Adelmo Ortiz-Conde

In this work we present the use of the Integral Non-Linearity Function (INLF) to efficiently study the distortion of Double-Gate (DG) MOSFETs. Here we analyze the I D (V D) output characteristics in the Symmetrically Driven Double-Gate (SDDG) and Independently Driven Double-Gate (IDDG) operating modes. The distortion is analyzed on Atlas simulated characteristics of an undoped-body DG MOSFET with front and back gate-oxide thickness of 2 nm and a silicon film thickness of 10 nm. Results show that 1) the Integral Non-Linearity Function (INLF) can be efficiently used to calculate IP2 and IP3, and 2) the HD n /INLF ratio is constant under weakly nonlinear behavior. We present a simple mathematical demonstration that rigorously justifies the obtained results. It is concluded that INLF provides a computationally efficient method to calculate harmonic distortion without using Fourier or any other complex AC analysis.

Resumen: Se presenta una revisión del uso de la función de Lambert en aplicaciones de electrónica. Primeramente se describe brevemente su definición y se mencionan algunas de sus propiedades. Seguidamente se ofrecen ejemplos de cómo aplicar esta función en la solución de algunas ecuaciones transcendentales que involucran exponenciales. Las aplicaciones de esta función a la electrónica se ilustran mediante ejemplos relativos a la solución de problemas de dispositivos bipolares de juntura, modelado de celdas solares bajo iluminación, y modelos de dispositivos MOSFET. Abstract: A revision of the use of Lambert's function in electronics applications is presented. Firstly, its definition is briefly described and some of its properties are mentioned. Next, examples are worked out of how to apply this function to the solution of some transcendental equations which contain exponentials. Applications of this function to electronics are illustrated through examples dealing with the solution of problems such as bipolar junction devices, modelling of illuminated solar cells, and MOSFET device modelling.

Abstract The harmonic distortion introduced by MOS transistors is a property of major importance regarding their analog applications. In recent papers we presented a new integral function method (IFM) to calculate total harmonic distortion (THD) and the third harmonic component (HD3) of MOSFET based on the direct analysis of the non-linearity of the DC I DS-V DS characteristic of the device for a fixed gate voltage. To evaluate this non-linearity, we defined an integral function, which will be called D hereafter, to calculate an ...

This article provides a unified look at MOSFET model parameter extraction methods that rely on the application of successive differential and integral operators, their ratios, and various other combinations thereof. Some of the most representative extraction procedures are assessed by comparatively examining their ability to extract basic model parameters from synthetic MOSFET transfer characteristics, generated by an ad hoc minimalist four-parameter model. The model used, comprised of a single polylogarithm function of gate voltage, approximately describes in a very concise manner the essential features of MOSFET drain current continuously from depletion to strong inversion. The exponential-like low voltage and
monomial-like high voltage asymptotes of this simple model are conveniently used to analyze and compare the different extraction schemes that are founded on successive differentiation or integration. In addition to providing a combined view useful for comparative methodological appraisal, the present unified analysis facilitates visualizing and exploring other potentially promising extraction strategies beyond the straightforward use of successive differential and integral operators and their ratios. We include examples of parameter extraction from measured transfer characteristics of real experimental MOSFETs to comparatively illustrate the actual numerical implementation of typical successive differential and integral operator-based procedures.

—Parasitic series resistances and mobility degradation are limiting the development of advanced MOSFETs. We review, scrutinize, and critically compare five parameter extraction methods that use DC data measured from a single test device. The use of a single device facilitates individual characterization and avoids the impact of device-to-device model parameter variation that affects other common methods that require using measurements from arrays of transistors with several different geometries.

This article reviews and appraises the dc lumped-parameter equivalent circuit models that have been proposed so far for representing some types of solar cells that can exhibit under certain circumstances a detrimental S-shaped concave deformation within the energy-producing fourth quadrant of their illuminated I–V characteristics. We first present a very succinct recollection of lumped-parameter equivalent circuits that are commonly used to model conventional solar cells in general. We then chronologically present and discuss lumped-parameter equivalent sub-circuits that, combined with conventional solar cell equivalent circuits, are used to specifically represent the undesired S-shaped behaviour. The mathematically descriptive equations of each complete equivalent circuit are also examined, and closed form solutions for the terminal current and voltage as explicit functions of each other are presented and discussed whenever available. While comparing the most salient features and explaining the practical advantages and disadvantages of such equivalent circuit models, we offer some comments on possible directions for further improvement.