromechanical coupling effect in a ferroelectric hPbO monolayer
Shuoke Xu, Xikui Ma, Kehan Liu, and Mingwen Zhao
Phys. Rev. Applied 21, 034028 (2024) – Published 15 March 2024
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1 citation
Magnetic-field-free nonreciprocal transport in graphene multiterminal Josephson junctions
Fan Zhang, Asmaul Smitha Rashid, Mostafa Tanhayi Ahari, George J. de Coster, Takashi Taniguchi, Kenji Watanabe, Matthew J. Gilbert, Nitin Samarth, and Morteza Kayyalha
Phys. Rev. Applied 21, 034011 (2024) – Published 8 March 2024
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On-demand single-electron source via single-cycle acoustic pulses
Shunsuke Ota, Junliang Wang, Hermann Edlbauer, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Arne Ludwig, Andreas D. Wieck, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera, and Shintaro Takada
Phys. Rev. Applied 21, 024034 (2024) – Published 16 February 2024
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Equivalent-circuit model that quantitatively describes domain-wall conductivity in ferroelectric LiNbO3
Manuel Zahn, Elke Beyreuther, Iuliia Kiseleva, Ahmed Samir Lotfy, Conor J. McCluskey, Jesi R. Maguire, Ahmet Suna, Michael Rüsing, J. Marty Gregg, and Lukas M. Eng
Phys. Rev. Applied 21, 024007 (2024) – Published 5 February 2024
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Stability of ternary interfaces and its effects on ideal switching characteristics in inverted coplanar organic transistors
Keito Murata, Gyo Kitahara, Satoru Inoue, Toshiki Higashino, Satoshi Matsuoka, Shunto Arai, Reiji Kumai, and Tatsuo Hasegawa
Phys. Rev. Applied 21, 024005 (2024) – Published 2 February 2024
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