Silver plays a prominent role as an active material in resistive-switching memory devices (memristors) based on electrochemical metallization. Such a structure contains in its active volume nanoscale Ag filaments, which can be used as artificial synapses in neural-network applications. Meanwhile, a fundamentally different type of resistive switching occurs in an atomic wire of pure Ag, where an embedding, ion-hosting environment is absent. This comparative study clarifies the characteristics and origins of the latter, purely atomic switching phenomenon, highlighting its importance in silver-based memristive devices as the active volume approaches truly atomic dimensions.