Schulte, A.; Modak, S.; Landa, Y.; Atman, A.; Li, J.-S.; Chiang, C.-C.; Ren, F.; Pearton, S.J.; Chernyak, L. Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga2O3 p–n Heterojunction. Condens. Matter2023, 8, 106.
Schulte, A.; Modak, S.; Landa, Y.; Atman, A.; Li, J.-S.; Chiang, C.-C.; Ren, F.; Pearton, S.J.; Chernyak, L. Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga2O3 p–n Heterojunction. Condens. Matter 2023, 8, 106.
Schulte, A.; Modak, S.; Landa, Y.; Atman, A.; Li, J.-S.; Chiang, C.-C.; Ren, F.; Pearton, S.J.; Chernyak, L. Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga2O3 p–n Heterojunction. Condens. Matter2023, 8, 106.
Schulte, A.; Modak, S.; Landa, Y.; Atman, A.; Li, J.-S.; Chiang, C.-C.; Ren, F.; Pearton, S.J.; Chernyak, L. Impact of Solid-State Charge Injection on Spectral Photoresponse of NiO/Ga2O3 p–n Heterojunction. Condens. Matter 2023, 8, 106.
Abstract
Forward-bias hole injection from 10 nm-thick p-type Nickel Oxide layers into 10 um-thick n-type Gallium Oxide in a vertical NiO/Ga2O3 p-n heterojunction leads to more than a factor of 2 enhancement of photoresponse measured from this junction. While it takes only 600 seconds to obtain such a pronounced increase in photoresponse, it persists for hours, indicating feasibility of photovoltaic device performance control. The effect is ascribed to charge injection-induced increase of minority carrier (hole) diffusion length (resulting in improved collection of photogenerated non-equilibrium carriers) in n-type beta-Ga2O3 epitaxial layers, due to trapping of injected charge (holes) on deep meta-stable levels in the material and subsequent blocking of non-equilibrium carrier recombination through these levels. Suppressed recombination leads to increased non-equilibrium carrier lifetime, in turn determining a longer diffusion length and being the root-cause for the effect of charge injection.
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