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Nonexponential Relaxations in a Two-Dimensional Electron System in Silicon

J. Jaroszyński and Dragana Popović
Phys. Rev. Lett. 96, 037403 – Published 25 January 2006

Abstract

The relaxations of conductivity have been studied in a strongly disordered two-dimensional (2D) electron system in Si after excitation far from equilibrium by a rapid change of carrier density ns at low temperatures T. The dramatic and precise dependence of the relaxations on ns and T strongly suggests (a) the transition to a glassy phase as T0, and (b) the Coulomb interactions between 2D electrons play a dominant role in the observed out-of-equilibrium dynamics.

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  • Received 27 September 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.037403

©2006 American Physical Society

Authors & Affiliations

J. Jaroszyński* and Dragana Popović

  • National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA

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Issue

Vol. 96, Iss. 3 — 27 January 2006

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