Boosting performances of triboelectric nanogenerators by optimizing dielectric properties and thickness of electrification layer

Xiaofang Kang; Chongxiang Pan; Yanghui Chen; Xiong Pu

doi:10.1039/d0ra02181d

Boosting performances of triboelectric nanogenerators by optimizing dielectric properties and thickness of electrification layer

RSC Adv. 2020 May 6;10(30):17752-17759. doi: 10.1039/d0ra02181d. eCollection 2020 May 5.

Authors

Xiaofang Kang^{1

2}, Chongxiang Pan^{1

3}, Yanghui Chen^{1

2}, Xiong Pu^{1

2

3}

Affiliations

¹ CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences Beijing 100083 China [email protected].
² School of Nanoscience and Technology, University of Chinese Academy of Sciences Beijing 100049 China.
³ Center on Nanoenergy Researh, School of Chemistry and Chemical Engineering, School of Physical Science and Technology, Guangxi University Nanning 530004 China.

Abstract

Triboelectric nanogenerators (TENGs) with excellent flexibility and high outputs are promising for powering wearable/wireless electronics with electricity converted from ubiquitous mechanical energies in the working environment. In this work, the effects of the dielectric properties and thickness of the electrification film on the performance of the TENG are discussed. BaTiO₃ nanoparticles are added into poly(vinylidene fluoride) (PVDF) to improve the dielectric constant of the composite film. The TENG using a BaTiO₃/PVDF nanocomposite film with 11.25 vol% BaTiO₃ as the tribo-negative electrification layer is demonstrated to be the optimized one, and generates an open-circuit voltage of 131 V and transferred short-circuit charge density of 89 μC m^-2, 6.5 fold higher than those of a TENG using bare a PVDF layer. Furthermore, by reducing the thickness of the BaTiO₃/PVDF film to 5 μm, the voltage and charge density increase to 161 V and 112 μC m^-2, respectively, and an instantaneous peak power density of 225.6 mW m^-2 is obtained.