During the last decades the quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science. Recently, the discovery of a novel class of materials, the topological semimetals, has led to a growing interest for the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure and carrier mobility in recently discovered high carriers mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. The huge magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The design of novel quantum sensors based on solid-state semimetals is also encouraged.

The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of radio-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes were investigated. The main gas-phase and solid products of plasma-chemical transformations were determined. Thermodynamic analysis of SiCl4 + H2 and GeCl4 + H2 systems was carried out. It is shown that under the implemented experimental conditions, equilibrium components of the products are established. The detected spectra of chemical activity were studied, which gave reason to assume that the molecular mechanism of the hydrogen reduction process is the main one. The impurity composition of gas-phase and solid reaction products was investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, was shown.

Thermal simulations are an important part in the design of electronic systems, especially as systems with high power density become common. In simulation-based design approaches, a considerable amount of time is spent by repeated simulations. In this work, we present a proof-of-concept study of the application of convolutional neural networks to accelerate those thermal simulations. The goal is not to replace standard simulation tools but to provide a method to quickly select promising samples for more detailed investigations. Based on a training set of randomly generated circuits with corresponding Finite Element solutions, the full 3D steady-state temperature field is estimated using a fully convolutional neural network. A custom network architecture is proposed which captures the long-range correlations present in heat conduction problems. We test the network on a separate dataset and find that the mean relative error is around 2 % and the typical evaluation time is 35 ms per sample ( 2 ms for evaluation, 33 ms for data transfer). The benefit of this neural-network-based approach is that, once training is completed, the network can be applied to any system within the design space spanned by the randomised training dataset (which includes different components, material properties, different positioning of components on a PCB, etc.).

A single mode waveguide grating coupler based on multiple Si-SiO₂ pairs onto Si substrate has been designed. Numerical analysis has been carried out to calculate optimum thickness of the layers of Si-SiO₂ that ensures the constructive interference between reflected waves and actual guided wave for high coupling efficiency. Based on the results, an optimal design is developed and modeled by using a 2-D finite difference time domain (2-D FDTD) simulator that dictates a coupling efficiency of as much as 78% (-1.07 dB) at the wavelength of 1550 nm, and a 1-dB bandwidth of 77 nm. The numerical method will be useful to calculate the optimum thicknesses of the layers for any reflector based grating coupler of different materials.

A simple and rapid method for efficient synthesis of sulfonyl chlorides/bromides from sulfonyl hydrazide with NXS (X = Cl or Br) and late-stage conversion to several other functional groups has been described. A variety of nucleophiles could be engaged in this transformation thus permitting the synthesis of complex sulfonamides, sulfonates. In most cases, these reactions are highly selective, simple, and clean, affording products in excellent yields.

Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with its varied application in solar cells as a transparent front contact, intermediate reflector, back reflector layer and even tunnel layer for passivating contacts, owing to easy tailoring of its optical properties. In this work, we systematically investigate the influence of gas mixture (SiH4, CO2, PH3 and H2), RF power and process pressure on the optical, structural and passivation properties of thin n-type nc-SiOx:H films prepared in an industrial, high throughput, plasma-enhanced chemical vapor deposition (PECVD) reactor. We provide a detailed description of the n-type nc-SiOx:H material develop-ment using various characterization techniques (SEM, EDX, Raman spectroscopy, and spectro-scopic ellipsometry) with a focus on the relationship between the material properties and the pas-sivation they provide to n-type c-Si wafers characterized by their effective carrier lifetime (τeff). Further, we also outline the parameters to be kept in mind while developing different n-type nc-SiOx:H layers for different solar cell applications. We report a tunable optical gap (1.8 – 2.3 eV) for our n-type nc-SiOx:H films as well as excellent passivation properties with τeff up to 3.5 ms (iVoc ~ 715 mV) before annealing. Oxygen content plays an important role in determining the crystallinity and hence passivation quality of the deposited nanocrystalline silicon oxide films.

In this work, the analytical Lagrange-Kirchhoff model for the deformation for a taiko plate silicon is proposed. Under the conditions of validity of the linear theory of thin plates, the model is in agreement with the experimental data.

Based on PVDF (piezoelectric sensing techniques), this paper attempts to study the propagation law of shock waves in brittle materials during the process of three-wavelength laser irradiation of polysilicon, and discusses the formation mechanism of thermal shock failure. The experimental results show that the vapor pressure effect and the plasma pressure effect in the process of pulsed laser irradiation lead to the splashing of high temperature and high density melt. With the decrease of the laser wavelength, the laser breakdown threshold decreases and the shock wave is weakened. Because of pressure effect of the laser shock, the brittle fracture zone is at the edge of the irradiated area. The surface tension gradient and surface shear wave caused by the surface wave are the result of coherent coupling between optical and thermodynamics. The average propagation velocity of laser shock wave in polysilicon is 8.47×103m/s, and the experiment has reached the conclusion that the laser shock wave pressure peak exponentially distributes attenuation in the polysilicon.

A compact Mach-zehnder interferometer with a novel design of directional couplers and a phase shifter has been presented as a thermo-optical sensor. With the aim of reducing device size to micro and nano dimension silicon-on-insulator technology was employed. That allowed miniaturization of device size through the reduction of its cross sectional area to 0.066 µm² and the radius of curvature of both the arms of the directional coupler and S-bends of the phase shifter to 5 µm and C-bends to 3 µm. These nano size device dimensions made it possible to reduce the coupling gap to 0.2 µm, which resulted in a significant reduction in the coupling length. The device geometry and its performance characteristics were analyzed and optimized using coupled mode analysis and finite difference time domain simulation tools, respectively. The wavelength dependent transmission loss of the device was measured at different temperature to verify and validate its performance characteristics. Tested devices showed a remarkable temperature dependent transmission characteristic offering significant changes in transmission loss band – with as low as 0.45 ⁰C change in substrate temperature. The extinction ratio and the free spectral range of the device were 26 dB and 0.26 nm respectively in the wavelength range of 1549.5 nm – 1550.5 nm. These results imply that the devices presented here can be used as compact and highly sensitive thermal sensors and optical switches.

Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here we present an ultra-low-loss silicon waveguide on 500 nm thick SOI platform. Meter-scale delay lines, million-Q resonators and tens of picometer bandwidth grating filters are experimentally demonstrated. We design a low-loss low-reflection taper to seamlessly integrate the ultra-low-loss waveguide with standard heterogeneous Si/III-V integrated photonics platform to allow realization of high-performance photonic devices such as ultra-low-noise lasers and optical gyroscopes.

This computational research study will compare the specific charge capacity (SCC) between lithium ions inserted into crystallize silicon (c-Si) nanowires versus sodium ions inserted into amorphous silicon (a-Si) nanowires. It will be demonstrated that the potential energy V(r) within the lithium-silicon nanowire supports a coherent energy state model with discrete electron particles while the sodium-silicon nanowire potential energy will be discovered to be essentially zero and thus the electron current that travels through the sodiated silicon nanowire will be modeled as free electron with wave-like characteristics. This is due to the vast differences in the electric fields of the lithiated and sodiated silicon nanowires where the electric fields are of the order of 1e10 V/m and 1e-15 V/m respectively. The main reason for the great disparity in electric fields are due to the present of optical amplification within lithium ions and the absence of this process within sodium ions. It will be shown that optical amplification develops coherent optical interactions which is the primary reason for the surge of specific charge capacity in the lithiated silicon nanowire. Conversely, the lack of optical amplification is the reason for the incoherent optical interactions within sodium ions which is the reason for the low presence of SCC in sodiated silicon nanowires.

We present the results on photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm sized crystalline Si nanoparticles (NP) deposited on glass substrates. Finite difference time domain (FDTD) and finite element mesh (FEM) modeling of absorbed light intensity and photo-induced spatial temperature distribution across the Si NP films were well correlated with the local temperatures measured by micro-Raman spectroscopy and used for determination of heat conductivities in the films of various thicknesses. Cubic-to-hexagonal phase transition in these films caused by laser heating was found to be heavily influenced by the film thickness and heat conductive properties of glass substrate, on which the films were deposited. Heat conductivities across the drop-casted Si nanogranular films were found to be in the range of lowest heat conductivities of other types of nanostructurely voided Si films due to enhanced phonon scattering across inherently voided topology, weak NP-NP and NP-substrate interface bonding within nanogranular Si films.

The effects of soluble silicon fertilization on monocots and dicots have been widely studied. However, little is known regarding its effects on protecting epiphytes against insect and fungal pests. The efficacy of silicon fertilizer to reduce damage by thrip pest complexes, namely: Thrips palmi Karny, Frankliniella occidentalis Pergande, Chaetanaphothrips orchidii Moulton, and Chaetanaphothrips signipennis Bagnall (Thysanoptera: Thripidae), and fungal pathogens: Botrytis cinerea Persoon (Helotiales: Sclerotiniaceae) and Fusarium spp. Link (Hypocreales: Nectriaceae) was examined during a nine-month greenhouse trial in Hawaii. The trial assessed yield, quality, and pest damage across three common varieties of dendrobiums. All replicates received additional soluble silicon fertilizer applications alternating weekly between soil drench and foliar (50 mg Si/plant) applications. Yield, quality, and spray length, pest damage, plant vigor, SPAD, and leaf temperature were measured. Data were analyzed using a generalized linear model (glm) with repeated measures followed by post-hoc pair-wise comparisons in R, version 4.3.1. Treatment effects were significant at P

In the paper the experimental methodology for the single-crystal circular plate deformation measurement and subsequent procedure for mechanical properties quantitation are developed. The procedure is based on a new numerical-analytical solution of nonlinear boundary-value problem for finite deformations of a circular anisotropic plate. Using the developed method, a study of the deformation of single-crystal circular plates formed on the basis of a silicon-on-insulator structure was carried out. The values of residual stresses are determined and it is shown that the presence of these stresses increases the flexural rigidity of the plate in several times.

