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Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
Version 1
: Received: 26 December 2020 / Approved: 28 December 2020 / Online: 28 December 2020 (10:40:29 CET)
A peer-reviewed article of this Preprint also exists.
Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials 2021, 14, 354. Schiavon, D.; Litwin-Staszewska, E.; Jakieła, R.; Grzanka, S.; Perlin, P. Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium. Materials 2021, 14, 354.
Abstract
The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
Keywords
Ge; germanium; doping; GaN; gallium; nitride; MOVPE; epitaxy
Subject
Engineering, Electrical and Electronic Engineering
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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