The key question for the understanding of corrosion phenomena of Si3N4-SiC material in Al reduction cell – whether corrosion by gases (and oxidation in particular) opens way for the corrosion by molten cryolite, or corrosion of Si3N4-SiC by cryolite plays its own role in degradation of the material in service. More probably the reactions of silicon carbide and silicon nitride with molten cryolite go after the stage of pre oxidation to silicon dioxide. The corrosion of Si3N4-SiC material in the reduction cell may take place by “gas-solid” reaction and by “liquid-solid” reaction. There are several variants of lab corrosion test for the evaluation of corrosion resistance of Si3N4-SiC material to cryolite. The results of investigation of Si3N4-SiC lab corrosion test give no direct evidence of selective dissolution of specific phase (Si3N4 or SiC, α-Si3N4 or β-Si3N4) in cryolite. The existing variants of lab corrosion testing require clarification.

During the last decades the quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science. Recently, the discovery of a novel class of materials, the topological semimetals, has led to a growing interest for the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure and carrier mobility in recently discovered high carriers mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. The huge magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The design of novel quantum sensors based on solid-state semimetals is also encouraged.

Thermal simulations are an important part in the design of electronic systems, especially as systems with high power density become common. In simulation-based design approaches, a considerable amount of time is spent by repeated simulations. In this work, we present a proof-of-concept study of the application of convolutional neural networks to accelerate those thermal simulations. The goal is not to replace standard simulation tools but to provide a method to quickly select promising samples for more detailed investigations. Based on a training set of randomly generated circuits with corresponding Finite Element solutions, the full 3D steady-state temperature field is estimated using a fully convolutional neural network. A custom network architecture is proposed which captures the long-range correlations present in heat conduction problems. We test the network on a separate dataset and find that the mean relative error is around 2 % and the typical evaluation time is 35 ms per sample ( 2 ms for evaluation, 33 ms for data transfer). The benefit of this neural-network-based approach is that, once training is completed, the network can be applied to any system within the design space spanned by the randomised training dataset (which includes different components, material properties, different positioning of components on a PCB, etc.).

The fabrication of thin-film multilayer structures by sputtering technique usually requires multi-cathode deposition machine. This study proposes a simpler approach based on the RF power modulation: silicon nitride (SiN$_x$) thin films were prepared by RF reactive sputtering in (Ar + N$_2$) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-IR regions. The refractive index of the films was changed in the range of 1.5 - 2.5 (at $\lambda$=800 nm) by tuning the sputtering power. IR reflectance measurements revealed the absence of spurious (oxygen- or hydrogen-based) phases, while atomic force and scanning electron microscopies confirmed the presence of flat and defect-free samples surfaces.

This topical review describes the results of recent research into and development of silicon nitride, a ceramic material with unique properties. The outcome of this ongoing research strongly encourages the use of monolithic silicon nitride and coatings as contemporary and future biomaterial for a variety of medical applications. Crystallographic structure, synthesis and processing of monolithic structures and coatings, and examples of their medical applications are covered that relate to spinal, orthopedic and dental implants, bone grafts and scaffolds, platforms for intelligent synthetic neural circuits, antibacterial and antiviral particles and coatings, optical biosensors, and nano-photonic waveguides for sophisticated medical diagnostic devices. The examples provided show convincingly that silicon nitride is destined to become a leader to replace titanium and other entrenched biomaterials in many fields of medicine.

In-situ grown C_0.3N_0.7Ti and SiC, which derived from non-oxide additives Ti₃SiC₂, are proposed to densify silicon nitride (Si₃N₄) ceramics with enhanced mechanical performance. Remarkable increase of density from 79.20% to 95.48% could be achieved for Si₃N₄ ceramics with 5vol% Ti₃SiC₂. The capillarity of decomposed Si from Ti₃SiC₂, and in-situ reaction between nonstoichiometric TiC_x and Si₃N₄ were believed to be responsible for densification of Si₃N₄ ceramics. An obvious enhancement of flexural strength and fracture toughness for Ti₃SiC₂ doped Si₃N₄ ceramics was observed. The maximum flexural strength of 795 MPa for Si₃N₄ composites with 5vol% Ti₃SiC₂ and maximum fracture toughness of 6.97 MPa^.m^1/2 for Si₃N₄ composites with 20vol% Ti₃SiC₂ are achieved when mixed powders are hot-press sintered at 1700℃. Pull out of elongated Si₃N₄ grains, crack bridging, crack branching and crack deflection were demonstrated to dominate enhance fracture toughness of Si₃N₄ composites.

Keywords: Amorphous-precipitate, Nitride, Morphological stability, Diffusion, Internal stresses, Modelling, Simulation

In this paper, the preparation methods of porous silicon nitride materials with controllable dielectric constant and pore structure were systematically studied. By using microwave sintering technology, porous silicon nitride materials with high closed pore ratio were prepared by adjusting the content of sintering additives and sintering process parameters, and controlling the grain boundary phase and pore structure and size. The effects of sintering conditions on the total porosity, closed porosity, pore structure and dielectric properties of materials were systematically studied.

Optical parametric amplification (OPA) represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media, for generating high-power optical pulses, optical microcombs, entangled photon pairs and a wide range of other applications. Here, we demonstrate optical parametric amplifiers based on silicon nitride (Si₃N₄) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. We achieve precise control over the thickness, length, and position of the GO films using a transfer-free, layer-by-layer coating method combined with accurate window opening in the chip cladding using photolithography. Detailed OPA measurements with a pulsed pump for the fabricated devices with different GO film thicknesses and lengths show a maximum parametric gain of ~24.0 dB, representing a ~12.2 dB improvement relative to the device without GO. We perform a theoretical analysis of the device performance, achieving good agreement with experiment and showing that there is substantial room for further improvement. This work demonstrates a new way of achieving high photonic integrated OPA performance by incorporating 2D materials.

We theoretically investigate and optimize four-wave mixing (FWM) in silicon nitride (SiN) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. Based on extensive previous measurements of the material parameters of the GO films, we perform detailed analysis for the influence of device parameters including waveguide geometry, GO film thickness, length, and coating position on the FWM conversion efficiency (CE) and conversion bandwidth (CB). The influence of dispersion and photo-thermal changes in the GO films is also discussed. Owing to the strong mode overlap between the SiN waveguides and the highly nonlinear GO films, FWM in the hybrid waveguides can be significantly enhanced. We obtain good agreement with previous experimental results and show that by optimizing the device parameters to balance the trade-off between Kerr nonlinearity and loss, the FWM CE can be improved by as much as ~20.7 dB and the FWM CB can be increased by ~4.4 folds, relative to the uncoated waveguides. These results highlight the significantly enhanced FWM performance that can be achieved in SiN waveguides by integrating 2D layered GO films.

Layered 2D graphene oxide (GO) films are integrated with silicon nitride (SiN) waveguides to experimentally demonstrate an enhanced Kerr nonlinearity via four-wave mixing (FWM). Owing to the strong light–matter interaction between the SiN waveguides and the highly nonlinear GO films, the FWM performance of the hybrid waveguides is significantly improved. SiN waveguides with both uniformly coated and patterned GO films are fabricated based on a transfer-free, layer-by-layer GO coating method together with standard photolithography and lift-off processes, yielding precise control of the film thickness, placement and coating length. Detailed FWM measurements are carried out for the fabricated devices with different numbers of GO layers and at different pump powers. By optimizing the trade-off between the nonlinearity and loss, we obtain a significant improvement in the FWM conversion efficiency of ≈7.3 dB for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. We also obtain a significant increase in FWM bandwidth for the patterned devices. A detailed analysis of the influence of pattern length and position on the FWM performance is performed. Based on the FWM measurements, the dependence of GO’s third-order nonlinearity on layer number and pump power is also extracted, revealing interesting physical insights about the 2D layered GO films. Finally, we obtain an enhancement in the effective nonlinear parameter of the hybrid waveguides by over a factor of 100. These results verify the enhanced nonlinear optical performance of SiN waveguides achievable by incorporating 2D layered GO films.

We experimentally demonstrate enhanced self-phase modulation (SPM) in silicon nitride (Si₃N₄) waveguides integrated with 2D graphene oxide (GO) films. GO films are integrated onto Si₃N₄ waveguides using a solution-based, transfer-free coating method that enables precise control of the film thickness. Detailed SPM measurements are carried out using both picosecond and femtosecond optical pulses. Owing to the high Kerr nonlinearity of GO, the hybrid waveguides show significantly improved spectral broadening compared to the uncoated waveguide, achieving a broadening factor of up to ~3.4 for a device with 2 layers of GO. By fitting the experimental results with theory, we obtain an improvement in the waveguide nonlinear parameter by a factor of up to 18.4 and a Kerr coefficient (n₂) of GO that is about 5 orders of magnitude higher than Si₃N₄. Finally, we provide a theoretical analysis for the influence of GO film length, coating position, and its saturable absorption on the SPM performance. These results verify the effectiveness of on-chip integrating 2D GO films to enhance the nonlinear optical performance of Si₃N₄ devices.

A single mode waveguide grating coupler based on multiple Si-SiO₂ pairs onto Si substrate has been designed. Numerical analysis has been carried out to calculate optimum thickness of the layers of Si-SiO₂ that ensures the constructive interference between reflected waves and actual guided wave for high coupling efficiency. Based on the results, an optimal design is developed and modeled by using a 2-D finite difference time domain (2-D FDTD) simulator that dictates a coupling efficiency of as much as 78% (-1.07 dB) at the wavelength of 1550 nm, and a 1-dB bandwidth of 77 nm. The numerical method will be useful to calculate the optimum thicknesses of the layers for any reflector based grating coupler of different materials.