Silicon nanoparticles (SiNPs) are highly promising for biological and biomedical applications, including bioimaging, due to their unique opltical properties (i.e. strong fluorescence and very high photostability). Their low or negligible in vitro toxicity has been reported, but in vivo toxicity and biological effects of SiNPs are still uncertain. Uncoated SiNPs were dispersed in distilled water via sonication, and their rapid aggregation was observed (319.0 ± 2.4 nm particle size). In vivo toxicity was studied using Danio rerio embryos and larvae. Rapid aggregation in their incubation medium was observed; besides that, SiNPs at 25 mg/L or higher concentration induced swim bladder malformation and/or death of the fish. The estimated LC50 value for 7-day larvae was 180 mg/L. This is the first in vivo toxicity study of uncoated and unfunctionalized SiNPs. To achieve better stability in biological media and lower toxicity, SiNPs should be covered with hydrophilic layers, but their absorption by cellular membranes may be weaker in this case.

Semiconductors play a very important role in modern society. The improvement in performance of semiconductors is what has enabled the world to grow at such a fast pace. For decades scaling has been done through Moore’s law i.e performance improvements have been obtained due to transistor scaling where the number of transistors per unit area increase is what has contributed to the increase in performance. However, with transistor scaling reaching its limitations we need to find alternate methods to enhance silicon design to suit the computational need of modern society. To address this problem we will be looking into a few methods that enable performance scaling with a focus on analysing the most popular implementation of each in the industry.

Light trapping in single nanowires (NWs) are of vital importance for photovoltaic applications. However, circular NWs (CNWs) can limit its light-trapping ability due to high geometrical symmetry. In this work, we present a detailed study of light trapping in single NWs with an elliptical cross-section (ENWs). We demonstrate that the ENWs exhibit significantly enhanced light trapping compared with the CNWs, which can be ascribed to the symmetry-broken structure that can orthogonalize the direction of light illumination and the leaky mode resonances (LMRs). That is, the elliptical cross-section can simultaneously increase the light path length by increasing the vertical axis and reshape the LMR modes by decreasing the horizontal axis. We found that the light absorption can be engineered via tuning the horizontal and vertical axes, the photocurrent is significantly enhanced by 374.0% (150.3%, 74.1%) or 146.1% (61.0%, 35.3%) in comparison with that of the CNWs with the same diameter as the horizontal axis of 100 (200, 400) nm or the vertical axis of 1000 nm, respectively. This work advances our understanding of how to improve light trapping based on the symmetry breaking from the CNWs to ENWs and provides a rational way for designing high-efficiency single or self-assembled NW photovoltaic devices.

Thanks to advanced semiconductor microfabrication technology, chip-scale integration and miniaturization of lab-on-a-chip components, silicon-based optical biosensors have made significant progress for the purpose of point-of-care diagnosis. In this review, we provide an overview of the state-of-the-art in evanescent field biosensing technologies including interferometer, microcavity, photonic crystal, and Bragg grating waveguide-based sensors. Their sensing mechanisms and sensor performances, as well as real biomarkers for label-free detection, are exhibited and compared. We also review the development of chip-level integration for lab-on-a-chip photonic sensing platforms, which consist of the optical sensing device, flow delivery system, optical input and readout equipment. At last, some advanced system-level CMOS-chip packaging examples are presented, indicating the commercialization potential for the low cost, high yield, portable biosensing platform leveraging CMOS processes.

Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel arrays can serve as an efficient absorbing layers on account of their light trapping capabilities associated with the presence of high density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and underlying substrates. We show that the absorption in LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase). This, we suggest, imply that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate and mode hybridization.

A switchable and tunable terahertz (THz) metamaterial based on photosensitive silicon and Vanadium dioxide (VO2) was proposed. By using finite-difference time-domain (FDTD) method, the transmission and reflective properties of the metamaterial were investigated theoretically. The results imply that, the metamaterial can realize a dual electromagnetically induced transparency (EIT) or two narrow-band absorption depending on the temperature of the VO2. Additionally, the magnitude of the EIT and two narrow-band absorption can be tuned by varying the conductivity of photosensitive silicon (PSi) via pumping light. Correspondingly, the slow light effect accompanying the EIT can also be adjusted.

The evolution of photovoltaic cells is intrinsically linked to advancements in the materials from which they are fabricated. This review paper provides an in-depth analysis of the latest developments in silicon-based, organic, and perovskite solar cells, which are at the forefront of photovoltaic research. We scrutinize the unique characteristics, advantages, and limitations of each material class, emphasizing their contributions to efficiency, stability, and commercial viability. Silicon-based cells are explored for their enduring relevance and recent innovations in crystalline structures. Organic photovoltaic cells are examined for their flexibility and potential for low-cost production, while perovskites are highlighted for their remarkable efficiency gains and ease of fabrication. The paper also addresses the challenges of material stability, scalability, and environmental impact, offering a balanced perspective on the current state and future potential of these material technologies.

This research will examine the computational methods to calculate the nonlinear optical process of second harmonic generation (SHG) that will be hypothesized to be present during lithium ion insertion into silicon nanowires. First it will be determined whether the medium in which SHG is conveyed is non-centrosymmetric or whether the medium is inversion symmetric where SHG as a part of the second-order nonlinear optical phenomenon does not exist. It will be demonstrated that the main interaction that determines SHG is multiphoton absorption on lithium ions. The quantum harmonic oscillator (QHO) is used as the background that generates coherent states for electrons and photons that transverse the length of the silicon nanowire. The matrix elements of the Hamiltonian which represents the energy of the system will be used to calculate the probability density of second-order nonlinear optical interactions which includes collectively SHG, sum-frequency generation (SFG) and difference-frequency generation (DFG). As a result it will be seen that at varies concentrations of lithium ions (Li+) within the crystallized silicon (c-Si) matrix the second-order nonlinear optical process has probabilities substantial enough to create second harmonic generation that could possibly be used for such applications as second harmonic imaging microscopy.

The main consequence of radiation damage on a Silicon-Photomultiplier (SiPM) is a significant increase in the dark current. If the SiPM is not adequately cooled, the power dissipation causes it to heat up, which in turn affects its performance based on the temperature. In order to investigate this heating effect, experiments were carried out using a KETEK SiPM glued on an Al2O3 substrate, as well as HPK SiPMs that were either glued onto an Al2O3 substrate or a flexible PCB. The assemblies were connected either directly to a temperature-controlled chuck on a probe station or through layers of materials with well-defined thermal resistance. A DC-mode LED was used to illuminate the SiPM, and the resulting SiPM current was measured to determine the steady-state temperature. This temperature depended on the power dissipated in the multiplication region of the SiPM and the thermal resistance. This information can be utilized to adjust the SiPMs working point, taking into account the effects of self-heating. Similarly, this approach can be applied to packaged SiPMs that have an unknown thermal contact to a heat sink.

The tandem Solar cell has high power conversion efficiency (PCE), so they are taken as the next step in photovoltaic evolution. The tandem solar cell also overcome the limitations of Single-junction solar cells by reducing thermalization losses and also reduce the fabrication cost. The fabrication of tandem solar cells is highly efficient after the origination of halide perovskite absorber material, this material will shape the future of tandem solar cells. Researchers have already shown that this material can convert light more efficiently than standalone sub cell. Today, researchers around the world are keeping the configuration of a tandem solar cell as their agenda. A Tandem solar cell is a stacking of multiple layers having different bandgaps with specific maximum absorption and width. We reviewed perovskite/silicon tandem solar cells with different sub-module configurations. Move forward, we discuss the tandem module technology, sub cell of a tandem can be wired in several ways two terminals 2T monolithic and mechanically stacked, a four-terminal 4T mechanically stacked, and three-terminal 3T monolithic stack devices. This review paper provides a side-by-side comparison of theoretical efficiencies of multijunction solar cells. The highest efficiency has been evaluated at 39.4% for a three-level structure.

The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of high-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes are investigated. The main gas-phase and solid products of plasma-chemical transformations are determined. Thermodynamic analysis of SiCl4 + H2 and GeCl4 + H2 systems for optimal process parameters was carried out. Using the example of hydrogen reduction of SiCl4 by the method of numerical modeling, gas-dynamic and thermal processes for this type of discharge are investigated. The impurity composition of gas-phase and solid reaction products is investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, is shown.

Tamm Plasmon Polariton (TPP) is a nanophotonic phenomenon that has attracted much attention due to its spatial strong field confinement, ease of mode excitation and polarization independence. TPP has applications in sensing, storage, lasing, perfect absorber, solar cell, nonlinear optics, and many others. In this work, we demonstrate a biosensing platform based on TPP resonant mode. Both theoretical analyses based on Transfer Matrix Method and experimental validation through nonspecific detection of liquids of different refractive indices and specific detection of SARS-CoV-2 nucleocapsid protein (N-protein) are presented. Results show that TPP biosensor has high sensitivity and good specificity. For N-protein detection, the sensitivity is 1.5 nm/(µg/ml) and the limit of detection can reach down to below 7 ng/ml with spectrometer of 0.01 nm resolution of wavelength shift. This work paves the way for design, optimization, fabrication, characterization, and performance analysis of TPP based biosensors

Electro-optic modulator (EOM) is one of the key devices of high-speed optical fiber communication system and ultra-wideband microwave photonic system. Silicon-organic hybrid (SOH) integration platform combines the advantages of silicon photonics and organic materials, providing a high electro-optic effect and compact structure for photonic integrated devices. In this paper we present a SOH integrated EOM with comprehensive investigation of EOM structure design, silicon waveguide fabrication with Slot structure, on-chip poling of organic electro-optic material, and characterization of EO modulation response. The SOH integrated EOM is measured with 3dB-bandwidth of over 50 GHz and half-wave voltage length product of 0.26 V·cm. Furthermore, we demonstrate a microwave photonics phase shifter by using the fabricated SOH integrated dual parallel Mach-Zehnder modulator. The phase shift range of 410 degree is completed from 8 GHz to 26 GHz with a power consumption of less than 38 mW.

