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Comment on “Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si-Inversion Layers”

V. T. Dolgopolov and A. Gold
Phys. Rev. Lett. 89, 129701 – Published 27 August 2002

Abstract

A Comment on the Letter by V. M. Pudalov et al., Phys. Rev. Lett. 88, 076401 (2002). The authors of the Letter reply.

  • Received 25 February 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.129701

©2002 American Physical Society

Authors & Affiliations

V. T. Dolgopolov1 and A. Gold2

  • 1Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia
  • 2CEMES-CNRS, 29 Rue Jeanne Marvig, 31055, Toulouse, France

Comments & Replies

Pudalov et al. Reply:

V. M. Pudalov, G. Brunthaler, A. Prinz, and G. Bauer
Phys. Rev. Lett. 89, 129702 (2002)

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Original Article

Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si-Inversion Layers

V. M. Pudalov, G. Brunthaler, A. Prinz, and G. Bauer
Phys. Rev. Lett. 88, 076401 (2002)

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Issue

Vol. 89, Iss. 12 — 16 September 2002

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