We demonstrate hybrid integration of a lithium niobate microring resonator with a silicon nitride waveguide in the vertical configuration to achieve efficient light coupling. The microring resonator is fabricated on a lithium niobate on insulator (LNOI) substrate using photolithography assisted chemo-mechanical etching (PLACE). A fused silica cladding layer is deposited on the LNOI ring resonator. The silicon nitride waveguide is further produced on the fused silica cladding layer by first fabricating a trench in the fused silica using focused ion beam (FIB) etching for facilitating the evanescent coupling, followed by formation of the silicon nitride waveguide on the bottom of the trench. The FIB etching ensures the required high positioning accuracy between the waveguide and the ring resonator. We achieve Q-factors as high as 1.4*10^7 with the vertically integrated device.

In the recent years, tubular nanostructures have been related with immense advances in various fields of science and technology. Considerable research efforts have been centered on the theoretical prediction and manufacturing of non-carbon nanotubes (NTs), which meet modern requirements for the developing of novel devices and systems. In this context, diatomic inorganic nanotubes formed by atoms of elements from the 13th group of the periodic table (B, Al, Ga, In, Tl) and nitrogen (N), have received much research attention. In the present work, the elastic properties of single-walled boron nitride, aluminium nitride, gallium nitride, indium nitride and thallium nitride nanotubes were numerically evaluated using the nanoscale continuum modelling approach (also called molecular structural mechanics). The elastic properties (rigidities, surface Young´s and shear moduli, and Poisson´s ratio) of nitride nanotubes are discussed with respect to the bond length of the corresponding diatomic hexagonal lattice. The results obtained contribute to a better understanding of the mechanical response of nitride compound-based nanotubes, covering a broad range from the well-studied boron nitride NTs to the hypothetical thallium nitride NTs.

We report on a new form of nanoscale carbon nitride in the shape of single layer half dome structures grown on the step edges of boron nitride sheets. The half dome structure grown on the step edges of boron nitride sheets. The half dome structures are formed spontaneously at high temperature using Iron oxide nanoparticles capped with tetremethylammonium hydroxide supported on BN sheets. During the combustion process the support, firstly, acted as a reducing agent, secondly, as a source of nitrogen that permitted the transformation of the organic capping agent in sp1 CN chains linked with sp2 CN domains. During the Ostwald ripening process smaller nanoparticles migrates towards bigger nanoparticles, when the nanoparticles come across the step edges of few layer boron nitride sheets the half dome structure is formed. This new method of synthesis has demonstrated for the first time the formation of half dome structures containing cyanopolyynes sp1 chains and sp2 carbon nitride domains.

In this work, the analytical Lagrange-Kirchhoff model for the deformation for a taiko plate silicon is proposed. Under the conditions of validity of the linear theory of thin plates, the model is in agreement with the experimental data.

The need for integrated high-frequency systems has increased significantly, leading to the development of efficient antennas operating in the 0.1-10 terahertz (THz) range. Using graphene as the conducting 2D material and hexagonal boron nitride (hBN) as the dielectric substrate, this research effort examines the design and performance evaluation of a THz band antenna functioning on supporting nanotechnology. The researchers contrasted the system’s performance with the 6G wireless network requirements after analyzing the antenna performance, radiation patterns, and impedance matching. According to this research, graphene, along with hBN can enhance antenna performance overall in the THz band and open pathways for advanced communication. The application of the designed antenna in a 6G wireless network will be tested through um MIMO configuration to achieve a higher data rate.

A major problem of the technological production process of the metallurgical-grade silicon is formation of a large amount of microsilica. However, this material can be a significant source of raw materials for its own production. Hence, this study is aimed to solve the problem of micro-silica utilization, i.e. the technogenic dust-like waste generated during the melting of the technical-grade silicon. Within this study, the technology of the joint briquetting of microsilica was investigated with the carbonaceous reducing agents, i.e. by obtaining of mono-charge and by melting of the technical-grade silicon from the obtained mono-charge in the 200kVA ore-thermal furnace. Results of the study show that the briquettes in the melting process of the technical-grade silicon can be used in the range from 0 to 50%. The using of briquettes may significantly improve the technological parameters. When briquetted charge is applied only, the technological parameters will deteriorate significantly. The material balance of silicon melting showed the recovery rates of the main elements (Si, Al, Ca and Fe). It recorded a decrease in content of aluminum from 1.9-2.1% to 0.5-0.7%, calcium from 0.2-0.3% to 0.07-0.1% and titanium from 0.2-0.23% to 0.11-0.13% during the transition to briquetted monocharge. Phosphorus content increased from 0.004-0.005 to 0.011-0.013%.

The microstructure of the substrate plays a crucial role in the anodizing process. Anodizing cast aluminum alloys is quite challenging due to the higher levels of alloying elements present compared to pure aluminum. Elements such as silicon, iron, and copper significantly impact the growth and quality of the anodic layer. Additionally, anodizing parameters such as electrolyte composition, current density, and temperature are critical in determining the morphology and thickness of the anodic film. The casting process, surface condition, and post-treatment also affect the properties of the anodic layer. Optimizing these parameters is essential to achieve a durable and high-quality anodic layer. This work aims to provide a comprehensive understanding of the various factors affecting the anodizing of cast aluminum alloys and the properties of the anodic layer, including its thickness, corrosion resistance, and wear resistance.

Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with its varied application in solar cells as a transparent front contact, intermediate reflector, back reflector layer and even tunnel layer for passivating contacts, owing to easy tailoring of its optical properties. In this work, we systematically investigate the influence of gas mixture (SiH4, CO2, PH3 and H2), RF power and process pressure on the optical, structural and passivation properties of thin n-type nc-SiOx:H films prepared in an industrial, high throughput, plasma-enhanced chemical vapor deposition (PECVD) reactor. We provide a detailed description of the n-type nc-SiOx:H material develop-ment using various characterization techniques (SEM, EDX, Raman spectroscopy, and spectro-scopic ellipsometry) with a focus on the relationship between the material properties and the pas-sivation they provide to n-type c-Si wafers characterized by their effective carrier lifetime (τeff). Further, we also outline the parameters to be kept in mind while developing different n-type nc-SiOx:H layers for different solar cell applications. We report a tunable optical gap (1.8 – 2.3 eV) for our n-type nc-SiOx:H films as well as excellent passivation properties with τeff up to 3.5 ms (iVoc ~ 715 mV) before annealing. Oxygen content plays an important role in determining the crystallinity and hence passivation quality of the deposited nanocrystalline silicon oxide films.

The optoelectronic properties of free standing monolayer (ML) hexagonal boron nitride (h-BN) is investigated for potential solar energy conversion applications using the Density Functional Theory (DFT) full potential linearized augmented plane wave (FP-LAPW) method. In addition, the bulk optical properties have also been calculated for the sake of comparison. The dielectric functions, optical conductivities and the optical constants are evaluated using the relaxed structures from electronic total energy pseudopotential calculations. The results reinforce previous research on h-BN DUV optoelectronics and demonstrate the suitability of its use as a component in deep ultraviolet (DUV) and energy conversion devices.

Nanoporous membranes promise energy-efficient water desalination. Hexagonal boron nitride (h-BN), like graphene, exhibits outstanding physical and chemical properties, making it a promising candidate for water treatment. We employed Car–Parrinello molecular dynamics simulations to establish accurate modeling of Na+ and Cl- permeation through hydrogen passivated nanopores in graphene and h-BN membranes. In these complex systems the classical potentials cannot properly account for the physics at play. We demonstrate that ion separation works well for the h-BN by imposing a barrier of 0.13 eV and 0.24 eV for Na+ and Cl- permeation respectively, compared to the graphene where the Cl- ion faces a negative barrier of 0.68 eV and is prone toward blockade and Na+ permeation is associated with a slightly negative barrier of 0.03 eV. From the change in the solvation shell, we get the following trend: Na/h-BN > Na/G > Cl/G > Cl/h-BN. We argue that the trend in the permeation barrier changes to Cl-h-BN > Na-h-BN > Na-G > Cl-G due to a combination of several interactions, including the distortion of the water network induced by the ions, the ion-water interaction, and the ion-nanopore interaction. Overall, the desalination performance of h-BN surpasses that of their graphene counterparts.

Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here we present an ultra-low-loss silicon waveguide on 500 nm thick SOI platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

Sensors became integrated through the control condition arrangement, either for visual, mechanical, biological, or chemical applications. New stuff is designed for detection, as Diluted Magnetic Semiconductors (DMS), and are considered attractive candidates that consist of a traditional 111- V, II-VI, or group IV semiconductor. Manganese Mn-doped GaN (Mn.Gac.N) epitaxial velum has a unique magnetic, visual and chemical properties in order to control system intelligent for detector design. The subject area of the magnetic properties of MnxGal-xN is on a large scale available, there are only a few studies on the visual properties and electrochemical properties of MnxGal-xN epitaxial velums. Where MnGaN velums were used in spintronic and opto-electronic applications according to their magnetic characterization and constructed MnGaN electrode are drop fabric potential for potentiometric sensor applications since they have good performance as ion-selective electrodes. The electrical and magnetic properties that allow the control of electron spin as well as complaint period, makes the materials ideal for spintronic applications. Designing such spintronic and optoelectronic devices based on MnxGal-xN requires a broader agreement of physical, visual, electrical and chemical properties epitaxial velums that are still seldom in the literature. This bailiwick displays the potential use of MnGaN semiconductor as an all solid-state potentiometric sensor for measuring anions in solutions in the control engineering field.