Silicon has been proved to be one of the most promising anode materials for the next generation of lithium-ion battery. For the application in batteries, Si anode should have high capacity and must be industrially scalable. In this study, we have designed and synthesised a hollow structure to meet these requirements. All the processes are carried out without special equipment. The Si nanoparticles that are commercially available are used as the core sealed inside TiO₂ shell, with rationally designed void space between the particles and shell. The Si@TiO₂ are characterised using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscope (SEM). The optimised hollow structured silicon nanoparticles, when used as anode in lithium-ion battery, exhibit a high reversible specific capacity over 600 mAhg-1. This excellent electrochemical property of the nanoparticles can be attributed to their optimised phase and unique hollow nanostructure.

We successfully created a composite photonic structure out of porous silicon (PSi) microcavities doped by the photochromic protein, photoactive yellow protein (PYP). Massive incorporation of the protein molecules into the pores was substantiated by a 30-nm shift of the resonance dip upon functionalization, and light-induced reflectance changes of the device due to the protein photocycle were recorded. Model calculations for the photonic properties of the device were consistent with earlier results on the nonlinear optical properties of the protein, whose degree of incorporation into the PSi structure was also estimated. The successful proof-of-concept results are discussed in light of possible practical applications in the future.

In this paper, we review devices used in silicon photonic switches. Devices in switches are divided into active and passive devices. Active devices consist of microring resonator, contra directional couplers, mach zhender switches. Passive devices consist of waveguide crossings and arrayed waveguide gratings. We also list the state of the art in devices in a comparison table.

In this study, Silicon Carbide (SiC) nano-particle based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range SiC printed thermistors. Initially, commercial silver ink was screen printed to fabricate inter-digitated electrodes (IDE’s) onto flexible Kapton® substrate via screen printing. Thermistor inks with different weight ratios of SiC nano- particles dispersed in polyimide resin matrix were fabricated. The SiC-polyimide temperature sensing inks were screen printed atop the IDE structures to form fully printed thermistors and encapsulated with a adhesive backed polyimide film for humidity inhibition. The high temperature tolerance of the Kapton® allowed the the sensors to be tested over a wide temperature range form 25◦C to 170◦C. The printed SiC thermistors exhibit excellent repeatability and stability over 15 hours of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a temperature coefficient of Resistance (TCR) of -0.556 %/◦C, a thermal coefficient of 502 K (β-index) and an activation energy of 0.08 eV which are comparable with printed thermistors previous reported. Further, the thermistor demonstrates an accuracy of ±1.35◦C which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10-90 %RH and a 4.2 % drift in baseline resistance after 100 cycles of aggressive bend testing at a 40°angle. The use of commercially available low cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance.

Keywords: Amorphous-precipitate, Nitride, Morphological stability, Diffusion, Internal stresses, Modelling, Simulation

The microstructure of the coating during hot-dip galvanizing under industrial conditions of two structural steels, a low-silicon ASTM A36 steel and a high-silicon Q345B steel, both of commercial quality, have been characterized for industrial-relevant times. For both cases it is noted that the formation of the Fe-Zn phases begins in early stages during the heating of the steel, a situation in which all the phases are in the solid state. The characterization was carried out through traditional metallographic techniques including SEM-EDS and DRX equipment. The evolution in time of the microstructure of both steels is examined, being able to observe that the mechanism by which silicon accelerates the formation of Fe-Zn phases in galvanizing is related to the change in the energy of the interfaces caused by a silicon accumulation in the liquid phase in contact with the ζ layer. These results provided us with a deeper understanding of the phase evolution in the hot-dip galvanizing of high silicon steels.

Silicon-based photodetectors, as low-cost and environmentally friendly optical sensors, are attractive. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi level pinning effect. The removal of Fermi level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17×10^8 cm Hz^1/2 W^-1 and 2.41×10^7 cm Hz^1/2 W^-1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms.

Silicon photonics is emerging as a competitive platform for electronic-photonic integrated circuits (EPICs) at the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. Here, we present a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2-µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier-collection path, thereby allowing for simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2-µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2-µm wavelength band. The results indicate that the performance of the GeSn WGPD has strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12×1010 cmHz½W-1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

In this paper, the preparation methods of porous silicon nitride materials with controllable dielectric constant and pore structure were systematically studied. By using microwave sintering technology, porous silicon nitride materials with high closed pore ratio were prepared by adjusting the content of sintering additives and sintering process parameters, and controlling the grain boundary phase and pore structure and size. The effects of sintering conditions on the total porosity, closed porosity, pore structure and dielectric properties of materials were systematically studied.

Cycling reliability is crucial for Si-based materials due to severe volume change during cycles that results in the fast capacity fading. Though the binder only occupies a very low amount of the total mass of anodes, it is proved to perform a key parameter to improve the cycle performance of Si-based anodes. Because they are eco-friendly and cost saving, water-based binders styrene-butadiene rubber (SBR) and carboxymethyl cellulose (CMC) are regarded as the better binder to substitute Poly (vinylidene difluoride) (PVDF) as the binder for Si-based anode. In this study, the anodes are fabricated by simply mixing the active materials (naso Si, graphite and conductive additive) together and using the mixture of SBR and CMC as a binder. The results showed that the retention capacities of the anodes are more than 440 mAh/g after 400 cycles. It indicates that it is an easy and simple way to make high performance anodes.

Effect of abrasive shape on the three-body abrasion behaviors of monocrystalline silicon was investigated by Molecular dynamics modelling. The axial ratio of abrasive particle was varied from 1.00, i.e., a complete sphere, to 0.40 to mimic abrasive shape. The particle’s movement turns toward sliding from rolling when the axial ratio becomes less than a critical value 0.46. In the abrasion process, the friction force and normal force showed an approximately sinusoid-like fluctuation for the rolling ellipsoidal particles, while the front cutting of particle caused that friction force increased and became larger than normal force for sliding particles. The phase transformation process was tracked under different particle’ movement patterns. The Si-II and Bct5 phase producing in loading process can partially transform to Si-III/Si-XII phase and backtrack to original crystal silicon under pressure release, which also occurred in the abrasion process. The secondary phase transformation showed difference for particles’ rolling and sliding movements after three-body abrasion. The rolling of particle induced the periodical and inhomogeneous deformation of substrates, while the sliding benefited producing high-quality surface in CMP process. This study aiming to construct more precise model to understand the wear mechanism benefits evaluating the MEMS wear and CMP process of crystal materials.

We experimentally demonstrate waveguide and microring resonator (MRR) polarizers by integrating 2D graphene oxide (GO) films onto silicon (Si) photonic devices. The 2D GO films with highly anisotropic light absorption are on-chip integrated with precise control over their thicknesses and sizes. Detailed measurements are performed for the fabricated devices with different GO film thicknesses, coating lengths, and Si waveguide widths. The results show that a maximum polarization-dependent loss (PDL) of ~17 dB is achieved for the hybrid waveguides, and the hybrid MRRs achieved a maximum polarization extinction ratio (PER) of ~10 dB. We also characterize the wavelength- and power-dependent response for these polarizers. The former demonstrates a broad operation bandwidth of over ~100 nm, and the latter verifies performance improvement enabled by photo-thermal changes in GO films. By fitting the experimental results with theoretical simulations, we find that the anisotropy in the loss of GO films dominates the polarization selectivity of these devices. These results highlight the strong potential of 2D GO films for realizing high-performance polarization selective devices in Si photonic platform.

With the ever-growing emphasis on global decarbonization and rapid increases in the power density of electronics equipment in recent years, new methods and lightweight materials have been developed to manage heat load as well as interfacial stresses associated with Coefficient of Thermal Expansion (CTE) mismatch between components. The Al-Si system provides an attractive combination of CTE performance and high thermal conductivity whilst being a very lightweight option. Such materials are of interest to industries where thermal management is a key design criterion, such as aerospace, automotive, consumer electronics, defense, EV and space. This paper will describe the development and manufacture of a family of high-performance hypereutectic Al-Si alloys (AyontEX™) by a powder metallurgy method. These alloys are of particular interest for structural heat sink applications that require high reliability under thermal cycling (CTE of 17μm/(m·°C)) as well as reflective optics and instrument assemblies that require good thermal and mechanical stability (CTE of 13μm/(m·°C)). Critical performance relationships are presented, coupled with the microstructure, physical and mechanical properties of these Al-Si alloys.

Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tubes signals would serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method are presented.

This article describes a novel electrochemical on-chip biosensor that utilizes anti-PSA antibody (Ab) and silver nanoparticles (AgNPs) to enhance the sensing and detection capability of prostate specific antigen (PSA) in the blood. The AgNPs are prepared, characterized, and applied onto a silicon photonic on-chip biosensing receptor platform designed to enhance the accurate detection of PSA. The AgNPs were synthesized by a chemical reduction method using silver nitrate (AgNO₃) as the precursor. Transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy dispersion X-ray spectroscopy (EDS), small angle X-ray scattering (SAXS), X-ray diffraction (XRD), and light microscopy were among the methods used in the characterization and analysis of the AgNPs. Each stage of the immunosensor fabrication was characterized using cyclic voltammetry. The proposed immunosensor was applied in the detection of PSA, a prostate cancer biomarker, with a high sensitivity and a limit of detection of 0.17 ng/mL over a linear concentration range of 2.5 to 11.0 ng/mL. The immunosensor displayed good stability and was selective in the presence of interfering species like immunoglobulin (Ig) in human serum, ascorbic acid (AA), and diclofenac (Dic). The detectivity and sensitivity are significantly higher than previous reports on similar or related technologies.

The work presented in this paper represents a preliminary study on the performance of the new Silicon tracker layer, the Layer 0 (L0), that will be installed on top of the Alpha Magnetic Spectrometer (AMS-02), at the end of 2024. AMS-02 is a cosmic rays (CR) detector that has been operating on the International Space Stations (ISS) since May 2011. Thanks to its 9-layer Silicon tracker, this apparatus can perform high energy CR measurements with an unprecedented level of statistics and precision. However, high Z (Z $\ge 15$) CR nuclei statistic is strongly affected by fragmentation along the detector: with the installation of the new Silicon layer will be possible to achieve new unique high energy (TeV region) measures for those nuclei along with increased statistics for all nuclei up to Zinc. To achieve this, a Silicon ladder prototype, that will be part of the final Silicon layer, has been exposed to an ions test beam at the super-proton-synchrotron (SPS) of the CERN to characterize its charge resolution and the readout electronics. Preliminary results have shown a charge resolution of 10 $\%$ for nuclei up to Z=7.

