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Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Black-Si as Photoelectrode

Version 1 : Received: 6 April 2020 / Approved: 10 April 2020 / Online: 10 April 2020 (07:51:31 CEST)

A peer-reviewed article of this Preprint also exists.

Linklater, D.P.; Haydous, F.; Xi, C.; Pergolesi, D.; Hu, J.; Ivanova, E.P.; Juodkazis, S.; Lippert, T.; Juodkazytė, J. Black-Si as a Photoelectrode. Nanomaterials 2020, 10, 873, doi:10.3390/nano10050873. Linklater, D.P.; Haydous, F.; Xi, C.; Pergolesi, D.; Hu, J.; Ivanova, E.P.; Juodkazis, S.; Lippert, T.; Juodkazytė, J. Black-Si as a Photoelectrode. Nanomaterials 2020, 10, 873, doi:10.3390/nano10050873.

Abstract

The fabrication and characterisation of photo-anodes based on black-Si (b-Si) are presented using a photo-electrochemical cell in NaOH solution. Black-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoOx cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity R < % of Black-Si over the entire visible and near-IR (λ < 2 µm) spectral range is favourable in better absorption of light while an increased surface area facilities larger current densities. Photoelectrochemical performance of the heterostructured photoanode is discussed in terms of n-n junction between b-Si and TiO2.

Keywords

black Si; antireflection; photo-anode; water splitting9

Subject

Chemistry and Materials Science, Electrochemistry

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