Based on PVDF (piezoelectric sensing techniques), this paper attempts to study the propagation law of shock waves in brittle materials during the process of three-wavelength laser irradiation of polysilicon, and discusses the formation mechanism of thermal shock failure. The experimental results show that the vapor pressure effect and the plasma pressure effect in the process of pulsed laser irradiation lead to the splashing of high temperature and high density melt. With the decrease of the laser wavelength, the laser breakdown threshold decreases and the shock wave is weakened. Because of pressure effect of the laser shock, the brittle fracture zone is at the edge of the irradiated area. The surface tension gradient and surface shear wave caused by the surface wave are the result of coherent coupling between optical and thermodynamics. The average propagation velocity of laser shock wave in polysilicon is 8.47×103m/s, and the experiment has reached the conclusion that the laser shock wave pressure peak exponentially distributes attenuation in the polysilicon.

A compact Mach-zehnder interferometer with a novel design of directional couplers and a phase shifter has been presented as a thermo-optical sensor. With the aim of reducing device size to micro and nano dimension silicon-on-insulator technology was employed. That allowed miniaturization of device size through the reduction of its cross sectional area to 0.066 µm² and the radius of curvature of both the arms of the directional coupler and S-bends of the phase shifter to 5 µm and C-bends to 3 µm. These nano size device dimensions made it possible to reduce the coupling gap to 0.2 µm, which resulted in a significant reduction in the coupling length. The device geometry and its performance characteristics were analyzed and optimized using coupled mode analysis and finite difference time domain simulation tools, respectively. The wavelength dependent transmission loss of the device was measured at different temperature to verify and validate its performance characteristics. Tested devices showed a remarkable temperature dependent transmission characteristic offering significant changes in transmission loss band – with as low as 0.45 ⁰C change in substrate temperature. The extinction ratio and the free spectral range of the device were 26 dB and 0.26 nm respectively in the wavelength range of 1549.5 nm – 1550.5 nm. These results imply that the devices presented here can be used as compact and highly sensitive thermal sensors and optical switches.

The success of composite materials is attributed to the nature of bonding at the nanoscale and the resulting structure-related properties. This study reports the interaction, electronic, and optical properties of diamond nanothread/polymers (cellulose and epoxy) and boron nitride nanotube/calcium silicate hydrate composites using density functional theory modeling. Our findings indicate that the interaction between the nanothread and polymer is due to van der Waals-type bonding. Minor modifications in the electronic structures and absorption spectra are noticed. Conversely, the boron nitride nanotube and calcium silicate hydrate composite display an electron-shared type of interaction. The electronic structure and optical absorption spectra of the diamond nanothread and boron nitride nanotube in all configurations studied in the aforementioned composite systems are well maintained. Our findings offer an electronic-level perspective into the bonding characteristics and electronic-optical properties of diamond nanothread/polymer and boron nitride nanotube/calcium silicate hydrate composites for developing next-generation materials.

Zirconium nitride (Zr-N) is a candidate material for inert matric fuel elements in breeder reactors. They have shown exceptional resistance to radiative corrosive environments. They have shown excellent resistance to radiation stability at operational conditions in current generation reactors. But being a candidate nuclear fuel material in generation reactors, their radiation stability at higher temperature conditions observed has not been reported. We have employed molecular dynamics simulations to study the damage cascades and radiation stability of ZrN at 600K. The process of primary damage evolution by considering varying overlapping cascades with 10, 20 keV incident PKA’s reported here. The defects interface interaction and diffusion mechanism at the interface are reported.

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

The research presented in the article is devoted to the study of the influence of phase compounds on the friability of the Fe-Si-Mn-Al complex alloy. The urgency of the problem lies in the development of technology for producing a non-scatterable alloy from manganese-containing ores and high-ash coals. The main goal of the work is to determine the range of alloy compositions and the resulting phases that affect the dispersibility of the alloy, which is critically important for its industrial implementation. Research methods include thermodynamic diagram analysis (TDA) using data on the standard enthalpy of formation of intermetallic compounds, as well as experimental tests in an ore-thermal electric furnace with a capacity of 200 kV*A. The results show that Fe-Si-Mn-Al complex alloys form a variety of silicide and aluminide phases, including intermetallic compounds and ternary systems, which is critical for understanding and controlling their physicochemical properties. When smelting a complex alloy, the content of leboite (Fe3Si7) in the Fe-Si-Mn-Al system plays a significant role. The development of smelting technology will be aimed at avoiding the FeSi2-Fe3Si7-F2(FeAl3Si2)-Mn11Si19 tetrahedron area. This approach to controlling the composition of a complex alloy is critical to ensuring its consistent friability properties in industrial applications. Thus, this work represents an important step in understanding the physical properties and stability of Fe-Si-Mn-Al complex alloys, which have potential for widespread use in metallurgical and other industrial applications.

Ternary ZnS/ZnO/graphitic carbon nitride (gCN) photocatalysts were prepared by coupling gCN sheets with ZnO nanorods under solvothermal conditions followed by sulfurization using Na2S. SEM and TEM analyses show that small-sized ZnS particles (ca. 7.2 nm) deposit homo-geneously on the surface of ZnO/gCN nanohybrids. Photoluminescence and electrochemical impedance spectroscopy show that ZnS allows an enhanced charge separation efficiency as well as prolonged lifetime of photogenerated charge carriers, leading to improved hydrogen photo-production under UV light irradiation compared to ZnO/gCN. Moreover, the deposition of ZnS nanoparticles improves the photostability of the ZnS/ZnO/gCN catalyst for hydrogen produc-tion. A double Z-scheme mechanism is proposed for hydrogen photoproduction using the ZnS/ZnO/gCN heterojunction.

The preparation and thermal properties of polypropylene foils, filled with ceramic microparticles, talc or boron nitride, are described. A slow, linear increase of thermal conductivity with volume percent of filler up to 30 vol % is detected. Reduction of the foil thickness bellow 200 micrometers leads to a significant increase of thermal conductivity. Specific thermal capacities of foils are temperature dependent, they decrease with filler incorporation.

Non-woven jute (NWJ) produced from the carpet industry waste was oxidized by H2O2 or alkali treated by NaOH and compared with water-washed samples. Changes in the structure of the NWJ, tracked by XRD, showing that both chemical treatments disrupt hydrogen bond networks between cellulose Iβ chains of the NWЈ fibers. Thereafter, nano carbon nitride (nCN) was impregnated, using layer-by-layer technique, onto water washed jute sample (nCN-Jw), NaOH treated sample (nCN-Ja) and H2O2 treated sample (nCN-Jo). Analysis of the FTIR spectra of the impregnated samples, revealed that nCN anchors to the water washed NWЈ surface through hemicellulose and secondary hydroxyl groups of the cellulose. In the case of chemically treated samples nCN is preferentially bonded to the hydroxymethyl groups of cellulose. The stability and reusability of nCN-J samples were assessed by tracking the photocatalytic degradation of Acid Orange 7 (AO7) dye under simulated solar light irradiation. Results from up to ten consecutive photocatalytic cycles demonstrated varying degrees of effectiveness across different samples. nCN-Jo and nCN-Ja samples exhibited declining effectiveness over cycles, attributed to bond instability between CN and jute. In contrast, the nCN-Jw sample consistently maintained high degradation rates over ten cycles, with a dye removal percentage constantly above 90%.

Silicon (Si) is the major material of semiconductor element. For semiconductor element producing, Si need to refined into high-purity silicon crystals, which has the approximate characteristics of intrinsic semiconductor, then doping 13th group or 15th group trace element. Producing the high-purity silicon crystals with well-lattice structure need a lot of energy and highly cost. Besides, the high-purity silicon is very hard and fragile which limits the scope of application. For this reason, this study added low-grade non-complete lattice silicon in the elastic polymer, and then doped with high concentrations of fine carbon powder. This material can be conductive by physisorption;therefore, it can be used to making semiconductors. Using this material to produce electronic components can significantly reduce the cost of purification and crystallization, saving energy at the same time. Moreover, because this elastic polymer materials containing silicon, which has soft, warm, and durable physical properties. With those properties, the design of the device could be more flex, full scalability and close to the skin.

This computational research study will compare the specific charge capacity (SCC) between lithium ions inserted into crystallize silicon (c-Si) nanowires versus sodium ions inserted into amorphous silicon (a-Si) nanowires. It will be demonstrated that the potential energy V(r) within the lithium-silicon nanowire supports a coherent energy state model with discrete electron particles while the sodium-silicon nanowire potential energy will be discovered to be essentially zero and thus the electron current that travels through the sodiated silicon nanowire will be modeled as free electron with wave-like characteristics. This is due to the vast differences in the electric fields of the lithiated and sodiated silicon nanowires where the electric fields are of the order of 1e10 V/m and 1e-15 V/m respectively. The main reason for the great disparity in electric fields are due to the present of optical amplification within lithium ions and the absence of this process within sodium ions. It will be shown that optical amplification develops coherent optical interactions which is the primary reason for the surge of specific charge capacity in the lithiated silicon nanowire. Conversely, the lack of optical amplification is the reason for the incoherent optical interactions within sodium ions which is the reason for the low presence of SCC in sodiated silicon nanowires.

We present the results on photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm sized crystalline Si nanoparticles (NP) deposited on glass substrates. Finite difference time domain (FDTD) and finite element mesh (FEM) modeling of absorbed light intensity and photo-induced spatial temperature distribution across the Si NP films were well correlated with the local temperatures measured by micro-Raman spectroscopy and used for determination of heat conductivities in the films of various thicknesses. Cubic-to-hexagonal phase transition in these films caused by laser heating was found to be heavily influenced by the film thickness and heat conductive properties of glass substrate, on which the films were deposited. Heat conductivities across the drop-casted Si nanogranular films were found to be in the range of lowest heat conductivities of other types of nanostructurely voided Si films due to enhanced phonon scattering across inherently voided topology, weak NP-NP and NP-substrate interface bonding within nanogranular Si films.