Light absorption in single nanowires (NWs) is one of the most crucial factors for photovoltaic applications. In this paper, we carried out a detailed investigation of light absorption in single rectangular NWs (RNWs). We show that the RNWs exhibit improved light absorption compared with the square NWs (SNWs), which can be attributed to the symmetry-breaking structure that can increase the light path length by increasing the vertical side and the enhanced leaky mode resonances (LMRs) by decreasing the horizontal side. We found that the light absorption in silicon RNWs can be enhanced by engineering the horizontal and vertical sides, the photocurrent is significantly increased by 276.5% or 82.9% compared with that of the SNWs with the same side length as the horizontal side of 100 nm or the vertical side of 1000 nm, respectively. This work provides an effective way for designing high-efficiency single NW photovoltaic devices based on the symmetry breaking from the SNWs to RNWs.

This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

A simple fabrication method in the surface modification of electroosmotic silicon microchannel using thermal dry oxidation is presented. The surface modification is done by coating the silicon surface with a silicon dioxide (SiO₂) layer using thermal oxidation process. The process is aimed not only to improve the surface quality of the channel to be suitable for electroosmotic fluid transport but also to reduce the channel width using a simple technique. Initially, the parallel microchannel array with dimensions of 0.5 mm length and width ranging from 1.8 µm to 2 µm are created using plasma etching on the 2x2 cm <100> silicon substrate. The oxidation of silicon channel in a thermal chamber is then conducted to create the SiO₂ layer. The layer properties and the quality of the surface are analyzed using SEM and surface profiler, respectively. The results show that the maximum oxidation growth rate occurs in the first 4 hours of oxidation time and the rate decreases by time as the oxide layer becomes thicker. It is also found that the surface roughness is reduced with the increase of process temperature and oxide thickness. The scallop effect on the vertical wall due to plasma etching process also improved with the presence of the oxide layer. After the oxidation, the channel width is reduced by ~40%. The demonstrated method is suggested for the fabrication of a uniform channel cross section with high aspect ratio in sub-micro and nanometer scale that will be useful for the electroosmotic flow (EOF) manipulation of the biomedical fluid sample.

The rapid development of the photovoltaic (PV) industry will result in an increase in the amount of electrical and electronic waste from used PV panels. Only in Poland, the total capacity installed in photovoltaic sources in Poland in May 2020 exceeded 1,950 MW, and the installation weight was approximately 120,000. tone. The problem arises in the recycling or management of this waste. This work presents methods used to recycle waste into photovoltaic modules. The authors investigated the possibility of mechanical and chemical processing of crystalline silicon. A method of thermal treatment of the panel was also proposed. As a result of the research, it was found that the stage of separating materials (crystalline cream, EVO foil, aluminum frame) plays an important role in the recycling process, which is not easy. Chemical treatment allows the silicon to become plastic and the temperature melts the back layer of the panel.

Water deficit is one of the factors that most influence plant growth and yield. Thus, this study aimed to evaluate the effect of silicon and salicylic acid application and water deficit on the growth and photosynthetic and osmoregulatory metabolism of Talisia esculenta Radlk seedlings and their recovery potential after the resumption of irrigation. Six treatments were performed: irrigation, irrigation suspension, irrigation suspension + silicon at 0.5 g L−1, irrigation suspension + silicon at 1.0 g L−1, irrigation suspension + salicylic acid at 50 mg L−1, and irrigation suspension + salicylic acid at 100 mg L−1. The evaluations were carried out at the beginning of the experiment (T0), at 10 and 15 (DIS) days after irrigation suspension, when the seedlings showed a photosynthetic rate close to zero, and at recovery (REC). The plants were submitted to water restriction for up to 15 days, being then re-irrigated until the recovery point, which was monitored based on the photosynthetic rate. Silicon application attenuated the harmful effects of water deficit on gas exchange, initial fluorescence, promoted proline accumulation in the leaf and root, and provided higher seedling quality. Salicylic acid application contributed to the maintenance of the relative water content of leaves during the water deficit period. Silicon and salicylic acid applications can attenuate the harmful effects of water stress, with silicon being the most effective agent in maintaining its growth and metabolism.

Silicon-based thin-films and nanostructures are of paramount importance in a wide range of applications, including microelectronics, photovoltaics, large area sensors, as well as biomedicine. The wide accessibility of silicon and its relatively low cost have driven a continuous improvement of the technology based on this element. Plasma technology has been widely used for the synthesis of coatings and nanostructures based on silicon. Moreover, it has given a fundamental contribution for continuously improving the control of the physicochemical properties of silicon-based materials, and for allowing the synthesis of nanometric structures with well-defined shape and morphology. In this work, we have reviewed the most interesting developments of plasma-assisted processed for the synthesis of Si-based materials, both inorganic and organic, in the last five years. A special attention has been given to the new techniques, or modifications of already existing ones, that open new possibilities for the synthesis of materials with new properties, as well as nanostructures with novel characteristics.

Solid state sensors having timing capabilities are becoming an absolute need in particle tracking techniques of future experiments at colliders. In this sense, silicon sensors having 3D structure are becoming an interesting solution, due to their intrinsic speed and radiation resistance. A characteristics of such devices is the strict dependence of their performance on their geometric structure, which can be widely optimised by design, thus requiring suitable tools for an accurate modeling of their behaviour. This paper illustrates the development, performance and use of the TCoDe simulator, specifically dedicated to the fast simulation of carrier transportation phenomena in solid state sensors. Some examples of its effectiveness in the design and analysis of 3D sensors is also given.

Field-effect transistor (FET)-based biosensors stand as powerful analytical tools for detecting trace-specific biomolecules in diverse sample matrices, especially in the realms of pandemics and infectious diseases. The primary concern in applying these biosensors is their stability, a factor directly impacting the accuracy and reliability of sensing over extended durations. The risk of biosensor degradation is substantial, potentially jeopardizing sensitivity and selectivity and leading to inaccurate readings, including the possibility of false positives or negatives. This paper delves into the documented degradation of silicon nanobelt FET (NBFET) biosensors induced by buffer solutions. The results highlight a positive correlation between immersion time and the threshold voltage of NBFET devices. Secondary ion mass spectrometry analysis demonstrates a gradual increase in sodium and potassium ion concentrations within the silicon as immersion days progress. This outcome is ascribed to the nanobelt's exposure to the buffer solution during the biosensing period, enabling ion penetration from the buffer into the silicon. The study emphasizes the critical need to address buffer solution-induced degradation to ensure the long-term stability and performance of FET-based biosensors in practical applications.

Bending waveguide is one of the building blocks of on-chip photonic integrated circuits (PICs). Previous bending waveguides (BWs) usually suffer from larger footprint size in the bending region, which is are not conducive to develop large-scale and high-density PICs. To this end, we propose and numerically investigate an ultra-compact silicon-on-insulator 180-degree waveguide bend with a bending radius of 2 µm. Being different from the previous BWs, the design is based on topologically optimized digital metamaterials, which is implemented by using intelligent genetic algorithms. Simulated results show that the proposed structure has a -1.36 dB bend efficiency per 180-degree at a wavelength of 1.55 µm and occupies a footprint of only 4 × 4 µm2. Moreover, the crosstalk is <−20 dB and the loss is <2.6 dB over a >100 nm operating bandwidth (1.6-1.7 µm) for TE0 modes. With the wide operating bandwidth and ultra-compact footprint, the proposed silicon-based 180-degree waveguide bend shows a potential application as the fundamental component for optical communication interconnect in the ultra-highly integrated photonic circuit.

The aim of the study was to find the effect of polyethylene (PE) coatings on the short-circuit current of silicon photovoltaic cells covered with glass, in order to improve the short-circuit current of the cells. Various combinations of PE films (thicknesses ranging from 9 to 23 µm, number of layers ranging from 2 to 6) with glasses (greenhouse, float, optiwhite and acrylic glass) were investigated. The best current gain of 4.05% was achieved for the coating combining a 1.5 mm-thick acrylic glass with 2 × 12 µm-thick PE films. This effect can be related to the formation of an array of micro-wrinkles and micrometer-sized air bubbles with a diameter of 50 to 600 µm in the films, which serve as micro-lenses and enhance light trapping.

The fabrication of thin-film multilayer structures by sputtering technique usually requires multi-cathode deposition machine. This study proposes a simpler approach based on the RF power modulation: silicon nitride (SiN$_x$) thin films were prepared by RF reactive sputtering in (Ar + N$_2$) atmosphere at room temperature. The samples were analyzed to highlight the effects of different deposition conditions on the morphological and optical properties of the films in the visible and near/mid-IR regions. The refractive index of the films was changed in the range of 1.5 - 2.5 (at $\lambda$=800 nm) by tuning the sputtering power. IR reflectance measurements revealed the absence of spurious (oxygen- or hydrogen-based) phases, while atomic force and scanning electron microscopies confirmed the presence of flat and defect-free samples surfaces.

Based on the sensitive sum frequency generation cross-correlation frequency-resolved optical gating (SFG-XFROG) measurement setup, besides the pulse broadening, blue shift, red shift and obvious pulse acceleration, we observed the soliton evolution when the low energy soliton pulse with wavelength of 1555nm transmit through the Si photonic crystal waveguide. The measurements were nicely matched with the simulation results, which are achieved with an optimized nonlinear Schrödinger equation (NLSE) modeling. The effects of various parameters of the silicon photonic crystal waveguides and the incident pulses on the pulse transmission were also analyzed, including the nonlinear effects and dispersion such as the self-phase modulation (SPM), self-steepening (SS) and intra-pulse Raman scattering(IRS). The results help us understand further the ultra-fast nonlinear dynamics of soliton in silicon-based waveguides, and even open a novel way for soliton-based functional elements in CMOS-compatible platforms.

