Version 1
: Received: 4 April 2021 / Approved: 5 April 2021 / Online: 5 April 2021 (12:21:57 CEST)
How to cite:
Rashid, H.; Arsad, N.; Ahmad, H.; Bakar, A. A. A.; Reaz, M. I. Fabrication and Characterization of Near Infrared Molybdenum Disulfide/Silicon Heterojunction Photodetector by Drop Casting Method. Preprints2021, 2021040119. https://doi.org/10.20944/preprints202104.0119.v1
Rashid, H.; Arsad, N.; Ahmad, H.; Bakar, A. A. A.; Reaz, M. I. Fabrication and Characterization of Near Infrared Molybdenum Disulfide/Silicon Heterojunction Photodetector by Drop Casting Method. Preprints 2021, 2021040119. https://doi.org/10.20944/preprints202104.0119.v1
Rashid, H.; Arsad, N.; Ahmad, H.; Bakar, A. A. A.; Reaz, M. I. Fabrication and Characterization of Near Infrared Molybdenum Disulfide/Silicon Heterojunction Photodetector by Drop Casting Method. Preprints2021, 2021040119. https://doi.org/10.20944/preprints202104.0119.v1
APA Style
Rashid, H., Arsad, N., Ahmad, H., Bakar, A. A. A., & Reaz, M. I. (2021). Fabrication and Characterization of Near Infrared Molybdenum Disulfide/Silicon Heterojunction Photodetector by Drop Casting Method. Preprints. https://doi.org/10.20944/preprints202104.0119.v1
Chicago/Turabian Style
Rashid, H., Ahmad Ashrif A. Bakar and Mamun Ibne Reaz. 2021 "Fabrication and Characterization of Near Infrared Molybdenum Disulfide/Silicon Heterojunction Photodetector by Drop Casting Method" Preprints. https://doi.org/10.20944/preprints202104.0119.v1
Abstract
In this work, a highly efficient, molybdenum disulfide (MoS2) based near infrared (NIR) heterojunction photodetector is fabricated on a Si substrate using a cost-effective and simple drop casting method. A non-stoichiometric and inhomogeneous MoS2 layer with a S/Mo ratio of 2.02 is detected using energy dispersive X-ray spectroscopy and field emission scanning electron microscope analysis. Raman shifts are noticed at 382.42 cm-1 and 407.97 cm-1, validating MoS2 thin film growth with a direct bandgap of 2.01 eV. The fabricated n-MoS2/p-Si photodetector is illuminated with a 785 nm laser at different intensities, and demonstrate the ability of the photodetector to work in both regions, the forward biased and reverse biased from above 1.5 V and less than -1.0 V. The highest responsivity, R is calculated to be 0.52 A/W while the detectivity D* is 4.08 x 10^10 Jones for an incident light intensity of 9.57 mW/cm2. The minimum rise and fall times are calculated as 1.77 ms and 1.31 ms for an incident laser power of 9.57 mW/cm^2 and 6.99 mW/cm^2 respectively at a direct current bias voltage of 10 V. The demonstrated results are promising for the low-cost fabrication of a thin MoS2 film for photonics and optoelectronic device applications.
Keywords
MoS2; photodetector; Raman; drop casting; infrared; thin film
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.