The effects of soluble silicon fertilization on monocots and dicots have been widely studied. However, little is known regarding its effects on protecting epiphytes against insect and fungal pests. The efficacy of silicon fertilizer to reduce damage by thrip pest complexes, namely: Thrips palmi Karny, Frankliniella occidentalis Pergande, Chaetanaphothrips orchidii Moulton, and Chaetanaphothrips signipennis Bagnall (Thysanoptera: Thripidae), and fungal pathogens: Botrytis cinerea Persoon (Helotiales: Sclerotiniaceae) and Fusarium spp. Link (Hypocreales: Nectriaceae) was examined during a nine-month greenhouse trial in Hawaii. The trial assessed yield, quality, and pest damage across three common varieties of dendrobiums. All replicates received additional soluble silicon fertilizer applications alternating weekly between soil drench and foliar (50 mg Si/plant) applications. Yield, quality, and spray length, pest damage, plant vigor, SPAD, and leaf temperature were measured. Data were analyzed using a generalized linear model (glm) with repeated measures followed by post-hoc pair-wise comparisons in R, version 4.3.1. Treatment effects were significant at P

Aluminium matrix composite’s overall quality is impacted by the friction stir process parameters, which have a major impact on the microstructure, soundness, and particle dispersion inside the stir zone. Although it requires a lot of experimentation, optimizing these factors is vital. For the purpose of optimizing the ultimate tensile strength and microhardness of the AA5083/Silicon carbide and AA5083/Coal composites fabricated by FSP, this work used the Taguchi L9 design of experiments. Three process parameters were investigated at three levels each. For the AA5083/Silicon carbide composite, the results of the ANOVA analysis showed rotational speed has a larger impact on ultimate tensile strength while forAA5083/coal tilt angle has a larger impact on ultimate tensile strength. On the other hand, rotating speed had a greater effect on microhardness and percentage elongation of the AA5083/Coal and AA5083/Silicon carbide composite joints, according to ANOVA analysis. The need for specific process optimization for each composite was highlighted by the fact that different combinations of parameters were best for obtaining the necessary attributes in the AA5083/Silicon carbide and AA5083/Coal composites.

This article will briefly review the progress of h-BN based solid-state metal semiconductor metal (MSM) neutron detectors. In the last decade, several groups have been working on hexagonal boron nitride (h-BN) based solid-state neutron detectors. Recently, the detection efficiency of 59% has been reported. Efficient, low-cost neutron detectors made from readily available materials are essential for various applications. Neutron detectors are widely used to detect fissile materials and nuclear power plants for security applications. The most common and widely used neutron detectors are 3He based, which are sometimes bulky, difficult to transport, have high absorption length, need relatively high bias voltage (>1000 V), and have low Q-value (0.764 MeV). Also, 3He is not readily available material. Thus, there is a strong need to find an alternative detection material. 10B isotope has a high neutron absorption cross-section, and it has been tested as a coating on the semiconducting materials. Due to the two-step process, neutron capture through 10B, and then electron-hole pair generation in a typical semiconducting material, the efficiency of these devices is not up to the mark. The progress in h-BN based detectors requires a review to envision the further improvement in this technology.

We investigated layered titanium nitride (TiN) and aluminum nitride (AlN) for color glasses in Building Integrated Photovoltaic (BIPV) systems. AlN and TiN are among suitable and cost-effective optical materials to be used as thin multilayer films, owing to the significant difference in their refractive index. To fabricate the structure, we used radio frequency magnetron deposition method to achieve the target thickness uniformly. A simple, fast, and cheap fabrication method is achieved by depositing the multilayer films in a single sputtering chamber. It is demonstrated that a multilayer stack that allows light to move from a low refractive index layer to a high refractive index layer or vice-versa can effectively create various distinct color reflections for different film thicknesses and multilayer structures. It is investigated from simulation based on wave optics that, TiN/AlN multilayer offers better color design freedom and cheaper fabrication process as compared to AlN/TiN multilayer films. Blue, green, and yellow color glasses with optical transmittance of more than 80% was achieved by ITO coated glass/TiN/AlN multilayer films. This technology exhibits good potential in commercial BIPV system applications.

Perovskite-silicon tandem solar cells represent a significant advancement in photovoltaic technology, aiming to overcome the efficiency limitations of traditional silicon-based solar cells. This paper explores recent developments in the fabrication and optimization of these tandem cells, focusing on improving both efficiency and long-term stability. The combination of perovskite materials with silicon allows for broader spectrum absorption, which enhances the overall power conversion efficiency. Key strategies include optimizing the perovskite layer's composition, improving the interface between layers to reduce recombination losses, and incorporating advanced encapsulation techniques to mitigate degradation from environmental factors such as moisture and UV exposure. The review also highlights the challenges faced in scaling up production while maintaining high performance and stability. Emerging trends in material engineering and device architecture are discussed, providing insights into future directions for making perovskite-silicon tandem solar cells a viable commercial technology. This study underscores the potential of these hybrid systems to significantly boost the efficiency of photovoltaic systems, offering a promising pathway towards more sustainable and costeffective solar energy solutions.

In the paper the experimental methodology for the single-crystal circular plate deformation measurement and subsequent procedure for mechanical properties quantitation are developed. The procedure is based on a new numerical-analytical solution of nonlinear boundary-value problem for finite deformations of a circular anisotropic plate. Using the developed method, a study of the deformation of single-crystal circular plates formed on the basis of a silicon-on-insulator structure was carried out. The values of residual stresses are determined and it is shown that the presence of these stresses increases the flexural rigidity of the plate in several times.

Silicon nanoparticles (SiNPs) are highly promising for biological and biomedical applications, including bioimaging, due to their unique opltical properties (i.e. strong fluorescence and very high photostability). Their low or negligible in vitro toxicity has been reported, but in vivo toxicity and biological effects of SiNPs are still uncertain. Uncoated SiNPs were dispersed in distilled water via sonication, and their rapid aggregation was observed (319.0 ± 2.4 nm particle size). In vivo toxicity was studied using Danio rerio embryos and larvae. Rapid aggregation in their incubation medium was observed; besides that, SiNPs at 25 mg/L or higher concentration induced swim bladder malformation and/or death of the fish. The estimated LC50 value for 7-day larvae was 180 mg/L. This is the first in vivo toxicity study of uncoated and unfunctionalized SiNPs. To achieve better stability in biological media and lower toxicity, SiNPs should be covered with hydrophilic layers, but their absorption by cellular membranes may be weaker in this case.

In this work, we will study at a basic level, a series of possible new three-dimensional monoclinic allotropes of silicon, with sp3 hybridization, of the bct type; where hexahedrons and octahedrons are combined, with other cluster shapes, with basic silicon geometries such as: triangles ( Si3 ), squares ( Si4 ), pentagons ( Si5 ) and hexagons ( Si6 ); similar to two-dimensional, sp2 hybridized graphene allotropes. Calculating its electron density, bandgap energy and electronic mobility.

Semiconductors play a very important role in modern society. The improvement in performance of semiconductors is what has enabled the world to grow at such a fast pace. For decades scaling has been done through Moore’s law i.e performance improvements have been obtained due to transistor scaling where the number of transistors per unit area increase is what has contributed to the increase in performance. However, with transistor scaling reaching its limitations we need to find alternate methods to enhance silicon design to suit the computational need of modern society. To address this problem we will be looking into a few methods that enable performance scaling with a focus on analysing the most popular implementation of each in the industry.

Light trapping in single nanowires (NWs) are of vital importance for photovoltaic applications. However, circular NWs (CNWs) can limit its light-trapping ability due to high geometrical symmetry. In this work, we present a detailed study of light trapping in single NWs with an elliptical cross-section (ENWs). We demonstrate that the ENWs exhibit significantly enhanced light trapping compared with the CNWs, which can be ascribed to the symmetry-broken structure that can orthogonalize the direction of light illumination and the leaky mode resonances (LMRs). That is, the elliptical cross-section can simultaneously increase the light path length by increasing the vertical axis and reshape the LMR modes by decreasing the horizontal axis. We found that the light absorption can be engineered via tuning the horizontal and vertical axes, the photocurrent is significantly enhanced by 374.0% (150.3%, 74.1%) or 146.1% (61.0%, 35.3%) in comparison with that of the CNWs with the same diameter as the horizontal axis of 100 (200, 400) nm or the vertical axis of 1000 nm, respectively. This work advances our understanding of how to improve light trapping based on the symmetry breaking from the CNWs to ENWs and provides a rational way for designing high-efficiency single or self-assembled NW photovoltaic devices.

Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis. In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors. Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared. We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment. At last, some advanced system-level CMOS-chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes.

Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel arrays can serve as an efficient absorbing layers on account of their light trapping capabilities associated with the presence of high density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and underlying substrates. We show that the absorption in LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase). This, we suggest, imply that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate and mode hybridization.

This study presents the synthesis of graphitic carbon nitride (g−C3N4) and its nanostructures with cobalt ferrite oxide (CoFe2O4) and silver nanocubes (Ag) using the combined pyrolysis of melamine and polyol method. The resulted nanostructures were tested as electrocatalysts for hydrogen and oxygen evolution reactions in alkaline media. It was found that the Ag/CoFe2O4/g−C3N4 shows the highest current density and gives the lowest overpotential of −259 mV for HER to reach a current density of 10 mA cm−2 in 1 M KOH. Overpotentials to reach the current density of 10 mA·cm−2 for OER are 370.2 mV and 382.7 mV for Ag/CoFe2O4/g−C3N4 and CoFe2O4/g−C3N4, respectively. The above results demonstrate that CoFe2O4/g−C3N4 and Ag/CoFe2O4/g−C3N4 materials could act as a bifunctional catalyst due to the notable performance towards HER and OER and for total water splitting in practical applications is a promising alternative to noble metal-based electrocatalysts.