This topical review describes the results of recent research into and development of silicon nitride, a ceramic material with unique properties. The outcome of this ongoing research strongly encourages the use of monolithic silicon nitride and coatings as contemporary and future biomaterial for a variety of medical applications. Crystallographic structure, synthesis and processing of monolithic structures and coatings, and examples of their medical applications are covered that relate to spinal, orthopedic and dental implants, bone grafts and scaffolds, platforms for intelligent synthetic neural circuits, antibacterial and antiviral particles and coatings, optical biosensors, and nano-photonic waveguides for sophisticated medical diagnostic devices. The examples provided show convincingly that silicon nitride is destined to become a leader to replace titanium and other entrenched biomaterials in many fields of medicine.

Silicone RTV-based engineering rubber composite products have been widely used for several applications in various fields as a major component such as structure, automotive, and medical. In its application, the rubber composite product is placed in an open area that is directly exposed to sunlight and rain. It has a significant negative impact on changes in chemical and rheological properties, making the product life of rubber composite products shorter. Therefore, in this study, changes in the chemical and rheological properties of both isotropic and anisotropic magnetorheological elastomer (MRE) treated with accelerated weathering were studied compared to untreated specimens with specimens that had been treated. MRE specimens with 40% by weight CIP were prepared with no current excitation and another sample were made under 1.5 T of magnetic flux density. Each specimen was treated in an accelerated weathering machine Q-Sun Xe-1 Xenon Test Chamber with a UV light exposure cycle for 102 minutes and 18 minutes of UV light combined with water spray for 24 hours followed by a condensation cycle of 4 hours in a dark period. Material characterization was carried out using FTIR and Rheometer to determine the changes in chemical and rheological properties. The morphological analysis results showed that the surface was rough and more cavities occurred after being given weather treatment. Rheometer test results showed a decrease in storage modulus in each MRE specimen that had been treated compared to untreated MRE specimens. Meanwhile, FTIR testing showed a change in wave peak between untreated and treated MRE specimens.

In-situ grown C_0.3N_0.7Ti and SiC, which derived from non-oxide additives Ti₃SiC₂, are proposed to densify silicon nitride (Si₃N₄) ceramics with enhanced mechanical performance. Remarkable increase of density from 79.20% to 95.48% could be achieved for Si₃N₄ ceramics with 5vol% Ti₃SiC₂. The capillarity of decomposed Si from Ti₃SiC₂, and in-situ reaction between nonstoichiometric TiC_x and Si₃N₄ were believed to be responsible for densification of Si₃N₄ ceramics. An obvious enhancement of flexural strength and fracture toughness for Ti₃SiC₂ doped Si₃N₄ ceramics was observed. The maximum flexural strength of 795 MPa for Si₃N₄ composites with 5vol% Ti₃SiC₂ and maximum fracture toughness of 6.97 MPa^.m^1/2 for Si₃N₄ composites with 20vol% Ti₃SiC₂ are achieved when mixed powders are hot-press sintered at 1700℃. Pull out of elongated Si₃N₄ grains, crack bridging, crack branching and crack deflection were demonstrated to dominate enhance fracture toughness of Si₃N₄ composites.

Recent developments in optical biosensors based on integrated photonic devices are reviewed with a special emphasis on silicon-on-insulator ring resonator. The review is mainly devoted to the following aspects: (1) Principles of sensing mechanism, (2) sensor design, (3) biofunctionalization procedures for specific molecule detection and (4) measurement set-ups and advances in chip-integration. The inherent challenges of implementing photonics-based biosensors to meet specific requirements of applications in medicine, food analysis, and environmental monitoring are discussed.

The article reviews the current status of label-free integrated optical sensors focusing on the evolution over the years of their analytical performance. At first a short introduction to the evanescent wave optics is provided followed by detailed description of the main categories of label-free optical sensors including sensors based on surface plasmon resonance (SPR), grating coupler, photonic crystals, ring resonators and interferometric transducers. After a short reference to SPR techniques, including localized SPR, integrated optical sensors i.e., grating-couplers, interferometers, photonic crystals, microring resonators are reviewed. For each type of sensor, the detection principle is first provided followed by description of the different transducer configurations so far developed and their performance as biosensors. Finally, a short discussion about the current limitations and future perspectives of integrated label-free biosensors optical sensors is provided

Neural microprobes represent an important component of neural prosthetic systems where implanted microprobes record the electro-potentials generated by specific thoughts in the brain and convey the signals to algorithms trained to interpret these thoughts. Here, we present novel elongated multi-site neural probe that can reach depths greater than 10mm. We hypothesize that reaching such depth allows the recording of cognitive signals required to drive cognitive prosthetics. The impedance of the recording sites on the probes was on the order of 500 kΩ at 1 kHz, which is consistent with probes used for neurophysiological recordings. The probes were made porous using Xenon Difluoride (XeF₂) dry etching to improve the biocompatibility and their adherence to the surrounding neural tissue. Numerical studies were performed to determine the reliability of the porous probes. We implanted the elongated probe in rats and show that the elongated probes are capable of simultaneously recording both spikes and local field potentials (LFPs) from various recording sites.

In this work, a highly efficient, molybdenum disulfide (MoS2) based near infrared (NIR) heterojunction photodetector is fabricated on a Si substrate using a cost-effective and simple drop casting method. A non-stoichiometric and inhomogeneous MoS2 layer with a S/Mo ratio of 2.02 is detected using energy dispersive X-ray spectroscopy and field emission scanning electron microscope analysis. Raman shifts are noticed at 382.42 cm-1 and 407.97 cm-1, validating MoS2 thin film growth with a direct bandgap of 2.01 eV. The fabricated n-MoS2/p-Si photodetector is illuminated with a 785 nm laser at different intensities, and demonstrate the ability of the photodetector to work in both regions, the forward biased and reverse biased from above 1.5 V and less than -1.0 V. The highest responsivity, R is calculated to be 0.52 A/W while the detectivity D* is 4.08 x 10^10 Jones for an incident light intensity of 9.57 mW/cm2. The minimum rise and fall times are calculated as 1.77 ms and 1.31 ms for an incident laser power of 9.57 mW/cm^2 and 6.99 mW/cm^2 respectively at a direct current bias voltage of 10 V. The demonstrated results are promising for the low-cost fabrication of a thin MoS2 film for photonics and optoelectronic device applications.

The NCO functional group of 3-isocyanatoproply triethoxysilane (IPTS) and the OH functional group of DOPO-BQ were used to conduct an addition reaction. Following completion of the reaction, triglycidyl isocyanurate (TGIC) was introduced to conduct a ring-opening reaction. Subsequently, a sol-gel method was used to take place a hydrolysis- condensation reaction on TGIC-IPTS-DOPO-BQ to form a hyperbranched nitrogen–phosphorous–silicon (HBNPSi) flame retardant. This flame retardant was incorporated into a polyurethane (PU) matrix to prepare a hybrid material. Fourier-transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), limiting oxygen index (LOI), UV-VIS spectrophotometry, and Raman analysis were conducted to structure characterization and analyzed transparency, thermal stability, flame retardancy, and residual char to understand the flame retardant mechanism of prepared hybrid materials. After the flame retardant was added, the maximum degradation rate decreased from −36 wt%/min to −17 wt%/min, the integral procedure decomposition temperature (IPDT) increased from 348 ℃ to 488 ℃, and the char yield increased from 0.7 to 8.1 wt%. The aforementioned results verified that thermal stability of PU can be improved after adding HBNPSi. The LOI analysis indicated that the pristine PU was flammable because the LOI of pristine PU was only 19. When the content of added HBNPSi was 40%, the LOI value was 26; thus the PU hybrid became nonflammable.

In this work, we designed a MEMS device which allows simultaneous direct measurement of mechanical properties during deformation under external stress and characterization of the evolution of microstructure of nanomaterials within a transmission electron microscope. This MEMS device makes it easy to establish the correlation between microstructure and mechanical properties of nanomaterials. The device uses piezoresistive sensors to qualitatively measure the force and displacement of nanomaterials, e.g., in wire and thin plate forms. The device has a theoretical displacement resolution of 0.19 nm and a force resolution of 2.1 μN. The device has a theoretical displacement range limit of 2.74 μm and a load range limit of 27.75 mN.

With continued scaling of semiconductor devices , the value of predictive analysis through 1 accurate quantum transport modeling is exponentially increasing. Quantum transmitting Boundary 2 method (QTBM) has been a well-known method of choice to model quantum transport in simple 1-D 3 devices. Here, we present an extension of the QTBM to the 2-D domain and apply it for more realistic 4 devices for accurate performance analysis.

On-chip integration of two-dimensional (2D) materials with unique structures and distinctive properties endow integrated devices with new functionalities and improved performance. With a high flexibility in modifying its properties and a strong compatibility with various integrated platforms, graphene oxide (GO) becomes an attractive 2D material for implementing functional hybrid integrated devices. Here, we demonstrate novel functionalities that go beyond the capabilities of conventional photonic integrated circuits, by harnessing the photo-thermal effects in 2D GO films integrated onto them. These include all-optical control and switching, optical power limiting, and non-reciprocal light transmission. The 2D layered GO films are on-chip integrated with precise control of their thicknesses and sizes. Benefitting from the broadband response of 2D GO films, all the three functionalities feature a very wide operational bandwidth. By fitting the experimental results with theory, we also extract the changes in material properties induced by the photo-thermal effects, which reveal interesting insights about 2D GO films. These results highlight the versatility of 2D GO films in implementing functional integrated photonic devices for a range of applications.

