International Workshop on Reconfigurable Communication-Centric Systems-on-Chip, 2011
This paper describes the protocol, architecture, and implementation details of an {FPGA-based} em... more This paper describes the protocol, architecture, and implementation details of an {FPGA-based} embedded system that is able to remotely reconfigure the {FPGA}, using a {TCP/IP} connection, in a secure way. When considering the security aspects, we imply data confidentiality, explicit key authentication and data origin authentication. Since these aspects are overhead for the main application, the system is to be
Advanced materials (Deerfield Beach, Fla.), Jan 6, 2015
Transistor parameter extraction by the conventional transconductance method can lead to a mobilit... more Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V G range.
We present the design aspects of a Bluetooth controlled universal power plug. The developed power... more We present the design aspects of a Bluetooth controlled universal power plug. The developed power plug can be used in combination with any battery powered equipment in which Bluetooth is available. Depending on the time available for charging, the equipment determines the optimum voltage and maximum current at any time during the charging period. These calculated values are transmitted using
The incorporation of an AlAs/GaAs resonant tunneling structure inside a GaAs p-n junction leads t... more The incorporation of an AlAs/GaAs resonant tunneling structure inside a GaAs p-n junction leads to strong quantum-well electroluminescence originating from electron and hole tunneling into the resonant tunneling structure. A large peak-to-valley ratio of 10:1 in the electroluminescence intensity is achieved at the electron resonance at 4.2 K, which decreases but persists (1.45:1) at room temperature. Resonant tunneling of holes is also apparent from the electroluminescence at low temperature.
A pnp bipolar resonant tunneling transistor is realized using a base consisting of an n-type modu... more A pnp bipolar resonant tunneling transistor is realized using a base consisting of an n-type modulation doped quantum-well layer next to a double-barrier tunneling structure. Electrons are injected from the quantum-well base layer into the tunneling structure, leading to quantum-well light emission when they recombine with holes from the emitter. This optical output, which is modulated by the base voltage, persists in the negative differential resistance region of the current-voltage characteristics where the hole current is in oscillation. This opens possibilities for using this transistor as a high frequency electrooptical heterodyne convertor.
This chapter contains sections titled: IntroductionOrganic RFID TagsTransistor-Level Design with ... more This chapter contains sections titled: IntroductionOrganic RFID TagsTransistor-Level Design with Organic TransistorsConclusionsAcknowledgmentsReferencesIntroductionOrganic RFID TagsTransistor-Level Design with Organic TransistorsConclusionsAcknowledgmentsReferences
Recently, complex circuits of organic thin-film transistors have been shown. The use of complemen... more Recently, complex circuits of organic thin-film transistors have been shown. The use of complementary logic can significantly ease the design of large integrated circuits. However, the performance of complementary logic in organic thin-film technology has not been able to equivale that of unipolar logic, due to the difficulty to densely integrate and simultaneously optimize p-type and n-type transistors on a single substrate. Here, we develop an optimized complementary process for C60 n-type and pentacene p-type transistors, both having bottom-gate bottom-contact geometry. Using this complementary technology, we show ring-oscillators with a stage-delay below 1 μs at a supply-voltage of 20 V.
International Workshop on Reconfigurable Communication-Centric Systems-on-Chip, 2011
This paper describes the protocol, architecture, and implementation details of an {FPGA-based} em... more This paper describes the protocol, architecture, and implementation details of an {FPGA-based} embedded system that is able to remotely reconfigure the {FPGA}, using a {TCP/IP} connection, in a secure way. When considering the security aspects, we imply data confidentiality, explicit key authentication and data origin authentication. Since these aspects are overhead for the main application, the system is to be
Advanced materials (Deerfield Beach, Fla.), Jan 6, 2015
Transistor parameter extraction by the conventional transconductance method can lead to a mobilit... more Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V G range.
We present the design aspects of a Bluetooth controlled universal power plug. The developed power... more We present the design aspects of a Bluetooth controlled universal power plug. The developed power plug can be used in combination with any battery powered equipment in which Bluetooth is available. Depending on the time available for charging, the equipment determines the optimum voltage and maximum current at any time during the charging period. These calculated values are transmitted using
The incorporation of an AlAs/GaAs resonant tunneling structure inside a GaAs p-n junction leads t... more The incorporation of an AlAs/GaAs resonant tunneling structure inside a GaAs p-n junction leads to strong quantum-well electroluminescence originating from electron and hole tunneling into the resonant tunneling structure. A large peak-to-valley ratio of 10:1 in the electroluminescence intensity is achieved at the electron resonance at 4.2 K, which decreases but persists (1.45:1) at room temperature. Resonant tunneling of holes is also apparent from the electroluminescence at low temperature.
A pnp bipolar resonant tunneling transistor is realized using a base consisting of an n-type modu... more A pnp bipolar resonant tunneling transistor is realized using a base consisting of an n-type modulation doped quantum-well layer next to a double-barrier tunneling structure. Electrons are injected from the quantum-well base layer into the tunneling structure, leading to quantum-well light emission when they recombine with holes from the emitter. This optical output, which is modulated by the base voltage, persists in the negative differential resistance region of the current-voltage characteristics where the hole current is in oscillation. This opens possibilities for using this transistor as a high frequency electrooptical heterodyne convertor.
This chapter contains sections titled: IntroductionOrganic RFID TagsTransistor-Level Design with ... more This chapter contains sections titled: IntroductionOrganic RFID TagsTransistor-Level Design with Organic TransistorsConclusionsAcknowledgmentsReferencesIntroductionOrganic RFID TagsTransistor-Level Design with Organic TransistorsConclusionsAcknowledgmentsReferences
Recently, complex circuits of organic thin-film transistors have been shown. The use of complemen... more Recently, complex circuits of organic thin-film transistors have been shown. The use of complementary logic can significantly ease the design of large integrated circuits. However, the performance of complementary logic in organic thin-film technology has not been able to equivale that of unipolar logic, due to the difficulty to densely integrate and simultaneously optimize p-type and n-type transistors on a single substrate. Here, we develop an optimized complementary process for C60 n-type and pentacene p-type transistors, both having bottom-gate bottom-contact geometry. Using this complementary technology, we show ring-oscillators with a stage-delay below 1 μs at a supply-voltage of 20 V.
Uploads