In this study, the preparation of the composite 3% Au/graphite-C3N4 (3% Au/g-C3N4) sensing material was prepared by doping 3% Au onto the surface of graphitic carbonitride (C3N4) for detection pimobendan. By the way of sensing materials characterization, the X-ray diffraction analysis (XRD) and transmission electron Microscope (TEM) were performed. The cyclic voltammetry (CV) was used to measure the concentration and redox properties of pimobendan. It can be seen that when the voltage value is 0.05 V, and a reduction peak was appeared and the pimobendan concentration (0 to 55 μM) has a relationship with the reduction current value. At low concentrations of pimobendan concentration from 0.0 to 0.8 μM, the linearity R2 = 0.9642 with a detection limit of 0.28 μM. A possible pimobendan sensing mechanism on 3% Au/g-C3N4 was proposed.

Graphene quality for use in biosensors was assessed in fabricated chips by a set of methods that includes atomic force microscopy (AFM), Raman spectroscopy, and low-frequency noise. It is shown that local areas of residues on the graphene surface, which arisen due to the interaction of graphene with a photoresist at the initial stage of chips development, leads to a spread of chips resistance (R) within 1-10 kΩ and to an increase in the root mean square (RMS) roughness up to 10 times that can significantly impair reproducibility of graphene parameters in biosensors chips. It was observed that the control of the photoresist residues after photolithography (PLG) by AFM and subsequent additional cleaning allow reducing the spread of R values in chips to 1–1.6 kΩ and obtaining RMS roughness similar to the roughness in pristine graphene before PLG. Monitoring of the spectral density of low-frequency voltage fluctuation (SU), which provides integral information about the defect system and quality of the material, makes it possible to identify chips with low graphene quality and with inhomogeneously distributed compressive stresses areas by the type of frequency dependence SU (f).

A switchable and tunable terahertz (THz) metamaterial based on photosensitive silicon and Vanadium dioxide (VO2) was proposed. By using finite-difference time-domain (FDTD) method, the transmission and reflective properties of the metamaterial were investigated theoretically. The results imply that, the metamaterial can realize a dual electromagnetically induced transparency (EIT) or two narrow-band absorption depending on the temperature of the VO2. Additionally, the magnitude of the EIT and two narrow-band absorption can be tuned by varying the conductivity of photosensitive silicon (PSi) via pumping light. Correspondingly, the slow light effect accompanying the EIT can also be adjusted.

Magnetron sputtering was used for producing Titanium Vanadium Nitride (TiVN) coatings on a variety of substrates. In this research, we investigate how changing the sputtering power and nitrogen: argon (N2:Ar) gas ratio affects the structural and tribological properties of TiVN coatings. Scanning Electron Microscope (SEM) technique was used to examine TiVN coating surface morphology. Both variants showed a gradual increase in the intensity of the TiVN coating's (111) and (222) peaks. TiVN coating's tribological properties were examined using a pin-on-disc tribometer with varying loads, speeds, and sliding distances. The wear rates of TiVN-coated brass pins were in the range of 2.5×10-4 to 9.14×10-4 mm3/Nm depending on load, sliding distance, and gas ratio variation, when compared to the wear rates of TiVN-coated brass pins deposited at various power, which ranged from 1.76×10-3 to 5.87×10-3 mm3/Nm.

The evolution of photovoltaic cells is intrinsically linked to advancements in the materials from which they are fabricated. This review paper provides an in-depth analysis of the latest developments in silicon-based, organic, and perovskite solar cells, which are at the forefront of photovoltaic research. We scrutinize the unique characteristics, advantages, and limitations of each material class, emphasizing their contributions to efficiency, stability, and commercial viability. Silicon-based cells are explored for their enduring relevance and recent innovations in crystalline structures. Organic photovoltaic cells are examined for their flexibility and potential for low-cost production, while perovskites are highlighted for their remarkable efficiency gains and ease of fabrication. The paper also addresses the challenges of material stability, scalability, and environmental impact, offering a balanced perspective on the current state and future potential of these material technologies.

This research will examine the computational methods to calculate the nonlinear optical process of second harmonic generation (SHG) that will be hypothesized to be present during lithium ion insertion into silicon nanowires. First it will be determined whether the medium in which SHG is conveyed is non-centrosymmetric or whether the medium is inversion symmetric where SHG as a part of the second-order nonlinear optical phenomenon does not exist. It will be demonstrated that the main interaction that determines SHG is multiphoton absorption on lithium ions. The quantum harmonic oscillator (QHO) is used as the background that generates coherent states for electrons and photons that transverse the length of the silicon nanowire. The matrix elements of the Hamiltonian which represents the energy of the system will be used to calculate the probability density of second-order nonlinear optical interactions which includes collectively SHG, sum-frequency generation (SFG) and difference-frequency generation (DFG). As a result it will be seen that at varies concentrations of lithium ions (Li+) within the crystallized silicon (c-Si) matrix the second-order nonlinear optical process has probabilities substantial enough to create second harmonic generation that could possibly be used for such applications as second harmonic imaging microscopy.

Graphite carbon nitride (g-C3N4) supported PtNi alloy nanoparticles (NPs) were fabricated via a facile and simple impregnation and chemical reduction method and explored their catalytic performance towards hydrogen evolution from ammonia borane (AB). Interestingly, the resultant Pt_0.5Ni₀.5/g-C₃N₄ catalyst affords superior performance, including 100% conversion, 100% H₂ selectivity, yielding the extraordinary initial total turnover frequency (TOF) of 250.8 mol_H2 min^-1 (mol_Pt)^-1 for hydrogen evolution from AB at 10 °C, a relatively low activation energy of 38.09 kJ mol⁻¹, and a remarkable reusability (at least 10 times), which surpass most of the noble metal heterogeneous catalysts. This notably improved activity is attributed to the charge interaction between PtNi NPs and g-C₃N₄ support. Especially, the nitrogen-containing functional groups on g-C₃N₄, serving as the anchoring sites for PtNi NPs, may be beneficial for becoming a uniform distribution and decreasing the particle size for the NPs. Our work not only provides a cost-effective route for constructing high-performance catalysts towards the hydrogen evolution of AB but also prompts the utilization of g-C₃N₄ in energy fields.

We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice- and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p- and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

The main consequence of radiation damage on a Silicon-Photomultiplier (SiPM) is a significant increase in the dark current. If the SiPM is not adequately cooled, the power dissipation causes it to heat up, which in turn affects its performance based on the temperature. In order to investigate this heating effect, experiments were carried out using a KETEK SiPM glued on an Al2O3 substrate, as well as HPK SiPMs that were either glued onto an Al2O3 substrate or a flexible PCB. The assemblies were connected either directly to a temperature-controlled chuck on a probe station or through layers of materials with well-defined thermal resistance. A DC-mode LED was used to illuminate the SiPM, and the resulting SiPM current was measured to determine the steady-state temperature. This temperature depended on the power dissipated in the multiplication region of the SiPM and the thermal resistance. This information can be utilized to adjust the SiPMs working point, taking into account the effects of self-heating. Similarly, this approach can be applied to packaged SiPMs that have an unknown thermal contact to a heat sink.

The tandem Solar cell has high power conversion efficiency (PCE), so they are taken as the next step in photovoltaic evolution. The tandem solar cell also overcome the limitations of Single-junction solar cells by reducing thermalization losses and also reduce the fabrication cost. The fabrication of tandem solar cells is highly efficient after the origination of halide perovskite absorber material, this material will shape the future of tandem solar cells. Researchers have already shown that this material can convert light more efficiently than standalone sub cell. Today, researchers around the world are keeping the configuration of a tandem solar cell as their agenda. A Tandem solar cell is a stacking of multiple layers having different bandgaps with specific maximum absorption and width. We reviewed perovskite/silicon tandem solar cells with different sub-module configurations. Move forward, we discuss the tandem module technology, sub cell of a tandem can be wired in several ways two terminals 2T monolithic and mechanically stacked, a four-terminal 4T mechanically stacked, and three-terminal 3T monolithic stack devices. This review paper provides a side-by-side comparison of theoretical efficiencies of multijunction solar cells. The highest efficiency has been evaluated at 39.4% for a three-level structure.

Copper-nitride (Cu3N) material is attracting much attention as a potential next-generation thin-film solar-light absorber. In this work, polycrystalline Cu3N thin films were prepared using reactive-RF-magnetron sputtering, at room temperature,onto glass and silicon substrates. The optical properties of the Cu3N thin layers were studied by spectroscopic ellipsometry and transmission, to achieve a low-cost absorber material to replace conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by FIB-SEM microscopy and FTIR spectroscopy.

Molecular dynamics(MD) simulations are carried out to characterize the mechanicalproperties and failure behavior of van der Waals heterostructures composed ofgraphene and hexagonal boron nitride(hBN) single layer sheets. The graphene–hBNand hBN–graphene–hBN heterostructures simulations are carried out under tensileand shear deformation. Accordingly, stress versus strain curves of each systemare plotted and various properties of heterostructures, namely elastic modulusand shear modulus as well as failure stress and failure strain, are evaluatedand compared with one another as well as with the pristine graphene and hBNsheets. Subsequently, the failure mechanism/characterization of each sheet in theheterostructures is described. Alternatively, the elastic and shear modulus of eachheterostructure are computed by means of rule of mixture(ROM) which are in goodagreement with results that are obtained from MD simulations.

The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of high-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes are investigated. The main gas-phase and solid products of plasma-chemical transformations are determined. Thermodynamic analysis of SiCl4 + H2 and GeCl4 + H2 systems for optimal process parameters was carried out. Using the example of hydrogen reduction of SiCl4 by the method of numerical modeling, gas-dynamic and thermal processes for this type of discharge are investigated. The impurity composition of gas-phase and solid reaction products is investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, is shown.