In recent years graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions opening the path to the realization of near-infrared silicon photodetectors based on the internal photoemission effect where graphene play the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

Anode bonding is a widely used method for fabricating devices with suspended structures, and this approach is often combined with deep reactive ion etching (DRIE) for releasing the device. However, the DRIE process with a glass substrate can potentially cause two critical issues: heat accumulation on the suspended surface and charging effects resulting from the reflection of charged particles from the glass substrate. In particular, for torsional bars with narrow width, the heat accumulated on the suspended surface may not dissipate efficiently, leading to photoresist burning and subsequently resulting in the fracture of the torsional bars. Moreover, once etching is finished through the silicon diaphragm, the glass surface becomes charged, and incoming ions are reflected towards the back of the silicon, resulting in the etching of the back surface. To address these issues, we proposed a method of growing silicon oxide on the back of the device layer. By designing, simulating, and fabricating electrostatic torsional micromirrors with common cavity silicon-on-glass (SOG) structures, we successfully validated the feasibility of this approach. This approach ensures effective heat dissipation on the suspended surface, even when the structure is over-etched for an extended period, and enables the complete etching of torsional bars without adverse effects due to the overheating problem. Additionally, the oxide layer can block ions from reaching the glass surface, thus avoiding the charging effect commonly observed in SOG structures during DRIE.

Heavy metals are non-biodegradable and have a high toxicity effect to living things which makes their presence in the environment extremely dangerous. The method of handling heavy metals waste by photocatalysis techniques using TiO2/SiO2 composite showed a good performance in reducing harmful pollutants. In this study, SiO2 from Bengkulu beach sand was used as a support material for TiO2 photocatalyst to reduce Cr(VI) and Pb(II) concentrations. SiO2 was obtained through leaching techniques using NaOH as a solvent. The TiO2/SiO2 composite photocatalyst were synthesized using a solvothermal method at 130 °C and then characterized using XRD, FTIR, SEM and PSA. Based on the XRD diffractogram, the synthesized TiO2 showed the anatase structure while the SiO2 showed the amorphous structure. Ti-O-Si bond is defined in the IR spectra, which indicates that the relationship between TiO2 and SiO2 is a chemical interaction. The results of SEM and PSA characterizations show agglomerated spherical (round) particles with a mean particle size of 616.9 nm. The TiO2/SiO2 composite of 7:1 ratio showed the highest photocatalytic activity after 180 minutes of UV irradiation, with a concentration-decrease percentage of 93.77% and 93.55% for for Cr(VI) and Pb(II), respectively.

Abstract: Metal-air batteries provide a most promising battery technology given their outstanding potential energy densities, which are desirable for both stationary and mobile applications in a ‘beyond lithium-ion’ battery market. Silicon- and iron-air batteries underwent less research and development compared to lithium- and zinc-air batteries. Nevertheless, in the recent past, the two also-ran battery systems made considerable progress and attracted rising research interest due to the excellent resource-efficiency of silicon and iron. Silicon and iron are among the top five of the most abundant elements in the earth’s crust, which ensures almost infinite material supply of the anode materials, even for large scale applications. Furthermore, primary silicon-air batteries are set to provide one of the highest energy densities among all batteries, while iron-air batteries are frequently considered as a highly rechargeable system with decent performance characteristics. Considering fundamental aspects for the anode materials, i.e., the metal electrodes, in this review, we will first outline the challenges, which explicitly apply to silicon- and iron-air batteries and prevented them from a broad implementation so far. Afterwards, we provide an extensive literature survey regarding state-of-the-art experimental approaches, which are set to resolve the aforementioned challenges and might enable the introduction of silicon- and iron-air batteries into the battery market in the future.

This computational research study analyzes the increase of the specific charge capacity that comes with the reduction of the anisotropic volume expansion during lithium ion insertion within silicon nanowires. This research paper is a continuation from previous work that studied the expansion rate and volume increase. It has been determined that when the lithium ion concentration is decreased by regulating the amount of Li ion flux, the lithium ions to silicon atoms ratio, represented by x, decreases within the amorphous lithiated silicon (a-LixSi) material. This results in a decrease in the volumetric strain of the lithiated silicon nanowire as well as a reduction in Maxwell stress that was calculated and Young’s elastic module that was measured experimentally using nanoindentation. The conclusion as will be seen is that as there is a decrease in lithium ion concentration there is a corresponding decrease in anisotropic volume and a resulting increase in specific charge capacity. In fact the amplification of the electromagnetic field due to the electron flux that created detrimental effects for a fully lithiated silicon nanowire at x = 3.75 which resulted in over a 300% volume expansion becomes beneficial with the decrease in lithium ion flux as x approaches 0.75 which leads to a marginal volume increase of ~25 percent. This could lead to the use of crystalline silicon, c-Si, as an anode material that has been demonstrated in many previous research work to be ten times greater charge capacity than carbon base anode material for lithium ion batteries.

Abstract: This computational research study analyzes the increase of the specific charge capacity that comes with the reduction of the anisotropic volume expansion during lithium ion insertion within silicon nanowires. This research paper is a continuation from previous work that studied the expansion rate and volume increase. It has been determined that when the lithium ion concentration is decreased by regulating the amount of Li ion flux, the lithium ions to silicon atoms ratio, represented x, decreases within the amorphous lithiated silicon (a-LixSi) material. This results in a decrease in the volumetric strain of the lithiated silicon nanowire as well as a reduction in Maxwell stress that was calculated and Young’s elastic module that was measured experimentally using nanoindentation. The conclusion as will be seen is that as there is a decrease in lithium ion concentration there is a corresponding decrease in anisotropic volume and a resulting increase in specific charge capacity. In fact the amplification of the electromagnetic field due to the electron flux that created detrimental effects for a fully lithiated silicon nanowire at x=3.75 which resulted in over a 300% volume expansion becomes beneficial with the decrease in lithium ion flux as x approaches 0.75 which leads to a marginal volume increase of ~25 percent. This could lead to the use of crystalline silicon, c-Si, as an anode material that has been demonstrated in many previous research work to be ten times greater charge capacity than carbon base anode material for lithium ion batteries.

The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary, the Raman data coming from within a few micrometers of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometers. For example, Raman data provides an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimeter length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometers of the bevel edge of 200mm diameter wafers.

The application of graph theory in chemical and molecular structure research far exceeds people's expectations, and it has recently grown exponentially. In the molecular graph, atoms are represented by vertices and bonded by edges. In this report, we study the silicon-carbon Si₂C₃-I[p,q] and Si₂C₃-II[p,q]. We compute several Zagreb polynomials and Redefined Zagreb indices of these silicon-carbons.

The possibility of using Si-based anodes in lithium-ion batteries is actively investigated due to the increased lithium capacity of silicon. The paper reports the preparation of submicron silicon fibers on glassy carbon in the KI–KF–KCl–K2SiF6 melt at 720°C. For this purpose, the parameters of silicon electrodeposition in the form of fibers were determined by cyclic voltammetry, and ex-perimental samples of ordered silicon fibers with an average diameter from 0.1 to 0.3 μm were obtained under galvanostatic electrolysis conditions. Using the obtained silicon fibers, anode half-cells of lithium-ion battery was fabricated, and its electrochemical performance under mul-tiple lithiation and delithiation was studied. By means of voltametric studies, it is observed that charging and discharging of the anode based on the obtained silicon fibers occurs at potentials from 0.2 to 0.05 V and from 0.2 to 0.5 V, respectively. A change in discharge capacity from 520 to 200 mAh g-1 during the first 50 charge/discharge cycles at a charge current of 0.1C and a Coulomb ef-ficiency of 98-100% was shown. The possibility of charging silicon-based anode samples at charging currents up to 2C was also noted; the discharge capacity ranged from 25 to 250 mAh g-1.

The Reactive Spark Plasma Sintering (R-SPS) method is compared in this work with the two-steps SHS-SPS route, based on combination of the Self-propagating High-temperature Synthesis (SHS) with the SPS process, for the fabrication of dense (Hf0.2Mo0.2Ti0.2Ta0.2Nb0.2)B2-SiC and (Hf0.2Mo0.2Ti0.2Ta0.2Zr0.2)B2-SiC ceramics. A multiphasic and inhomogeneous product, containing various borides, is obtained at 2000°C/20min by R-SPS, from transition metals, B4C and Si. In contrast, if the same precursors are first reacted by SHS, and then processed by SPS under the optimized condition of 1800°C/20min, the desired ceramics are successfully attained. Both High-Entropy-Boride/SiC products display densities > 97%, uniform microstructures and contained only small amounts of residual oxides (<2.4 wt.%). The presence of SiC makes the sintering temperature milder, i.e. 150°C below to that needed by the corresponding additive-free system. Fracture toughness is also markedly improved, particularly when considering the Nb-containing system processed at 1800°C/20min, whereas KIC progressively decreases (from 7.35 to 5.36 MPa m1/2) as the SPS conditions become more severe. SiC addition is found to inhibit the volatilization of metal oxides like MoO3 formed during oxidation experiments, thus avoiding mass loss in the ceramics. The benefits above also likely take advantage of the fact that the two composite constituents are synthesized in parallel, according to the SHS-SPS approach, rather than being produced separately and combined subsequently, so that strong interfaces between them are formed.

Electrochemical deposition of silicon at room temperature is problematic due to intrinsically low conductivity of the deposits. This study reports the photoelectrochemical (PEC) deposition of silicon (Si) and silicon–carbon (Si–C) layers from an ionic liquid at temperature 40 oC using silicon tetrachloride (SiCl4) as a silicon precursor. Amorphous layers are deposited on p-type silicon (p-Si), p-type gallium arsenide (p-GaAs), and aluminum–copper alloy AA2024. The semi-conductor substrates are activated by white LED illumination, which generated photoelectrons, thereby making the substrate conductive with respect to the cathodic reaction. Photoresponsive-ness of the deposits is proven by the light-induced photocurrents on an optically inactive substrate made of the alloy AA 2024. The proposed method paves the way for the electrochemical modifica-tion of semiconductors and metals with Si and Si–C structures, which are applicable in various fields, such as; batteries, anti-corrosion coatings, photovoltaics, or PEC electrodes for hydrogen production.

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapour deposition (PECVD) of SiH4 (Silane) mixed with Hydrogen. The resulting material shows outstanding radiation resistance properties and can be deposited on a wide variety of different substrates. These devices have been used to detect many different kinds of radiation namely: MIPs, x-rays, neutrons and ions as well as low energy protons and alphas. However, MIP detection using planar diodes has always been difficult due to the unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance and a limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations the 3D-SiAm collaboration proposes to use a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while conserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts will be illustrated.

The effects of the additives (silicon carbide and titania) and sintering temperatures on the phases developed, physical and mechanical properties of sintered mullite-carbon ceramic composite produced from kaolin and graphite was investigated. The kaolin and graphite of known mineralogical composition were thoroughly blended with 5 and 3 (vol.) % silicon carbide and titania respectively. From the homogeneous mixture of kaolin, graphite and titania, standard samples were prepared via uniaxial compaction. The test samples produced were subjected to firing (sintering) at 1300˚C, 1400˚C and 1500˚C. The sintered samples were characterized for the developed phases using x‐ray diffractometry analysis, microstructural morphology using ultra‐high resolution field emission scanning electron microscope (UHRFEGSEM). Various physical and mechanical properties were determined. It was observed that the addition of SiC/TiO2 additives to the samples made them to possess very low oxidation indices .This also resulted in improvement in the bulk densities and cold crushing strength of the sample when compared with those without additives. It was concluded that the addition of SiC/TiO2 additives improves on the high temperature oxidation resistance of the mullite-carbon ceramic composite sample.

The microstructure of the substrate plays a crucial role in the anodizing process. Anodizing cast aluminum alloys is quite challenging due to the higher levels of alloying elements present compared to pure aluminum. Elements such as silicon, iron, and copper significantly impact the growth and quality of the anodic layer. Additionally, anodizing parameters such as electrolyte composition, current density, and temperature are critical in determining the morphology and thickness of the anodic film. The casting process, surface condition, and post-treatment also affect the properties of the anodic layer. Optimizing these parameters is essential to achieve a durable and high-quality anodic layer. This work aims to provide a comprehensive understanding of the various factors affecting the anodizing of cast aluminum alloys and the properties of the anodic layer, including its thickness, corrosion resistance, and wear resistance.

Optical parametric amplification (OPA) represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media, for generating high-power optical pulses, optical microcombs, entangled photon pairs and a wide range of other applications. Here, we demonstrate optical parametric amplifiers based on silicon nitride (Si₃N₄) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. We achieve precise control over the thickness, length, and position of the GO films using a transfer-free, layer-by-layer coating method combined with accurate window opening in the chip cladding using photolithography. Detailed OPA measurements with a pulsed pump for the fabricated devices with different GO film thicknesses and lengths show a maximum parametric gain of ~24.0 dB, representing a ~12.2 dB improvement relative to the device without GO. We perform a theoretical analysis of the device performance, achieving good agreement with experiment and showing that there is substantial room for further improvement. This work demonstrates a new way of achieving high photonic integrated OPA performance by incorporating 2D materials.

: The paper presents the results of uniaxial tensile tests of samples of hypoeutectic aluminum-silicon alloy A319. According to the results of which the influence of surface treatment by a pulsed electron beam on the mechanical properties of the material was determined. The peculiarities of localization of deformation in the material, caused by grinding of the surface layer material structure due to rapid crystallization during electron beam treatment were revealed. The surface treatment up to 100 µm depth leads to the formation of a fine dendritic columnar structure of silumin and to an increase in the plasticity of the samples. The influence of surface treatment affects the increase of deformation localization in the region of stable concentrator before failure. The largest increase in ductility and localization of deformation occurs during processing with energy density of 15 J/cm2. In the process of specimen deformation, unstable, metastable, and stable areas of plastic deformation localization are formed and replaced, and the formation of stable areas of localized plastic deformation, in which the specimen fails at the end of the test, can be detected at the initial stages of testing. In specimens, during testing in the zone of localized plastic deformation, bands are formed that pass through the entire surface of the specimen at an angle from 35 to 55 degrees to the axis of tension, their evolution leads to the formation of stable zones of localized plastic deformation and to the failure of the specimen.

Protein tyrosine sulfation (PTS), a vital post-translational modification, facilitates protein–protein interactions and regulates many physiological and pathological responses. Monitoring PTS has been difficult owing to the instability of sulfated proteins and the lack of a suitable method for detecting the protein sulfate ester. In this study, we combined an in situ PTS system with an ultra-high-sensitivity polysilicon nanowire field-effect transistor (pSNWFET)-based sensor to directly monitor PTS formation. A peptide containing the tyrosine sulfation site of P-selectin glycoprotein ligand (PSGL)-1 was immobilized onto the surface of the pSNWFET by using 3-aminopropyltriethoxysilane and glutaraldehyde as linker molecules. A coupled enzyme sulfation system consisting of tyrosylprotein sulfotransferase and phenol sulfotransferase was used to catalyze PTS of the immobilized PSGL-1 peptide. Enzyme-catalyzed sulfation of the immobilized peptide was readily observed through the shift of the drain current–gate voltage curves of the pSNWFET before and after PTS. To the best of our knowledge, this is the first study to describe in situ PTS and its direct observation by using semiconductor devices. We expect that this approach can be developed as a next generation biochip for biomedical research and industries.

Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered as a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on utilization of near-IR radiation for laser-induced crystallization of α-Si providing no information regarding optical properties of the resultant polycrystalline Si films. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-driven crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.

We theoretically investigate and optimize four-wave mixing (FWM) in silicon nitride (SiN) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. Based on extensive previous measurements of the material parameters of the GO films, we perform detailed analysis for the influence of device parameters including waveguide geometry, GO film thickness, length, and coating position on the FWM conversion efficiency (CE) and conversion bandwidth (CB). The influence of dispersion and photo-thermal changes in the GO films is also discussed. Owing to the strong mode overlap between the SiN waveguides and the highly nonlinear GO films, FWM in the hybrid waveguides can be significantly enhanced. We obtain good agreement with previous experimental results and show that by optimizing the device parameters to balance the trade-off between Kerr nonlinearity and loss, the FWM CE can be improved by as much as ~20.7 dB and the FWM CB can be increased by ~4.4 folds, relative to the uncoated waveguides. These results highlight the significantly enhanced FWM performance that can be achieved in SiN waveguides by integrating 2D layered GO films.

Layered 2D graphene oxide (GO) films are integrated with silicon nitride (SiN) waveguides to experimentally demonstrate an enhanced Kerr nonlinearity via four-wave mixing (FWM). Owing to the strong light–matter interaction between the SiN waveguides and the highly nonlinear GO films, the FWM performance of the hybrid waveguides is significantly improved. SiN waveguides with both uniformly coated and patterned GO films are fabricated based on a transfer-free, layer-by-layer GO coating method together with standard photolithography and lift-off processes, yielding precise control of the film thickness, placement and coating length. Detailed FWM measurements are carried out for the fabricated devices with different numbers of GO layers and at different pump powers. By optimizing the trade-off between the nonlinearity and loss, we obtain a significant improvement in the FWM conversion efficiency of ≈7.3 dB for a uniformly coated device with 1 layer of GO and ≈9.1 dB for a patterned device with 5 layers of GO. We also obtain a significant increase in FWM bandwidth for the patterned devices. A detailed analysis of the influence of pattern length and position on the FWM performance is performed. Based on the FWM measurements, the dependence of GO’s third-order nonlinearity on layer number and pump power is also extracted, revealing interesting physical insights about the 2D layered GO films. Finally, we obtain an enhancement in the effective nonlinear parameter of the hybrid waveguides by over a factor of 100. These results verify the enhanced nonlinear optical performance of SiN waveguides achievable by incorporating 2D layered GO films.

Silicon-based photoelectrochemical (PEC) conversion system has recently gained attention with its ability to provide cost-efficient and superior photoresponsive behavior in regard to other various semiconductor photoelectrodes. Carbon-based co-catalysts have always shared the spotlight for being rendered as alternative metal-free electrocatalysts intended for hydrogen evolution reaction (HER). In particular, a representative carbon-derived material, reduced Graphene Oxide (rGO) has attracted much attention as a non-metal catalyst for efficient and durable HER. Herein, we have deposited rGO on silicon nanowire (SiNW) structure which shows the highest reduction in the overpotential for HER up to date. This could be attributed to the synergistic effects of rGO and SiNW with unique anisotropic morphology, facile tuning capabilities, and scalable fabrication methods. Combined with nanostructured photocathode, rGO deposited SiNW showed better applied bias photon to current conversion efficiency of 3.16%, which is 158 times higher than that of bare planar Si system. In regard to this development we believe that rGO-SiNW photoelectrodes would pave the way for state-of-the-art highly efficient non-metal catalysts for energy conversion technologies.

Blood testing is a crucial application in the field of clinical studies for disease diagnosis and screening, biomarkers discovery, organ function assessment, and personalized medication. Therefore, it is of utmost importance to collect precise data in a short time. In this study, we utilized Raman spectroscopy to analyze blood samples and extracted comprehensive biological information, including the primary components and compositions present in the blood. We conducted short-wavelength (532 nm green light) Raman scattering spectroscopy on blood samples, plasma, and serum, and subsequently analyzed the biological characteristics detected in each sample type. Our results indicated that whole blood had high hemoglobin content, which suggests that hemoglobin is a major component of blood. The characteristic Raman peaks of hemoglobin were observed at 690, 989, 1015, 1182, 1233, 1315, and 1562–1649 cm−1. Analysis of plasma and serum samples indicated the presence of β-carotene, which exhibited characteristic peaks at 1013, 1172, and 1526 cm−1. Additionally, in the field of medical blood testing, the novel 3D Silicon micro-channel device technology holds immense potential. It can serve as a substrate and helps to detect various diseases and biomarkers, providing real-time data to help medical professionals and patients better understand their health conditions. Changes in biological data collected in this manner could potentially be used to diagnose clinical diseases.