Tamm Plasmon Polariton (TPP) is a nanophotonic phenomenon that has attracted much attention due to its spatial strong field confinement, ease of mode excitation and polarization independence. TPP has applications in sensing, storage, lasing, perfect absorber, solar cell, nonlinear optics, and many others. In this work, we demonstrate a biosensing platform based on TPP resonant mode. Both theoretical analyses based on Transfer Matrix Method and experimental validation through nonspecific detection of liquids of different refractive indices and specific detection of SARS-CoV-2 nucleocapsid protein (N-protein) are presented. Results show that TPP biosensor has high sensitivity and good specificity. For N-protein detection, the sensitivity is 1.5 nm/(µg/ml) and the limit of detection can reach down to below 7 ng/ml with spectrometer of 0.01 nm resolution of wavelength shift. This work paves the way for design, optimization, fabrication, characterization, and performance analysis of TPP based biosensors

Electro-optic modulator (EOM) is one of the key devices of high-speed optical fiber communication system and ultra-wideband microwave photonic system. Silicon-organic hybrid (SOH) integration platform combines the advantages of silicon photonics and organic materials, providing a high electro-optic effect and compact structure for photonic integrated devices. In this paper we present a SOH integrated EOM with comprehensive investigation of EOM structure design, silicon waveguide fabrication with Slot structure, on-chip poling of organic electro-optic material, and characterization of EO modulation response. The SOH integrated EOM is measured with 3dB-bandwidth of over 50 GHz and half-wave voltage length product of 0.26 V·cm. Furthermore, we demonstrate a microwave photonics phase shifter by using the fabricated SOH integrated dual parallel Mach-Zehnder modulator. The phase shift range of 410 degree is completed from 8 GHz to 26 GHz with a power consumption of less than 38 mW.

Herein, we have fabricated graphitic carbon nitride (g-C3N4) nanosheets with embedded ZnCdS nanoparticles to form a type II heterojunction using a facile synthesis approach and used for photocatalytic H2 production. The morphologies, chemical structure and optical properties of the obtained g-C3N4‒ZnCdS samples were characterized by a battery of techniques such as, TEM, XRD, XPS and UV-Vis DRS. The as-synthesized g-C3N4‒ZnCdS, photocatalyst exhibits the highest hydrogen production rate of 108.9 μmol·g-1·h-1 compared to individual components (g-C3N4: 13.5 μmol·g-1·h-1, ZnCdS: 45.3 μmol·g-1·h-1). The improvement of its photocatalytic activity is mainly attributed to the heterojunction formation and resulting synergistic effect, which provide more channels for charge carrier migration and reduce the recombination of photogenerated electrons and holes. Meanwhile, the g-C3N4‒ZnCdS heterojunction catalyst also showed higher stability over a number of repeated cycles. Our work sheds insight of using g-C3N4 and metal sulfide combination to develop low-cost, efficient, visible-light active hydrogen production photocatalysts.

Silicon has been proved to be one of the most promising anode materials for the next generation of lithium-ion battery. For the application in batteries, Si anode should have high capacity and must be industrially scalable. In this study, we have designed and synthesised a hollow structure to meet these requirements. All the processes are carried out without special equipment. The Si nanoparticles that are commercially available are used as the core sealed inside TiO₂ shell, with rationally designed void space between the particles and shell. The Si@TiO₂ are characterised using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscope (SEM). The optimised hollow structured silicon nanoparticles, when used as anode in lithium-ion battery, exhibit a high reversible specific capacity over 600 mAhg-1. This excellent electrochemical property of the nanoparticles can be attributed to their optimised phase and unique hollow nanostructure.

We successfully created a composite photonic structure out of porous silicon (PSi) microcavities doped by the photochromic protein, photoactive yellow protein (PYP). Massive incorporation of the protein molecules into the pores was substantiated by a 30-nm shift of the resonance dip upon functionalization, and light-induced reflectance changes of the device due to the protein photocycle were recorded. Model calculations for the photonic properties of the device were consistent with earlier results on the nonlinear optical properties of the protein, whose degree of incorporation into the PSi structure was also estimated. The successful proof-of-concept results are discussed in light of possible practical applications in the future.

In this paper, we review devices used in silicon photonic switches. Devices in switches are divided into active and passive devices. Active devices consist of microring resonator, contra directional couplers, mach zhender switches. Passive devices consist of waveguide crossings and arrayed waveguide gratings. We also list the state of the art in devices in a comparison table.

The purpose of this scoping review was to identify gaps in the literature and summarize findings from studies examining the use of silicon-, silica-, and silicate-based toothpastes for the remineralization and repair of mineralized tooth tissues. A 10-year literature search was conducted using PubMed and Scopus, adhering to PRISMA 2020 guidelines. A total of 331 studies were initially identified, with 56 full-text review articles. After selecting the manuscripts, 27 studies were qualitatively analyzed by four reviewers, focusing on the results of both in vivo and in vitro methods. The findings suggest that toothpastes containing silicon, silica, and silicate demonstrate promising results for remineralization and enamel repair, with evidence of mineral layer formation and/or deep enamel surface remineralization under various conditions. Additionally, the use of these toothpastes can lead to the obliteration of dentinal tubules within a few days. The results collectively support the efficacy of these toothpastes in enamel repair. Most of the clinical studies focused on dentine hypersensitivity, followed by white spot lesions. In conclusion, silicon-, silica-, and silicate-based toothpastes (bioactive-Si-toothpastes) can be considered effective based mostly on laboratory studies. There remains a need for more in vivo research studies on enamel and dentin mineral repair. Existing studies provide strong evidence that these technologies can reduce dentin hypersensitivity and promote enamel-dentin repair.

In this study, Silicon Carbide (SiC) nano-particle based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range SiC printed thermistors. Initially, commercial silver ink was screen printed to fabricate inter-digitated electrodes (IDE’s) onto flexible Kapton® substrate via screen printing. Thermistor inks with different weight ratios of SiC nano- particles dispersed in polyimide resin matrix were fabricated. The SiC-polyimide temperature sensing inks were screen printed atop the IDE structures to form fully printed thermistors and encapsulated with a adhesive backed polyimide film for humidity inhibition. The high temperature tolerance of the Kapton® allowed the the sensors to be tested over a wide temperature range form 25◦C to 170◦C. The printed SiC thermistors exhibit excellent repeatability and stability over 15 hours of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a temperature coefficient of Resistance (TCR) of -0.556 %/◦C, a thermal coefficient of 502 K (β-index) and an activation energy of 0.08 eV which are comparable with printed thermistors previous reported. Further, the thermistor demonstrates an accuracy of ±1.35◦C which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10-90 %RH and a 4.2 % drift in baseline resistance after 100 cycles of aggressive bend testing at a 40°angle. The use of commercially available low cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance.

The microstructure of the coating during hot-dip galvanizing under industrial conditions of two structural steels, a low-silicon ASTM A36 steel and a high-silicon Q345B steel, both of commercial quality, have been characterized for industrial-relevant times. For both cases it is noted that the formation of the Fe-Zn phases begins in early stages during the heating of the steel, a situation in which all the phases are in the solid state. The characterization was carried out through traditional metallographic techniques including SEM-EDS and DRX equipment. The evolution in time of the microstructure of both steels is examined, being able to observe that the mechanism by which silicon accelerates the formation of Fe-Zn phases in galvanizing is related to the change in the energy of the interfaces caused by a silicon accumulation in the liquid phase in contact with the ζ layer. These results provided us with a deeper understanding of the phase evolution in the hot-dip galvanizing of high silicon steels.

Silicon-based photodetectors, as low-cost and environmentally friendly optical sensors, are attractive. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi level pinning effect. The removal of Fermi level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17×10^8 cm Hz^1/2 W^-1 and 2.41×10^7 cm Hz^1/2 W^-1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms.

Silicon photonics is emerging as a competitive platform for electronic-photonic integrated circuits (EPICs) at the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. Here, we present a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2-µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier-collection path, thereby allowing for simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2-µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2-µm wavelength band. The results indicate that the performance of the GeSn WGPD has strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12×1010 cmHz½W-1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

Cycling reliability is crucial for Si-based materials due to severe volume change during cycles that results in the fast capacity fading. Though the binder only occupies a very low amount of the total mass of anodes, it is proved to perform a key parameter to improve the cycle performance of Si-based anodes. Because they are eco-friendly and cost saving, water-based binders styrene-butadiene rubber (SBR) and carboxymethyl cellulose (CMC) are regarded as the better binder to substitute Poly (vinylidene difluoride) (PVDF) as the binder for Si-based anode. In this study, the anodes are fabricated by simply mixing the active materials (naso Si, graphite and conductive additive) together and using the mixture of SBR and CMC as a binder. The results showed that the retention capacities of the anodes are more than 440 mAh/g after 400 cycles. It indicates that it is an easy and simple way to make high performance anodes.

Effect of abrasive shape on the three-body abrasion behaviors of monocrystalline silicon was investigated by Molecular dynamics modelling. The axial ratio of abrasive particle was varied from 1.00, i.e., a complete sphere, to 0.40 to mimic abrasive shape. The particle’s movement turns toward sliding from rolling when the axial ratio becomes less than a critical value 0.46. In the abrasion process, the friction force and normal force showed an approximately sinusoid-like fluctuation for the rolling ellipsoidal particles, while the front cutting of particle caused that friction force increased and became larger than normal force for sliding particles. The phase transformation process was tracked under different particle’ movement patterns. The Si-II and Bct5 phase producing in loading process can partially transform to Si-III/Si-XII phase and backtrack to original crystal silicon under pressure release, which also occurred in the abrasion process. The secondary phase transformation showed difference for particles’ rolling and sliding movements after three-body abrasion. The rolling of particle induced the periodical and inhomogeneous deformation of substrates, while the sliding benefited producing high-quality surface in CMP process. This study aiming to construct more precise model to understand the wear mechanism benefits evaluating the MEMS wear and CMP process of crystal materials.

Copper-nitride (Cu3N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar-light absorber in solar cells. In this communication, polycrystalline Cu3N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu3N thin film layers were studied by UV-MIR (0.2-40 μm) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by focused ion beam scanning electron microscopy, and both FTIR and Raman spectroscopies.

We experimentally demonstrate waveguide and microring resonator (MRR) polarizers by integrating 2D graphene oxide (GO) films onto silicon (Si) photonic devices. The 2D GO films with highly anisotropic light absorption are on-chip integrated with precise control over their thicknesses and sizes. Detailed measurements are performed for the fabricated devices with different GO film thicknesses, coating lengths, and Si waveguide widths. The results show that a maximum polarization-dependent loss (PDL) of ~17 dB is achieved for the hybrid waveguides, and the hybrid MRRs achieved a maximum polarization extinction ratio (PER) of ~10 dB. We also characterize the wavelength- and power-dependent response for these polarizers. The former demonstrates a broad operation bandwidth of over ~100 nm, and the latter verifies performance improvement enabled by photo-thermal changes in GO films. By fitting the experimental results with theoretical simulations, we find that the anisotropy in the loss of GO films dominates the polarization selectivity of these devices. These results highlight the strong potential of 2D GO films for realizing high-performance polarization selective devices in Si photonic platform.

With the ever-growing emphasis on global decarbonization and rapid increases in the power density of electronics equipment in recent years, new methods and lightweight materials have been developed to manage heat load as well as interfacial stresses associated with Coefficient of Thermal Expansion (CTE) mismatch between components. The Al-Si system provides an attractive combination of CTE performance and high thermal conductivity whilst being a very lightweight option. Such materials are of interest to industries where thermal management is a key design criterion, such as aerospace, automotive, consumer electronics, defense, EV and space. This paper will describe the development and manufacture of a family of high-performance hypereutectic Al-Si alloys (AyontEX™) by a powder metallurgy method. These alloys are of particular interest for structural heat sink applications that require high reliability under thermal cycling (CTE of 17μm/(m·°C)) as well as reflective optics and instrument assemblies that require good thermal and mechanical stability (CTE of 13μm/(m·°C)). Critical performance relationships are presented, coupled with the microstructure, physical and mechanical properties of these Al-Si alloys.

Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tubes signals would serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method are presented.

This article describes a novel electrochemical on-chip biosensor that utilizes anti-PSA antibody (Ab) and silver nanoparticles (AgNPs) to enhance the sensing and detection capability of prostate specific antigen (PSA) in the blood. The AgNPs are prepared, characterized, and applied onto a silicon photonic on-chip biosensing receptor platform designed to enhance the accurate detection of PSA. The AgNPs were synthesized by a chemical reduction method using silver nitrate (AgNO₃) as the precursor. Transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy dispersion X-ray spectroscopy (EDS), small angle X-ray scattering (SAXS), X-ray diffraction (XRD), and light microscopy were among the methods used in the characterization and analysis of the AgNPs. Each stage of the immunosensor fabrication was characterized using cyclic voltammetry. The proposed immunosensor was applied in the detection of PSA, a prostate cancer biomarker, with a high sensitivity and a limit of detection of 0.17 ng/mL over a linear concentration range of 2.5 to 11.0 ng/mL. The immunosensor displayed good stability and was selective in the presence of interfering species like immunoglobulin (Ig) in human serum, ascorbic acid (AA), and diclofenac (Dic). The detectivity and sensitivity are significantly higher than previous reports on similar or related technologies.

The work presented in this paper represents a preliminary study on the performance of the new Silicon tracker layer, the Layer 0 (L0), that will be installed on top of the Alpha Magnetic Spectrometer (AMS-02), at the end of 2024. AMS-02 is a cosmic rays (CR) detector that has been operating on the International Space Stations (ISS) since May 2011. Thanks to its 9-layer Silicon tracker, this apparatus can perform high energy CR measurements with an unprecedented level of statistics and precision. However, high Z (Z $\ge 15$) CR nuclei statistic is strongly affected by fragmentation along the detector: with the installation of the new Silicon layer will be possible to achieve new unique high energy (TeV region) measures for those nuclei along with increased statistics for all nuclei up to Zinc. To achieve this, a Silicon ladder prototype, that will be part of the final Silicon layer, has been exposed to an ions test beam at the super-proton-synchrotron (SPS) of the CERN to characterize its charge resolution and the readout electronics. Preliminary results have shown a charge resolution of 10 $\%$ for nuclei up to Z=7.

Light absorption in single nanowires (NWs) is one of the most crucial factors for photovoltaic applications. In this paper, we carried out a detailed investigation of light absorption in single rectangular NWs (RNWs). We show that the RNWs exhibit improved light absorption compared with the square NWs (SNWs), which can be attributed to the symmetry-breaking structure that can increase the light path length by increasing the vertical side and the enhanced leaky mode resonances (LMRs) by decreasing the horizontal side. We found that the light absorption in silicon RNWs can be enhanced by engineering the horizontal and vertical sides, the photocurrent is significantly increased by 276.5% or 82.9% compared with that of the SNWs with the same side length as the horizontal side of 100 nm or the vertical side of 1000 nm, respectively. This work provides an effective way for designing high-efficiency single NW photovoltaic devices based on the symmetry breaking from the SNWs to RNWs.

This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

A simple fabrication method in the surface modification of electroosmotic silicon microchannel using thermal dry oxidation is presented. The surface modification is done by coating the silicon surface with a silicon dioxide (SiO₂) layer using thermal oxidation process. The process is aimed not only to improve the surface quality of the channel to be suitable for electroosmotic fluid transport but also to reduce the channel width using a simple technique. Initially, the parallel microchannel array with dimensions of 0.5 mm length and width ranging from 1.8 µm to 2 µm are created using plasma etching on the 2x2 cm <100> silicon substrate. The oxidation of silicon channel in a thermal chamber is then conducted to create the SiO₂ layer. The layer properties and the quality of the surface are analyzed using SEM and surface profiler, respectively. The results show that the maximum oxidation growth rate occurs in the first 4 hours of oxidation time and the rate decreases by time as the oxide layer becomes thicker. It is also found that the surface roughness is reduced with the increase of process temperature and oxide thickness. The scallop effect on the vertical wall due to plasma etching process also improved with the presence of the oxide layer. After the oxidation, the channel width is reduced by ~40%. The demonstrated method is suggested for the fabrication of a uniform channel cross section with high aspect ratio in sub-micro and nanometer scale that will be useful for the electroosmotic flow (EOF) manipulation of the biomedical fluid sample.

The rapid development of the photovoltaic (PV) industry will result in an increase in the amount of electrical and electronic waste from used PV panels. Only in Poland, the total capacity installed in photovoltaic sources in Poland in May 2020 exceeded 1,950 MW, and the installation weight was approximately 120,000. tone. The problem arises in the recycling or management of this waste. This work presents methods used to recycle waste into photovoltaic modules. The authors investigated the possibility of mechanical and chemical processing of crystalline silicon. A method of thermal treatment of the panel was also proposed. As a result of the research, it was found that the stage of separating materials (crystalline cream, EVO foil, aluminum frame) plays an important role in the recycling process, which is not easy. Chemical treatment allows the silicon to become plastic and the temperature melts the back layer of the panel.

Water deficit is one of the factors that most influence plant growth and yield. Thus, this study aimed to evaluate the effect of silicon and salicylic acid application and water deficit on the growth and photosynthetic and osmoregulatory metabolism of Talisia esculenta Radlk seedlings and their recovery potential after the resumption of irrigation. Six treatments were performed: irrigation, irrigation suspension, irrigation suspension + silicon at 0.5 g L−1, irrigation suspension + silicon at 1.0 g L−1, irrigation suspension + salicylic acid at 50 mg L−1, and irrigation suspension + salicylic acid at 100 mg L−1. The evaluations were carried out at the beginning of the experiment (T0), at 10 and 15 (DIS) days after irrigation suspension, when the seedlings showed a photosynthetic rate close to zero, and at recovery (REC). The plants were submitted to water restriction for up to 15 days, being then re-irrigated until the recovery point, which was monitored based on the photosynthetic rate. Silicon application attenuated the harmful effects of water deficit on gas exchange, initial fluorescence, promoted proline accumulation in the leaf and root, and provided higher seedling quality. Salicylic acid application contributed to the maintenance of the relative water content of leaves during the water deficit period. Silicon and salicylic acid applications can attenuate the harmful effects of water stress, with silicon being the most effective agent in maintaining its growth and metabolism.

Silicon-based thin-films and nanostructures are of paramount importance in a wide range of applications, including microelectronics, photovoltaics, large area sensors, as well as biomedicine. The wide accessibility of silicon and its relatively low cost have driven a continuous improvement of the technology based on this element. Plasma technology has been widely used for the synthesis of coatings and nanostructures based on silicon. Moreover, it has given a fundamental contribution for continuously improving the control of the physicochemical properties of silicon-based materials, and for allowing the synthesis of nanometric structures with well-defined shape and morphology. In this work, we have reviewed the most interesting developments of plasma-assisted processed for the synthesis of Si-based materials, both inorganic and organic, in the last five years. A special attention has been given to the new techniques, or modifications of already existing ones, that open new possibilities for the synthesis of materials with new properties, as well as nanostructures with novel characteristics.

Solid state sensors having timing capabilities are becoming an absolute need in particle tracking techniques of future experiments at colliders. In this sense, silicon sensors having 3D structure are becoming an interesting solution, due to their intrinsic speed and radiation resistance. A characteristics of such devices is the strict dependence of their performance on their geometric structure, which can be widely optimised by design, thus requiring suitable tools for an accurate modeling of their behaviour. This paper illustrates the development, performance and use of the TCoDe simulator, specifically dedicated to the fast simulation of carrier transportation phenomena in solid state sensors. Some examples of its effectiveness in the design and analysis of 3D sensors is also given.