Helicobacter Pylori (H. Pylori) is a common pathogen with high prevalence of infection in human populations. Diagnosis of H. Pylori infection is critical for its treatment, eradication, and prognosis. Biosensors have been demonstrated to be powerful for rapid onsite detection of pathogens, particularly for point-of-care test (POCT) scenarios. In this work, we propose a novel optical biosensor, based on nanomaterial porous silicon (PSi) and photonic surface state Tamm Plasmon Polariton (TPP), for detection of cytotoxin-associated antigen A (CagA) antigen of H. Pylori bacterium. We fabricated the PSi TPP biosensor, analysed its optical characteristics and demonstrated through experiments towards sensing of CagA antigen, that TPP biosensor has sensitivity of 100 pm/(ng/ml), limit of detection of 0.01 ng/ml, and specificity in terms of positive-to-negative ratio of more than six. From these performance factors, it can be concluded that TPP biosensor can serve as an effective tool for diagnosis of H. Pylori infection, either in analytical labs or in POCT applications.

The main objective was to analyze the influence of silicon content on high-temperature oxidation of low-alloy steels. Samples of AISI 1045, AISI 5160, and AISI 9254 steels, with different silicon contents, were oxidized at an isothermal temperature of 1000°C for times of 20 minutes, 40 minutes, and 60 minutes. The oxide layers formed mainly contain hematite, magnetite wustite, and fayalite. The average thickness of the oxide layer can decrease with an increase in silicon content below 1% but can increase for contents greater than 1% due to the difference in density between fayalite and iron oxides. Silicon tends to accumulate on the surface of steel and form a SiO2 film in the early stages of oxidation, which can control the oxidation process. The eutectic compound FeO+Fe2SiO4 forms at the oxide-steel interface, and its thickness increases with oxidation time and the silicon content present. The SiO2 film tends to decrease with oxidation time and silicon content.

Silicon anodes have been considered one of the most promising anode candidates for the next generation of high-energy density lithium-ion batteries due to the high theoretical specific capacity (4200 mAh g-1) of Si. However, high lithiation capacity endows silicon anodes with severe volume expansion effects during the charge/discharge cycling. The repeated volume expansions not only lead to the pulverization of silicon particles and the separation of electrode materials from the current collector, but also brings rupture/formation of solid electrolyte interface (SEI) and also continuous electrolyte consumption, which seriously hinders the commercial application of silicon anodes. Structural design and optimization is the key to improving the electrochemical performances of silicon anodes, which has attracted wide attention and research in recent years. This paper mainly summarizes and compares the latest research progress for the structural design and optimization of silicon anodes.

Silicon is an essential trace nutrient for plant growth and is frequently employed to remediate soils contaminated with heavy metals in agriculture. However, silicon’s role and mechanism in reducing heavy metal toxicity have not been well understood, especially for multi-heavy metals. In this study, the effects of silicon-rich materials (silicate, rice husk biochar (RHB), and bentonite) on growth trait, antioxidant response, and heavy metal accumulation and distribution of wheat grown in two soils polluted by multiple heavy metals (Cd, Zn, Pb, and As) were investigated. The results revealed that the addition of silicon-rich materials enhanced plant growth, improved the photosynthetic attributes in leaf tissues, and decreased the contents of Cd, Zn, Pb, and As in wheat shoots and grains. The examination of the subcellular distribution of heavy metals in plants implied that silicon-rich materials transferred heavy metals as intracellular soluble fractions to the cell walls, indicating the reduction of mobility and toxicity of heavy metals in the plants. In addition, the application of the silicon-rich materials reduced oxidative damage in plants by downregulating plant antioxidant response systems and decreasing the production of malondialdehyde (MDA), ascorbic acid (AsA), and glutathione (GSH). Moreover, fractionation analysis of soil heavy metals showed that silicon-rich amendments could convert bioavailable heavy metals into immobilized forms. The results indicated that silicon-rich materials could remediate multi-heavy metal-polluted soils and promote wheat production.

With the decline in fossil fuels, hydrogen-based alternatives provide a reliable and clean source for sustainable energy generation. In these endeavors, photochemical splitting for hydrogen production through tandem cells has been the source of much theoretical and experimental research in science. Much focus has been placed on interfacial band gap engineering as one of the most promising routes in the generation of hydrogen.This present work explores sputtering of n-silicon to form the active electrode in a n-Si | n-TiO₂ tandem cell and investigates the effect of variations in sputtering and post sputtering treatment parameters (rapid thermal annealing and long cycle annealing) for successful deposition of crystalline Silicon. The samples were successfully characterized via Raman Spectroscopy, X-ray Diffraction and Optical Transmission Spectroscopy to ascertain prevalent crystalline order and optical band gap, under different sputtering and post-sputtering conditions. Relevant conclusions were drawn to ascertain the best possible deposition parameters of n-Si for photocatalytic water splitting.

Abstract: Composite sintered bodies comprising silicon dioxide (SiO2) nanoparticles dispersed in β-tricalcium phosphate (β-TCP) were prepared. The addition of nano-sized colloidal SiO2 to the β-TCP produced well-dispersed secondary phase nanoparticles that promoted densification by suppressing grain growth and increasing volume shrinkage of the sintered bodies. The SiO2 was found not to react with the β-TCP at 1120 °C and the substitution of silicon for phosphorous to produce a solid solution did not occur. This lack of a reaction is ascribed to the absence of avail-able calcium ions to compensate for the increase in charge associated with this substitution. The SiO2 nanoparticles were found to be present near the intersections of grain boundaries in the β-TCP. A β-TCP composite sintered body containing 4.0 wt% SiO2 exhibited a bending strength comparable to that of cortical bone and hence could potentially be used as a bone filling material.

To reduce environmental impacts from sodium silicate synthesis it was suggested the use of sugarcane bagasse ash (SCBA) as a source of silicon dioxide and sodium carbonate using the ceramic method. Although the production of sodium silicate is carried out on a large scale, it should be noted that its process requires temperatures above 1000 °C or the use of highly corrosive agents such as sodium hydroxide and chlorine gas used to neutralize the remaining sodium hydroxide. In the present work, the synthesis temperatures were reduced to 800 °C with a reaction time of 3 hours by pressing equimolar mixtures of previously purified SCBA and sodium carbonate, then heat treatment was carried out under the indicated conditions. The resulting materials were analyzed by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD). Among the crystalline phases, calcium disodium silicate was identified, in addition to sodium silicate, so it was inferred that the other components of the ash can interfere with the synthesis of silicate. Therefore, to obtain the highest composition of sodium silicate, a leaching treatment of the SCBA is required.

Developing new technologies is essential for advancement in solar cell technologies due to their ability to only absorb light mainly in the visible light spectrum. Super crystals Nd³⁺- Eu³⁺ optical characteristics display higher absorption of light waves than single crystals of Eu³⁺ and Nd³⁺ due to a two-photon absorption energy transfer mechanism known as upconversion. Super crystals Nd³⁺- Eu³⁺ display higher absorption due to fewer light waves being transmitted through materials as reported in spectra data. Transmission spectra data reflects that Nd³⁺- Eu³⁺ nanoparticles are great candidates to enhance light absorption in solar cell devices.

A distributed bragg reflector is designed to get an optical reflectance on visible electromagnetic spectrum i.e. ~800 nm in this work. Device is realized based on Abele’s matrix for TE mode.

Nanoprecipitation by liquid anti-solvent precipitation is one of the most versatile methods to produce pure drug nanoparticles (PDNPs) owing to the ability to optimize the properties of the product. Nevertheless, nanoprecipitation shows broad particle size distribution and low physical stability, leading to high batch-to-batch variability and challenging the bench-to-bedside translation. Microfluidics has emerged as a powerful tool to produce PDNPs in a simple, reproducible, and cost-effective manner with excellent control over NP size. In this work, we designed and fabricated T- and Y-shaped Si-made microfluidics device and used it to produce pure NPs of three kinase inhibitors of different lipophilicity and water-solubility, namely imatinib, dasatinib and tofacitinib, without the use of colloidal stabilizers. PDNPs display sizes in the 90-350 nm range (dynamic light scattering) and a rounded shape (high-resolution scanning electron microscopy). Analysis by X-rays diffraction and differential scanning calorimetry confirmed that this method results in highly amorphous NPs. In addition, we show that the flow rate of solvent, the anti-solvent, and the channel geometry of the device play a key role in the size of the generated NPs.

The Kerr nonlinear optical performance of silicon nanowire waveguides integrated with 2D layered graphene oxide (GO) films is theoretically studied and optimized based on experimentally measured linear and nonlinear optical parameters of the GO films. The strong mode overlap between the silicon nanowires and highly nonlinear GO films yields a significantly enhanced Kerr nonlinearity for the hybrid waveguides. A detailed analysis for the influence of waveguide geometry and GO film thickness on the propagation loss, nonlinear parameter, and nonlinear figure of merit (FOM) is performed. The results show that the effective nonlinear parameter and nonlinear FOM can be increased by up to ≈52 and ≈79 times relative to bare silicon nanowires, respectively. Self-phase modulation (SPM)-induced spectral broadening of optical pulses is used as a benchmark to evaluate the nonlinear performance, examining the trade-off between enhancing Kerr nonlinearity and minimizing loss. By optimizing the device parameters to balance this, a high spectral broadening factor of 27.6 can be achieved ‒ more than 6 times that achieved in previous experiments. Finally, the influence of pulse chirp, material anisotropy, and the interplay between saturable absorption and SPM is also discussed. These results provide useful guidance for optimizing the Kerr nonlinear optical performance of silicon waveguides integrated with 2D layered GO films.

Layered two-dimensional (2D) GO films are integrated with silicon-on-insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through self-phase modulation (SPM). The GO films are integrated with SOI nanowires using a large-area, transfer-free, layer-by-layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2-mm-long films of 1−3 layers of GO, and 0.4-mm-long films with 5−20 layers of GO. By fitting the experimental results with theory, the dependence of GO’s n₂ on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk-like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 fold, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to FOM > 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.