Support effect is an important issue in heterogeneous catalysis while the explicit role of a catalytic support is often unclear for catalytic reactions. A systematic density functional theory computational study is reported in this paper to elucidate the effect of a model boron nitride (BN) support on the first N-H bond activation step of NH3 on Run (n =1, 2, 3) metal clusters. Geometry optimizations and energy calculations were carried out using density functional theory (DFT) calculation for intermediates and transition state from the starting materials undergoing the N-H activation process. The primary findings are summarized as follows. The involvement of the model BN support does not significantly alter the equilibrium structure of intermediates and transition state in the most favorable pathway (MFP). Moreover, the involvement of BN support decreases the free energy of activation, ΔG≠, thus improving the reaction rate constant. This improvement is more obvious at high temperatures like 673 K than low temperatures like 298 K. The BN support effect leading to the ΔG≠ decrease is most significant for the single Ru atom case among all three cases studied. Finally, the involvement of model BN may change the spin transition behavior of the reaction system during the N-H bond activation process. All these findings provide a deeper insight into the support effect on the N-H bond activation of NH3 for supported Ru catalyst in particular and for supported transition metal catalysts in general.

Herein, we introduce a boron nitride nanosheet (BNNS)-reinforced cellulose nanofiber (CNF) film as a sustainable oxygen barrier film that can potentially be applied in food packaging. Most of commodity plastics are oxygen-permeable. CNF exhibits an ideal oxygen transmittance rate (OTR) of <1 cc/m²/day in highly controlled conditions. A CNF film typically fabricated by the air drying of a CNF aqueous solution reveals an OTR of 19.08 cc/m²/day. The addition of 0-5 wt% BNNS to the CNF dispersion before drying results in a composite film with highly improved OTR, 4.7 cc/m²/day, which is sufficient for meat and cheese packaging. BNNS as a 2D nanomaterial increases the pathway of oxygen gas and reduces the chances of pin-hole formation during film fabrication involving water drying. In addition, BNNS improves the mechanical properties of the CNF films (Young’s modulus and tensile strength) without significant elongation reductions, probably due to the good miscibility of CNF and BNNS in the aqueous solution. BNNS addition also produces negligible color change, which is important for film aesthetics. An in vitro cell experiment was performed to reveal the low cytotoxicity of the CNF/BNNS composite. This composite film has great potential as a sustainable high-performance food packaging material.

Field-effect transistor (FET)-based biosensors stand as powerful analytical tools for detecting trace-specific biomolecules in diverse sample matrices, especially in the realms of pandemics and infectious diseases. The primary concern in applying these biosensors is their stability, a factor directly impacting the accuracy and reliability of sensing over extended durations. The risk of biosensor degradation is substantial, potentially jeopardizing sensitivity and selectivity and leading to inaccurate readings, including the possibility of false positives or negatives. This paper delves into the documented degradation of silicon nanobelt FET (NBFET) biosensors induced by buffer solutions. The results highlight a positive correlation between immersion time and the threshold voltage of NBFET devices. Secondary ion mass spectrometry analysis demonstrates a gradual increase in sodium and potassium ion concentrations within the silicon as immersion days progress. This outcome is ascribed to the nanobelt's exposure to the buffer solution during the biosensing period, enabling ion penetration from the buffer into the silicon. The study emphasizes the critical need to address buffer solution-induced degradation to ensure the long-term stability and performance of FET-based biosensors in practical applications.

Bending waveguide is one of the building blocks of on-chip photonic integrated circuits (PICs). Previous bending waveguides (BWs) usually suffer from larger footprint size in the bending region, which is are not conducive to develop large-scale and high-density PICs. To this end, we propose and numerically investigate an ultra-compact silicon-on-insulator 180-degree waveguide bend with a bending radius of 2 µm. Being different from the previous BWs, the design is based on topologically optimized digital metamaterials, which is implemented by using intelligent genetic algorithms. Simulated results show that the proposed structure has a -1.36 dB bend efficiency per 180-degree at a wavelength of 1.55 µm and occupies a footprint of only 4 × 4 µm2. Moreover, the crosstalk is <−20 dB and the loss is <2.6 dB over a >100 nm operating bandwidth (1.6-1.7 µm) for TE0 modes. With the wide operating bandwidth and ultra-compact footprint, the proposed silicon-based 180-degree waveguide bend shows a potential application as the fundamental component for optical communication interconnect in the ultra-highly integrated photonic circuit.

The aim of the study was to find the effect of polyethylene (PE) coatings on the short-circuit current of silicon photovoltaic cells covered with glass, in order to improve the short-circuit current of the cells. Various combinations of PE films (thicknesses ranging from 9 to 23 µm, number of layers ranging from 2 to 6) with glasses (greenhouse, float, optiwhite and acrylic glass) were investigated. The best current gain of 4.05% was achieved for the coating combining a 1.5 mm-thick acrylic glass with 2 × 12 µm-thick PE films. This effect can be related to the formation of an array of micro-wrinkles and micrometer-sized air bubbles with a diameter of 50 to 600 µm in the films, which serve as micro-lenses and enhance light trapping.

Based on the sensitive sum frequency generation cross-correlation frequency-resolved optical gating (SFG-XFROG) measurement setup, besides the pulse broadening, blue shift, red shift and obvious pulse acceleration, we observed the soliton evolution when the low energy soliton pulse with wavelength of 1555nm transmit through the Si photonic crystal waveguide. The measurements were nicely matched with the simulation results, which are achieved with an optimized nonlinear Schrödinger equation (NLSE) modeling. The effects of various parameters of the silicon photonic crystal waveguides and the incident pulses on the pulse transmission were also analyzed, including the nonlinear effects and dispersion such as the self-phase modulation (SPM), self-steepening (SS) and intra-pulse Raman scattering(IRS). The results help us understand further the ultra-fast nonlinear dynamics of soliton in silicon-based waveguides, and even open a novel way for soliton-based functional elements in CMOS-compatible platforms.

Silicone RTV-based engineering rubber composite products have been widely used for several applications in various fields as a major component such as structure, automotive, and medical. In its application, the rubber composite product is placed in an open area that is directly exposed to sunlight and rain. It has a significant negative impact on changes in chemical and rheological properties, making the product life of rubber composite products shorter. Therefore, in this study, changes in the chemical and rheological properties of both isotropic and anisotropic magnetorheological elastomer (MRE) treated with accelerated weathering were studied compared to untreated specimens with specimens that had been treated. MRE specimens with 40% by weight CIP were prepared with no current excitation and another sample were made under 1.5 T of magnetic flux density. Each specimen was treated in an accelerated weathering machine Q-Sun Xe-1 Xenon Test Chamber with a UV light exposure cycle for 102 minutes and 18 minutes of UV light combined with water spray for 24 hours followed by a condensation cycle of 4 hours in a dark period. Material characterization was carried out using FTIR and Rheometer to determine the changes in chemical and rheological properties. The morphological analysis results showed that the surface was rough and more cavities occurred after being given weather treatment. Rheometer test results showed a decrease in storage modulus in each MRE specimen that had been treated compared to untreated MRE specimens. Meanwhile, FTIR testing showed a change in wave peak between untreated and treated MRE specimens.

Recent developments in optical biosensors based on integrated photonic devices are reviewed with a special emphasis on silicon-on-insulator ring resonator. The review is mainly devoted to the following aspects: (1) Principles of sensing mechanism, (2) sensor design, (3) biofunctionalization procedures for specific molecule detection and (4) measurement set-ups and advances in chip-integration. The inherent challenges of implementing photonics-based biosensors to meet specific requirements of applications in medicine, food analysis, and environmental monitoring are discussed.

The article reviews the current status of label-free integrated optical sensors focusing on the evolution over the years of their analytical performance. At first a short introduction to the evanescent wave optics is provided followed by detailed description of the main categories of label-free optical sensors including sensors based on surface plasmon resonance (SPR), grating coupler, photonic crystals, ring resonators and interferometric transducers. After a short reference to SPR techniques, including localized SPR, integrated optical sensors i.e., grating-couplers, interferometers, photonic crystals, microring resonators are reviewed. For each type of sensor, the detection principle is first provided followed by description of the different transducer configurations so far developed and their performance as biosensors. Finally, a short discussion about the current limitations and future perspectives of integrated label-free biosensors optical sensors is provided

Neural microprobes represent an important component of neural prosthetic systems where implanted microprobes record the electro-potentials generated by specific thoughts in the brain and convey the signals to algorithms trained to interpret these thoughts. Here, we present novel elongated multi-site neural probe that can reach depths greater than 10mm. We hypothesize that reaching such depth allows the recording of cognitive signals required to drive cognitive prosthetics. The impedance of the recording sites on the probes was on the order of 500 kΩ at 1 kHz, which is consistent with probes used for neurophysiological recordings. The probes were made porous using Xenon Difluoride (XeF₂) dry etching to improve the biocompatibility and their adherence to the surrounding neural tissue. Numerical studies were performed to determine the reliability of the porous probes. We implanted the elongated probe in rats and show that the elongated probes are capable of simultaneously recording both spikes and local field potentials (LFPs) from various recording sites.

The study addresses the fabrication of indium aluminum nitride (InAlN) layers by DC co-sputtering at room temperature, highlighting their potential in optoelectronic and solar cell applications. Experiments were carried out with different powers for the aluminum target, observing changes in the stoichiometry and material properties. XPS and AES analysis confirmed the variation in indium and aluminum concentration, directly affecting bandgap and electrical properties such as mobility and free carrier concentration. The layers showed smooth surfaces with low roughness, suitable for high efficiency interfaces. This method promises to reduce costs and improve the accessibility of efficient solar technologies based on InAlN semiconductor alloy.